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    onsemi BAS29

    DIODE GP 120V 200MA SOT23-3
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    DigiKey BAS29 Cut Tape 7,500 1
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    BAS29 Digi-Reel 7,500 1
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    BAS29 Reel 6,000 3,000
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    Mouser Electronics BAS29 11,350
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    Verical BAS29 27,000 11,812
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    Arrow Electronics BAS29 27,000 10 Weeks 3,000
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    Newark BAS29 Cut Tape 10,227 5
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    Future Electronics BAS29 Reel 17 Weeks 24,000
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    Rochester Electronics BAS29 28,846 1
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    TME BAS29 34 1
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    Avnet Asia BAS29 10 Weeks 24,000
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    Suzhou Good-Ark Electronics Co Ltd BAS299

    DIODE ARRAY GP 100V 420MA SOT23
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    DigiKey BAS299 Digi-Reel 5,850 1
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    BAS299 Cut Tape 5,850 1
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    BAS299 Reel 3,000
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    Diodes Incorporated BAS299-7

    DIODE GP 100V 430MA SOT23-3
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    DigiKey BAS299-7 Digi-Reel 5,225 1
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    BAS299-7 Cut Tape 5,225 1
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    BAS299-7 Reel 3,000 3,000
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    Mouser Electronics BAS299-7 23,107
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    Bristol Electronics BAS299-7 8,080 34
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    Quest Components BAS299-7 6,464
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    BAS299-7 6,464
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    Avnet Silica BAS299-7 10 Weeks 3,000
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    Diotec Semiconductor AG BAS299

    SMALL SIGNAL DIODE SOT-23 100V
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    DigiKey BAS299 Bulk 3,000 1
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    Mouser Electronics BAS299 8,978
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    Nexperia BAS29,215

    DIODE AVAL 90V 250MA TO236AB
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    DigiKey BAS29,215 Cut Tape 2,372 1
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    BAS29,215 Digi-Reel 2,372 1
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    BAS29,215 Reel 3,000
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    Mouser Electronics BAS29,215 4,003
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    BAS29 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS29 Continental Device India Silicon Planar Epitaxial High Speed Diode Original PDF
    BAS29 Fairchild Semiconductor High Voltage General Purpose Diode Original PDF
    BAS29 Fairchild Semiconductor Small Signal Diode Original PDF
    BAS29 Kexin General Purpose Controlled Avalanche Diodes Original PDF
    BAS29 NXP Semiconductors BAS29 - General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V Original PDF
    BAS29 Philips Semiconductors General purpose controlled avalanche (double) diodes Original PDF
    BAS29 Philips Semiconductors Silicon Planar Epitaxial High-Speed Diode Original PDF
    BAS29 RFE International Rectifier Diode, Switching Diode, Single, 120 MinV, SOT-23, 3-Pin Original PDF
    BAS29 Transys Electronics SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Original PDF
    BAS29 TY Semiconductor TY Equivalent - General Purpose Controlled Avalanche Diodes - SOT-23 Original PDF
    BAS29 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
    BAS29 Jinan Gude Electronic Device SURFACE MOUNT SWITCHING DIODES Scan PDF
    BAS29 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAS29 National Semiconductor Pro Electron Surface Mount Diodes Scan PDF
    BAS29 National Semiconductor Diode Pro Electron Series Scan PDF
    BAS29 National Semiconductor Silicon Single Junction Diodes Scan PDF
    BAS29 National Semiconductor Diode - Pro Electron Series Scan PDF
    BAS29,215 NXP Semiconductors General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BAS299-7 Diodes Incorporated FAST SWITCHING DIODE SOT23 Original PDF
    BAS29_D87Z Fairchild Semiconductor General Purpose High Voltage Diode; Package: SOT-23; No of Pins: 3; Container: Tape & Reel Original PDF

    BAS29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS29

    Abstract: BAS31 BAS35 l21 smd code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 1999 May 21 Philips Semiconductors Product specification General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 l21 smd code

    smd code marking A8 diode

    Abstract: BAS31 BAS35 BAS29 smd diode marking v2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 2001 Oct 10 2003 Mar 20 Philips Semiconductors Product specification General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode BAS31 BAS35 BAS29 smd diode marking v2

    code a1 SMD

    Abstract: smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors Product data sheet General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 code a1 SMD smd code marking A8 diode l21 smd code smd code marking WV BAS29 BAS31 BAS35

    smd L21

    Abstract: BAS29 BAS31 BAS35
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS


    Original
    PDF ISO/TS16949 OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors Product data sheet General purpose controlled avalanche


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31

    Untitled

    Abstract: No abstract text available
    Text: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector


    Original
    PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29

    BAS29

    Abstract: BAS31 BAS35 MBG440
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors


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    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 MBG440

    L21 SMD

    Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
    Text: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original
    PDF KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1

    BAS29

    Abstract: BAS31 BAS35 smd L21
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.


    Original
    PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21

    smd code marking A8 diode

    Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35


    Original
    PDF M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 smd code marking A8 diode smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35

    Untitled

    Abstract: No abstract text available
    Text: BAS29 BAS29 Connection Diagram 3 3 3 L20 2 1 2 1 1 2NC SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF AV Average Rectified Forward Current


    Original
    PDF BAS29 OT-23 300us, BAS29,

    BAS29

    Abstract: BAS31 BAS35
    Text: Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21


    Original
    PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.


    Original
    PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29â BAS31

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification General purpose controlled avalanche double diodes_ FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:


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    PDF BAS29; BAS31; BAS35 BAS29 BAS31 M8H32

    Untitled

    Abstract: No abstract text available
    Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i


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    PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS29- BAS35 BAS29

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche


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    PDF BAS29; BAS31; BAS35 BAS31 BAS35 BAS29 115002/00/03/pp12

    Untitled

    Abstract: No abstract text available
    Text: • bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope.


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    PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29

    BAS29

    Abstract: BAS31 BAS35 diode 7B4
    Text: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21


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    PDF D00G716 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- diode 7B4

    BAS29

    Abstract: BAS31 BAS35 l21 diode marking
    Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B AS29- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.48 0.38


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    PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- BAS29 l21 diode marking

    BAS3590

    Abstract: BAY71 BA128 BA129 BA130 BA217 BA218 BA316 BA317 BA318
    Text: National Semiconductor NATL Âæ Diode Pro Electron Series 75 200 30 30 50 10 30 50 100 50 100 50 50 200 200 200 1.0 1.0 1.0 1.0 1.0 0.85 0.85 0.85 50 100 10 10 10 10 10 10 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 75 100 150 200 90 90 90 1000 100 100 100


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    PDF BA128 DO-35 BA129 BA130 BA217 BA218 BAS3590 BAY71 BA316 BA317 BA318

    dual diode A7 W

    Abstract: No abstract text available
    Text: Small Signal Diodes SOT23 Type Ratings miniBag Order Number Number l RR Max CD Part Marking A6 A8 A841 A82 L20 D01/5D D18 Max Schematic Single Diode BAS 16 BAS19 BAS20 BAS21 BAS29 MMBD914 MMBD4150 72-0016 72-0019 72-0020 72-0021 72-0029 72-0914 72-4150 500 pc.


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    PDF D01/5D BAS19 BAS20 BAS21 BAS29 MMBD914 MMBD4150 BAV70 BAV74 MMBD2838 dual diode A7 W

    ph 4148

    Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
    Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31


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    PDF BAS29 BA481 BBY31 BAT81 BAS81 BBY40 BC847 BAT54 BC847A BT2907 ph 4148 f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71

    Untitled

    Abstract: No abstract text available
    Text: _ A_ BAS29 BAS31 BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and the BAS35 has two


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    PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29

    Untitled

    Abstract: No abstract text available
    Text: BAS29, BAS31, BAS35 Il SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS2&- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.46 w -H


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    PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS31