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    DIODE MARKING CODE G SOT23 Search Results

    DIODE MARKING CODE G SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56
    		Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE G SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CBAS17

    Contextual Info: Central Sem iconductor Corp. CBAS17 LOW V O LT A G E STABISTOR DESCRIPTION: T h e C E N T R A L S E M IC O N D U C T O R C B A S 1 7 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91.


    OCR Scan     		CBAS17 OT-23 TheCENTRALSEMICONDUCTORCBAS17 100mA 000171b PDF

    Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery


    Original     		DMN3730U AEC-Q101 PDF

    Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C


    Original     		DMN2300U AEC-Q101 PDF

    Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification


    Original     		BSS138 J-STD-020 MIL-STD-202, AEC-Q101 DS30144 PDF

    Contextual Info: ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Fast Switching Speed 80mΩ@ VGS = -10V -4.0A • 4.5V Gate Drive Capability 140mΩ@ VGS =-4.5V ⎯ • Thermally Enhanced SOT23 package •


    Original     		ZXMP3F30FH AEC-Q101 DS33579 PDF

    DMN3730U-7

    Contextual Info: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V


    Original     		DMN3730U AEC-Q101 DS35308 DMN3730U-7 PDF

    Contextual Info: A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V


    Original     		DMN2300U AEC-Q101 DS35309 PDF

    Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 PDF

    Contextual Info: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Features and Benefits Product Summary V BR DSS • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V


    Original     		DMN3730U AEC-Q101 DS35308 PDF

    DMN65D8L-7

    Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 PDF

    DMN65D8L-7

    Abstract: dmn65d8l
    Contextual Info: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 dmn65d8l PDF

    Contextual Info: A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V


    Original     		DMN2300U AEC-Q101 DS35309 PDF

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Contextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE nh PDF

    transistor smd code marking 420

    Contextual Info: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMV30XN O-236AB) transistor smd code marking 420 PDF

    Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PMV16UN O-236AB) PDF

    Contextual Info: Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMV37EN O-236AB) PDF

    FP6736

    Abstract: FP6736S5P marking code C4 Sot 23-5 sot-23-5 marking cy sot-23-5 5R STEP UP DC DC SOT-23-6 FP6736S6 sot-23-6 marking MOSFET P SOT-23-6 marking E1 sot236
    Contextual Info: FP6736 85T Current-Mode fitipower integrated technology lnc. 1.4MHz SOT23 Step-Up DC/DC Converter Description Features The FP6736 is a current-mode, pulse-width modulation and step-up DC/DC converter. The built-in high voltage N-channel MOSFET allows FP6736 for step-up applications with up to 30V


    Original     		FP6736 OT-23-5, OT-23-6, TSOT-23-6 MO-178-C. FP6736-1 FP6736S5P marking code C4 Sot 23-5 sot-23-5 marking cy sot-23-5 5R STEP UP DC DC SOT-23-6 FP6736S6 sot-23-6 marking MOSFET P SOT-23-6 marking E1 sot236 PDF

    Contextual Info: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PMV185XN O-236AB) gate-sou15 PDF

    Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV90EN O-236AB) PDF

    Contextual Info: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMV28UN O-236AB) PDF

    TRANSISTOR SMD MARKING CODE 1 KW

    Contextual Info: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PMV20XN O-236AB) TRANSISTOR SMD MARKING CODE 1 KW PDF

    Contextual Info: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMV32UP O-236AB) PDF

    Contextual Info: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PMV48XP O-236AB) PDF

    Contextual Info: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PMV170UN O-236AB) PDF