DIODE MARKING R6J Search Results

ta1938

Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
Contextual Info: MIL-S-19500/^ 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5835 and 1N5836 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment

1B marking transistor

Abstract: st ld 33 FDD603AL transistor themal
Contextual Info: E M IC O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T his N-Channel logic level enhancem ent m ode power fie ld e ffe c t tra n s is to r is produced using F a irc h ild ’s proprietary, high cell density, DM OS technology. This

FDD5690

Contextual Info: =M l C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDZ201N

Contextual Info: S E M IC O N D U C T O R tm FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space

Contextual Info: PD - 9.894A International IQR Rectifier IR F Z 4 8 S /L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching V R dss d s (o h ) = 60V = 0 .0 1 8 0 lD = 5 0 A

IRFZ46

Contextual Info: PD -9.922A International IQ R Rectifier IR F Z 4 6 S /L HEXFET P ow er M O S F E T Advanced Process Technology Surface Mount IRFZ46S Low-profile through-hole (IRFZ46L) 175°C Operating Temperature Fast Switching V dss = 50V R d s (o h ) = 0.024Í2 lD = 72 A

Contextual Info: S E M IC O N D U C TO R PRELIMINARY tm FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 1.7 A, 60 V. to improve the overall efficiency of DC/DC converters using Rds on = 0.100 £1 @ V GS = 10 V

jx4148

Abstract: J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

b1545

Abstract: BR1545 BR1545CT MBR1535CT b1535 b1545 diode b1545 motorola BR1535C
Contextual Info: MOTOROLA Order this document by MBR1535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR1535CT MBR1545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-o f-th e-art devices have the following features:

Contextual Info: SURFACE MOUNT SCHOTTKY BARRIER DIODE I/UTEMir / p o w e fs e h co n w jcto r Features Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package • • • • SOD-323 □ A B Mechanical Data_ • • *1Eh- -H Case: SOD-323, Plastic

BYT261PIV400M

Contextual Info: M OTOROLA Order this document by BYT261PIV-400M/D SEMICONDUCTOR TECHNICAL DATA U ltra fa s t Power R ectifiers BYT261PIV-400M D u al high v o lta g e re ctifie rs su ited fo r S w itc h m o d e P o w e r Supplies and other power converters. • Very Low Reverse Recovery Tim e

IRLI3705N

Contextual Info: PD - 9.1369B International Iö R Rectifier IRLI3705N HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

Contextual Info: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA MBR4015LWT Advance Information SWITCHMODE Pow er R ectifier Motorola Preferred Device . . . using the Schottky Barrier principle this s ta te -o f-th e -a rt device is dedicated to the ORing function in paralleling power supply and has the

b2045

Abstract: B2045 motorola B2035 2045c Single Schottky diode b2045 2N6277
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: SEM IC O N D U C TO R FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special

DIODE MARKING 1M

Abstract: IOR 451
Contextual Info: PD - 9.1501 A International IÖR Rectifier IRFIZ24N HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

Contextual Info: P D -9.1673 International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier

Contextual Info: PD - 9 .1673A International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier

BR2030C

Abstract: MBR2015CTL B2015 tl 2n2222
Contextual Info: MOTOROLA Order this document by MBR2015CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Dual S ch o ttky Pow er R e ctifiers MBR2015CTL MBR2030CTL . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te-o f-th e-art geometry features epitaxial construction with

2N7367

Abstract: 2N3768 2N7368 IRGMIC50U MIL-PRF19500 TRANSISTOR SUBSTITUTION 1993 marking 589A
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 July 1998 INCH-POUND MIL-PRF-19500/589A 15 April 1998 SUPERSEDING MIL-S-19500/589 24 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR

DIODE D3S 5D

Contextual Info: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

DIODE D3S 5D

Abstract: diode D3s IRFZ3
Contextual Info: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

DO-213AA

Abstract: TZQ5221B TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5267B IR LF 0038
Contextual Info: 3IÌB5 TZQ5221B - TZQ5267B 500mW SURFACE MOUNT ZENER DIODE LITEMZI POWER SEMICONDUCTOR y Features • • • • • 500m W Power Dissipation High Stability Low Noise Outline Similar to JED EC D O -213AA Hemetic Package Mechanical Data_ •

BZM5221B

Abstract: BZM5222B BZM5223B BZM5224B BZM5225B BZM5226B BZM5267B
Contextual Info: BZM5221B - BZM5267B VISHAY 500mW SURFACE MOUNT ZENER DIODE LITEMZI y POWER SEMICONDUCTOR Features 500m W Power Dissipation High Stability Low Noise Fits onto S O D 323/S O T 23 Foot Print Hemetic Package Mechanical Data Case: MicroMELF Terminals: Solderable per M IL-STD-202,