DIODE N9 Search Results

Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure

SVC333

Abstract: C25V Ne935-2 ACM 944 1096-11 c30 diode
Contextual Info: Ordering number : EN935B _ S VC 33 3 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode works at high tuning voltage and has the high Q and the sufficiently high capacitance ratio and

904nm laser diode

Abstract: 904nm N904-10
Contextual Info: n904nm 10mW Laser Diode NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N904-10 INFRARED LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 904nm (Typ.) Optical Power: 10mW CW Threshold Current: 25mA (Typ.)

904nm laser diode

Abstract: 904nm N904 Photo DIODE (any type) datasheet INFRARED DIODES N904-5 laser diode 5mw
Contextual Info: n904nm 5mW Laser Diode NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N904-5 INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 904nm (Typ.) Optical Power: 5mW CW Threshold Current: 20mA (Typ.)

N980-15

Abstract: infrared diode
Contextual Info: n950nm 15mW Laser Diode NVG, INC. INFRARED LASER DIODES MODEL # N980-15 Technical Data INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 980nm (Typ.) Optical Power: 15mW CW Threshold Current: 20mA (Typ.)

904nm laser diode

Abstract: 904nm laser diode 30mw N904-30
Contextual Info: n904nm 30mW Laser Diode NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N904-30 INFRARED LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 904nm (Typ.) Optical Power: 30mW CW Threshold Current: 25mA (Typ.)

1000lux

Abstract: Tyntek
Contextual Info: Si Photo-diode Chip－ TK N90PD 1. Scope •The specification applies to PIN silicon photo-diode chips. • Type：TK N90D 2. Structure •PIN planar type. •Electrode topside（cathode）：Aluminum. backside（anode ）： Gold alloy. 3. Size •Chip size

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

FD600R06ME3_S2

Abstract: QS700
Contextual Info: Technische Information / technical information FD600R06ME3_S2 IGBT-Module IGBT-modules EconoDUAL 3 Chopper Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled Diode EconoDUAL™3 chopper module with the trench/fieldstop IGBT3 and Emitter Controlled diode

diode rj 93

Abstract: IHD06N60RA B127 9C13 Z8B00003328 bk 36
Contextual Info: IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

FS50R12KT3

Contextual Info: Technische Information / technical information FS50R12KT3 IGBT-Module IGBT-modules EconoPACK 2 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FS50R12KT3

Abstract: 60HP
Contextual Info: Technische Information / technical information FS50R12KT3 IGBT-Module IGBT-modules EconoPACK 2 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

BC237

Abstract: marking code N9 8-pin
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90

FF200R12KT4

Abstract: diode T-71
Contextual Info: Technische Information / technical information FF200R12KT4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with fast trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter

MV104

Abstract: 150L max3742 semiconductor mv104
Contextual Info: MOTOROLA SEMICONDUCTOR o TECHNICAL Silicon ~ning Order this document bv MV104~ DATA F Diode — This device is designed for FM tuning, general frequency control and tuning, or any top–of–theline application requiring back–to–back diode configurations for minimum

Zener Diode SOD523 24v

Abstract: marking code zener diode A SOD523 sod marking m7 zener diode n8 M7 marking diode sod m7 M7 zener diode diode marking N9
Contextual Info: Central" CMOZ2L4 THRU CMOZ43L Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an

Diode marking m7

Abstract: zener diode n8 zener diode M7 M7 zener CMOZ10L CMOZ11L CMOZ12L CMOZ13L CMOZ15L CMOZ16L
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

ZENER DIODE M5

Abstract: zener diode n8 Diode marking m7 zener n7 diode 24 M7 zener marking of m7 diodes N6 marking code zener diode M7 n2 Diode Zener
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

p6 code marking for diode

Abstract: diode MARKING CODE P9 Diode marking m7 n1 a marking cmoz4l7 zener diode n8
Contextual Info: Central" MOZ2L4 THRU CMOZ43L Semiconductor Corp. SURFACE MOUNT ULTRAmini“ LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator

DAN222M3T5G

Abstract: m1n9
Contextual Info: DAN222M3T5G Product Preview Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low

NSDEMN11XV6T1

Abstract: NSDEMN11XV6T1G NSDEMN11XV6T5 NSDEMN11XV6T5G diode N9
Contextual Info: NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface mount

NSDEMN11XV6T1

Contextual Info: NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface mount

476A diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low

SOT-563

Abstract: NSDEMN11XV6T1
Contextual Info: NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface mount