DIODE PJ 257 Search Results

Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA

STRH12P10GYG

Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications

pj 72 diode

Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Contextual Info: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .

Contextual Info: I 1/ V R R I 15 FRS230D, FRS230R, S E M I C O N D U C T O R 7A, 200V, 0.515 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 200V, RDS on = 0.515£2 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma

shbb

Abstract: T11G
Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS140 D, R, H November 1994 2N7284D, 2N7284R 2N7284H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Features Package • 17A, 100V, RDS(on) = 0.145Q TO-257AA

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
Contextual Info: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case

smd transistor pk1

Abstract: Philips sbc 345 Temperature Control switching regulator ic LM 5304 pj12 diode ph10 led display 16 x 32 ic 5304 smd 8 pin pj14 diode ITT 7346 PJ8 diode MPC5516
Contextual Info: MPC5510EVB User Manual Revision 1.0 – September 2007 Note – This user manual is written for EVB PCB revision E MPC5510EVB User Manual Rev 1.0 Sept 2007 Revision History: Revision 0.1 Date March 2007 Author A. Robertson 1.0 September 2007 A. Robertson Comment

KBP 2060

Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1SMA4729 SERIES PanJit Part Number: 1SMA4729 SERIES Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Kaori Huang DATE: JUL.16.2005 DATE: JUL.16.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

CD74AC257

Abstract: CD74AC257E CD74AC257M CD74ACT257 CD74ACT257E CD74ACT258 CD74ACT258E
Contextual Info: CD74AC257, CD74ACT257, CD74ACT258 Jto Tfxa, In s t r u m ents Data sheet acquired from Harris Sem iconductor _ schs248 August 1998 . _ , Quad 2 -lnput Multiplexer with Three-State Outputs Description Features • CD74AC257, CD74ACT257 Non-Inverting Outputs

MS5F3984

Contextual Info: li. • I r i l ü J i ' i ' H ' t i ' ' J i » r Jin l Ih* g 'g ix i i<’ Ç.T 1er !•'■« i T i j i - i u l j c i ' j i i ' i g i o n * » n | ij| f i ^l E ^ e i i l C w J ¡ <l «n ilili J p j i i . i ' i' i r v i n i <I\ ò w lb M a gi Cfl. O d ,

ifr 044

Abstract: 2SK484 JE 720 transistor JE 33 TRANSISTOR C 5857 X108 26-JE
Contextual Info: NEC j m * T / v r x MOS Field E ffe c t P o w e r T ra n s is to r A 2SK484 N f t ^ ^ '° 7 - M O S j i m FET m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 8 4 i±, > f - M O s n S F E T f"^ > H I/P A C K A G E DIMENSIONS Unit : mm

74ALVT16245

Abstract: AV16245DL
Contextual Info: Philips Semiconductors Product specification 2.5V/3.3V ALVT 16-bit transceiver 3-State FEATURES 74ALVT16245 • Latch-up protection exceeds 500mA per JEDEC Std 17 • 16-bit bidirectional bus interface • ESD protection exceeds 2000V per MIL STD 883 Method 3015

Contextual Info: FAST CMOS 16-BIT TRANSPARENT LATCHES IDT54/74FCT16373T/AT/CT/ET IDT54/74FCT162373T/AT/CT/ET Integrated D evice T ech n olo gy, In c DESCRIPTION: FE A T U R E S : • Common features: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for

smd ka2 diode

Contextual Info: Whnïï HEW LETT* mLriM P a c k a r d AC/DC to Logic Interface H erm etically Sealed O ptocouplers Technical Data HCPL-576X* 5962 8947701 *See matrix for available extensions Features Applications Description • Dual Marked w ith Device Part Number and DESC

crystal oscillator 1 MHz 4 pins ntk

Abstract: CT 1975 sam CT 1975 - sam intel MCS-48 crystal ntk 8 mhz mcs-48 users manual "rca application note" crystal oscillator 40 MHz 4 pins ntk IRF mosfet book
Contextual Info: in t e i APPLICATION NOTE AP-155 quantum electronics Box 3912Ó2 Bramtey 2018 June 1983 Order Number: 230659-001 In te l C o rp o ra tio n m akes no w a rra n ty fo r th e use o f its p ro d u c ts and a ssum es n o re s p o n s ib ility fo r any e rro rs w h ic h m ay

marking M9u

Abstract: 5962-E1257-2
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED R EV SH EE T REV SH EET R E V STATUS O F SH EETS REV SH EET 1 PM ICN /A 4 5 6 7 8 9 10 11 12 13 14 15 DEFENSE ELECTRO NICS SU PPLY CENTER DAYTON, OHIO 45444 CMA In fA / n A y s . A tt DR/ iWING APPR O V A L^ ffË T '

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

Fairchild ZN 1010

Abstract: GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000
Contextual Info: FGE Series ECL Gate Arrays PAIRCHIL.D A Schlum berc T'HO Qr>y 005596 January 1986 Description U/v\A m b The FGE Series of ECL gate arrays are the fastest silicon gate arrays com m ercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

QFP44-P-910-V1K

Abstract: VOICE RECORDER circuits VOICE RECORDER playback system 80C154 msm6388 ST M240 MSM6389 MSM6586 MSM6587 QFP44-P910-V1K
Contextual Info: O K I Sem iconductor MSM6388 ADPCM SOLID STATE RECORDER GENERAL DESCRIPTION The MSM6388 is a "solid-state recorder" LSI developed using ADPCM A daptive Differ­ ential Pulse C ode M odulation technology. W hen an external m icrophone, speaker d riv­ ing am plifier, and OKI's original 1M -bit serial

FGE0500

Abstract: FGE2000 FGE2500 F100K ECL 300 series and design guide Fairchild 100K series ECL Fairchild ZN 1010 1240 picosecond la 4440 LA 4440 circuit diagram PS-1050
Contextual Info: FGE Series ECL Gate Arrays F A IR C H IL D A Schlumberc J/n A 005596 January 1986 n Description 0r>y ^ Gate Array Division FiC The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

Magnetic Field Sensor FLC 100

Abstract: CL02A400T MC1A310AT g85 wafer 12 volt electronic ballast for xenon light RJ45-B act ge 106 18p IEC61009-1 gec switchgear DDICE60
Contextual Info: Product Catalogue 2013 Circuit Breakers Contactors & Overloads Motor Protection Photovoltaic Fusegear Weatherproof Switchgear Isolators & Switching Relays & Timers Pilot Devices Metering Enclosures Cable Accessories Surge & Safety Lighting CONTENTS: IPD Industrial Products is a proudly Australian owned

Contextual Info: CXP5070 SONY. CM O S 4-bit 1 Chip Microcomputer Piggyback type Description CXP5070 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP5076/CXP5078. Features • Instruction cycle

internal structure 74LS00 nand gate

Abstract: Multivibrator 7400 examples 93831A 7400 fan-out RS-481-A 74lsxxx 74LS00 gate IC TTL 7400 quiescent power IC 7400 truth table TTL 7400 propagation delay
Contextual Info: GENERAL INFORMATION TTL in Perspective performance. We therefore recommend the VHC, High Speed and FACT products for all new 5.0 Volt designs. Further improvements in power reduction can be achieved using the LVX, LCX or VCX running at 3.3 Volts. Improvements in electrostatic discharge susceptibility in

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes