DIODE RG 39 Search Results

1SV147

Abstract: toshiba lable information
Contextual Info: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

NDF10N60ZG

Abstract: 221AH H1AA1
Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

NDF10N60ZG

Abstract: NDF10N60ZH NDF10N60Z
Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

NDF10N60ZG

Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A VCES =1200V VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

Contextual Info: Si7374DP New Product Vishay Siliconix N-Channel 30–V D–S MOSFET with Schottky Diode PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 FEATURES D TrenchFETr PowerMOSFET D 100 % Rg Tested Qg (Typ) APPLICATIONS

Si7374DP

Abstract: si7374 52604
Contextual Info: Si7374DP New Product Vishay Siliconix N-Channel 30–V D–S MOSFET with Schottky Diode PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 FEATURES D TrenchFETr PowerMOSFET D 100 % Rg Tested Qg (Typ) APPLICATIONS

Contextual Info: MOTOROLA Order this document by BAS19LT1/D SEMICONDUCTOR TECHNICAL DATA High V oltage Sw itching Diode BAS19LT1 Motorola Preferred Device 3 O CATHODE 14 O 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit VR 120 V dc if 200 m Adc iF M s u rg e 625 m Adc

SI4823DY

Contextual Info: New Product Si4823DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 Qg (Typ.) 4 nC • LITTLE FOOT Plus Schottky • 100 % Rg Tested

74253

Abstract: SI4334DY 9.1b diode 61222
Contextual Info: Si4334DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 Qg (Typ)

book,circuit

Abstract: Si4823DY-T1-E3 SI4823DY
Contextual Info: New Product Si4823DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 Qg (Typ.) 4 nC • LITTLE FOOT Plus Schottky • 100 % Rg Tested

74253

Contextual Info: Si4334DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 Qg (Typ)

Rx51

Contextual Info: SIL31 250A : Outline Drawings GEIUERAL-USE RECTIFIER DIODE Features • H ig h reverse v o lta g e c a p a b ility • X £ y K '<—XWi S tu d m o u n te d • f f l j i * : A p p lic a tio n s • B attery c h a rg e rs B ru sh -le ss g e n e ra to rs

Contextual Info: I I Bulletin 127092 rev. A 09/97 International I0 R Rectifier IRK.F132. s e rie s FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 130 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H ig h s u rg e c a p a b ility

Contextual Info: I I Bulletin 127097 rev. A 09/97 International I0 R Rectifier IRK.F102. s e rie s FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 105 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H ig h s u rg e c a p a b ility

A 3700

Abstract: 1W ZENER DIODE PTZ10A PTZ27A
Contextual Info: Diodes 1W Zener Diode PTZ Series •A pplications •E x te rn a l dimensions Units: mm 1 )V o lta g e regu lation an d v o lta g e lim iting 2 )V o lta g e su rg e ab sorption •F e a tu re s 1 )D e s ig n e d fo r m ounting on sm all s u rfa c e a re a s (P M D S )

TC65T

Abstract: TLM 431 KCQ60A04 diode schottky 4T
Contextual Info: SCHOTTKY BARRIER DIODE 60A/40V KCQ60A04 FEA TU RES 5.31.209 4.7U35) o S im ila r to T O -247A C T O -3P ) Case o D u a l D iodes-C athode Com m on o Low F o rw a rd V o ltag e D rop o L o w P o w er L oss, H igh E fficiency O H igh S u rg e C apability 3 .2 (126)- t

ERG51

Abstract: SIG01
Contextual Info: ERG51 ,SIG01 30A — is a m m ? 4 *— k B i n s t a : Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE • 4 $ £ I Features • - 7 i'B 's J - " / '? Glass passivated c h ip • H ig h n o n -re p e titiv e peak reverse v o lta g e {VRSM) H ig h s u rg e c u rre n t ca p a b ility

KA2 DIODE

Abstract: DT 7130 IC rc 3150 IRKT 180
Contextual Info: International S Rectifier s e r ie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ ■ I ■ F a st tu rn -o ff th yristo r F a st re c o v e ry d io d e H igh s u rg e c a p a b ility E le c tric a lly is o la te d b a s e p la te

Contextual Info: SCHOTTKY BARRIER DIODE KCQ60A04 6o a / 4 o v FEATURES o S im ila r to T O -2 4 7 A C T O -3P C a se O D u a l D io d e s -C a th o d e C o m m o n o L o w F o r w a r d V o lta g e D ro p O L o w P o w e r L o ss, H ig h E ffic ie n c y o H ig h S u rg e C a p a b ility

D-68623

Contextual Info: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

40N120

Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C