DIODE RN 1220 Search Results

diode RP 1040

Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)

fr 608 diode

Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)

Contextual Info: t Q V NS e* mt ii co on na d\ u c t , o r . M ay 1996 ND P6051 / NDB6051 N-Channel Enhancement M ode Field Effect Transistor G e n e ral D e s c rip tio n F eatures T hese N -C h a n n e l e n h a n c e m e n t m o d e p o w e r fie ld • 4 8 A , 5 0 V . RDS 0N = 0 .0 2 2 0

DIODE REDRESSEMENT 4040

Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)

DS11

Abstract: DT455N
Contextual Info: DT455N VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

6N13S

Contextual Info: MARKTECH INTERNATIONAL lfiE D • STTTbSS OQQGSlt 4 HIGH SPEED COUPLER 6N13S, 6N136 INFRARED LED* PHOTO IC The 6N135 and 6N136 consist| off a j high [emitting, diode and a one chip photo diode-translstor. Each unit Is an 8-lead DIP package. APPLICATIONS — K—

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP36N06V TMOS V Power Field Effect Transistor Motorola Preferred Devlc« N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

VARTA 170 dk

Abstract: energy meter circuit diagram em 301 l and t make CR-P2 varta VARTA 250 dk CH-8952 VARTA crp2 lithium 6 v varta v 60 r diode catalogue VARTA 60 dk TAG 8952
Contextual Info: Varta Micro Batteries Pr i m a r y L i t h i u m C e l l s Primary Lithium Cells Sales Program and Technical Handbook Contents 1. General Information, 3 - 8 1.2 Constructions of Lithium Cells, 4 - 5 1.3 Characteristics and Applications, 6 1.4 Applications for Primary Lithium Cells, 7

mosfet transistor 32 l 428

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POW ER FET 32 AMPERES 60 VOLTS R DS on = 0-04 OHM N-Channel Enhancement-Mode Silicon Gate

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

Contextual Info: FA IR C H ILD MICDNDUCTQ R May1996 tm NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel en hance m en t m ode po w e r field effect tra nsistors are produced using Fairchild's proprietary, high cell

step motor em 483

Contextual Info: MOTOROLA Order this document by MTB36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 32 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: pm! SW-201/SW-202 QUADSPSTJFET ANALOG SWITCHES \ ! h m i Si i h i ; s hi» FEATURES GENERAL DESCRIPTION SW-201 The SW-201 and SW-202 each consist of four independent, single-pole, single-throw SPST) analog switches, which may be independently d igitally controlled. Each SW-201

SW201G

Abstract: SW201GP SW202GP 3 DG 201 SW-202 HI201 IH201 SW-201 SW201GS
Contextual Info: Quad SPST JFET Analog Switches ANALOG DEVICES □ SW-201/SW-202 FEATURES G ENERAL D E S C R IP T IO N SW-201 T he SW-201 and SW-202 each con sist o f fo u r independent, single -po le , sin g le -th ro w SPST analog sw itches, w hich may be inde p e n d e n tly d ig ita lly co n tro lle d . Each SW-201

Contextual Info: Advanced P o w e r MOSFET S F W FEATURES = -200 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n - ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -200V

irfu9220

Abstract: 7z mosfet AN-994 IRFR9220 T0252AA
Contextual Info: PD-9.522D International irêRl Rectifier IRFR9220 IRFU9220 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9220 Straight Lead (IRFU9220) Available in Tape & Reel P-Channel Fast Switching

SFP9640

Contextual Info: Advanced SFP9640 P o w e r MOSFET FEATURES D S S — -200 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = -11 A ■ E xtended S afe O pe ra ting A rea

LTA 702 N

Abstract: LTA 702 1A0500
Contextual Info: w w w .h a m lin . co m H E3600 M in ia tu re S .I.L .R e la y F e a tu re s a n d B e n e fits F e a tu re s B e n e fits A p p lic a tio n s • • • • Te le c o m s • In stru m e n ta tio n • Pro c e ss • A u to m a tic Te st Eq u ip m e n t

f4496

Contextual Info: HITACHl/íOPTOELECTRONICS> 449B2ÜS '‘HT TÄCHl / ÜPl'ÚtCtO IK U N Í U S T 73 D E | 4 4Tb2DS QGIDIEÌ 73C 10129 D PM1220B-SILICON N-CHANNEL MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • P o w e r M O S FE T M o d u le . • L o w O n R e s is ta n c e .

Contextual Info: - •_ yK UNITRODE CORP — TE 9347963 U N ITR O D E CO RP DE~ ^347^^3 GD10ÛT3 0 92D 10893 D P O W E R M O S F E T T R A N S IS T O R S 50 Volt, 0.05 Ohm N-Channel ^ nzso T- T f l - l l FEATURES D E S C R IP T IO N • • • • • • These low voltage power MOSFETS have been designed for optimum performance in low

MB71C44-35

Abstract: MB71C44-45
Contextual Info: F U JIT S U PROGRAMMABLE BICMOS 6 5 5 3 6 -B IT READ ONLY MEMORY MB71C44-35 MB71C44-45 N o vem b er 1988 Edition 1.0 Bi-CMOS 65536-BIT DEAP PROM 8192 WORDS X 8 BITS The Fujitsu M B71C44 Is high speed B I-C M O S T T L ele c tric a lly field p ro g ra m m a b le read

4435 m

Contextual Info: F U JITSU I PROGRAMMABLE BICMOS 6 5 5 3 6 -B IT READ ONLY MEMORY B i-C M O S 65536-B IT DEAP PROM 8192 W ORDS X 8 BITS The Fujitsu M B71C44 is high spee d B i-C M O S T T L e le c tric a lly flekJ pro g ra m m a b le read only m e m o ry organized as 16384 w o rds by 8 b its . W ith th re e s ta te o u tp u ts , m em o ry

Diode smd f6

Abstract: TZA10 SMD Diode 2FS 7812 3 phase 2 speed soft start motor control diagram industrial servo drivers operation manuals SMD transistor SF2 CD10 QFP64 SAA7325
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA7325 Digital servo processor and Compact Disc decoder with integrated DAC CD10 Product specification File under Integrated Circuits, IC01 1999 Jun 17 Philips Semiconductors Product specification Digital servo processor and Compact Disc

Contextual Info: 500mA High Side PNP Driver with On Chip Flyback Diode Description The CS-8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback diode clamp is incorporated for induc­