Untitled
Abstract: No abstract text available
Text: 4Ô55452 International i ü Rectifier D G157Gb 30Ô • IN R PD-9.654A IRFR9014 IRFU9014 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9014 Straight Lead (IRFU9014) Available in Tape & Reel
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OCR Scan
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G157Gb
IRFR9014
IRFU9014
IRFR9014)
IRFU9014)
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PDF
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Untitled
Abstract: No abstract text available
Text: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching
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OCR Scan
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IRFR2605)
IRFU2605)
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PDF
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EM- 546 motor
Abstract: No abstract text available
Text: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
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OCR Scan
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HGTD1N120BNS,
HGTP1N120BN
HGTD1N120BNS
HGTP1N120BN
O-252AA
T0-252AA
EM- 546 motor
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PDF
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0C28
Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
Text: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA'Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common
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OCR Scan
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A/100
00V/trr
30nsec
6VF10CT
6VF20CT
6VF10CTF
6VF20CTF
O-251AA
O-252AA
T0-252AA
0C28
200v 3A ultra fast recovery diode
6VF20CTF
40 hmr 150 DIODE
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PDF
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G3N60B
Abstract: No abstract text available
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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OCR Scan
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HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
GTD3N60B3S,
HGT1S3N60B3S
HGTP3N60B3
115ns
1-800-4-HARRIS
G3N60B
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 4VQ03CT 4VQ04CT 4VQ03CTF 4VQ04CTF 4.4 A /30— 40V 2.38M A X .094 FEATURES • TO-251AA Case 2.38 M A X (.094) n 0 TO-252AA Case, Surface Mount Device 16-221245) 0.90035) N O M IN A L ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop
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OCR Scan
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4VQ03CT
4VQ04CT
4VQ03CTF
4VQ04CTF
O-251AA
O-252AA
T0-252AA
20x20mm
4VQ03CT
4VQ03CTF
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 50VQ09 50VQ10 50VQ09F 50VQ10F 5. 5A / 90— 100V TO-2 5 2 A A TO-2 S 1 AA FEATURES 2.38M AX .094 6.71.2641 6.41.2521" 5.351.211) "5.051.199)" ° TO-251AA Case a> °T0-252AA Case Surface Mount Device 2.38M A X (.094) 1.27(.05) M AX
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OCR Scan
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50VQ09
50VQ10
50VQ09F
50VQ10F
O-251AA
T0-252AA
O-252AA
00Giab2
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PDF
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F10P03L
Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Text: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac tured using the MegaFET process. This process, which uses
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OCR Scan
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RFD10P03L,
RFD10P03LSM,
RFP10P03L
1-800-4-HARRIS
F10P03L
10P03L
p-channel mosfet BL
Harris Semiconductor Integrated Circuits
N10T
TC227
RFD10P03L
RFD10P03LSM
RFD10P03LSM9A
RFP10P03L
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PDF
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Untitled
Abstract: No abstract text available
Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model
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OCR Scan
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HUF76129D3,
HUF76129D3S
O-252AA
T0-252AA
330mm
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PDF
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Untitled
Abstract: No abstract text available
Text: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)
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OCR Scan
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Mfl55452
IRFR224
IRFU224
IRFR224)
IRFU224)
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PDF
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IRFR210
Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET
Text: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET
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OCR Scan
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t-35-25
IRFU210
IRFR210,
IRFR212,
IRFU210,
IRFU212
IRFR210TR
IRFR210
IRFR212
IRFU210
UJ31
irfh212
k 3525 MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V
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OCR Scan
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IRFR9120N)
IRFU9120N)
-100V
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PDF
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Untitled
Abstract: No abstract text available
Text: jC T jr c RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS semiconductor July 1996 File Number 4075.1 6A, 100V - 200V Ultrafast Dual Diodes Features RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS and RURD620CCS are ultrafast dual diodes
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OCR Scan
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RURD610CC,
RURD615CC,
RURD620CC,
RURD610CCS,
RURD615CCS,
RURD620CCS
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PDF
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ur420
Abstract: No abstract text available
Text: RURD420U y / S em iconductor February 1999 Advance Information 3A, 200V Ultrafast Diode File Number Features The RURD420U is an ultrafast diode with soft recovery char acteristics trr < 30ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar con
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OCR Scan
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RURD420U
RURD420U
TA49034.
ur420
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PDF
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10J2
Abstract: 1B08S 1B06S 50WF20 10JF1 30WF20F 50WF40F 1B01S 1B02S 1B04S
Text: SURFACE MOUNTED DEVICES INTERNATIONAL RECTI FIE R 2bE D • INTERNATIONAL RECTIFIER 4ÖS54S5 001GES7 fc. IOR ■ T - ô / -£>3 ~ STANDARD RECOVERY RECTIFIERS Part Number 10J1 10J2 10J4 VfMi 'F AV 0 TC VRRM (V) (A) °C <FM ‘ w IV) too 1.0 1.0 1.0 31 31
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OCR Scan
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S54S5
001GES7
T0-243AA
S0T-89)
10JF1
10JF2
10JF3
10JF4
6CWF10F
6CWF20F
10J2
1B08S
1B06S
50WF20
30WF20F
50WF40F
1B01S
1B02S
1B04S
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PDF
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75307D
Abstract: 75307P TA75307 HUF75307D3
Text: HUF75307P3, HUF75307D3, HUF75307D3S in t e r s il J u n e !99 9 D a ta S h e e t 15A, 55V, 0.090 Ohm, N-ChanneI UitraFET Power MOSFETs Th ese N-Channel power M O SFETs are manufactured using the File N u m b e r 4 3 5 3 .6 Features • 15A, 55V • Simulation Models
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OCR Scan
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HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307D3S
AN7254
AN7260.
75307D
75307P
TA75307
HUF75307D3
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PDF
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Untitled
Abstract: No abstract text available
Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,
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OCR Scan
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RFD8P06LESM,
RFP8P06LE
0-300i2
1-800-4-HARRIS
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PDF
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AN9321
Abstract: AN9322
Text: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve
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OCR Scan
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RFD3N08L,
RFD3N08LSM
RFD3N08L
RFD3N08LSM
TA09922.
AN7254
AN7260.
AN9321
AN9322
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PDF
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50VF10F
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 50VF10 50VF20 50VF10F 50VF20F 5.5A/100~ 200V/trr : 40nsec 2 .3 8 M A X .094 FEATURES ° TO-251AA Case 2 .3 8 M A X (.094 ) n • TO-252AA Case, Surface Mount Device 0 .9 (0 3 5 ) N O M IN A L 5 .9 8 (2 3 5 ) 1_ ° Ultra - Fast Recovery
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OCR Scan
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50VF10
50VF20
50VF10F
50VF20F
A/100~
00V/trr
40nsec
O-251AA
O-252AA
T0-252AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF 2.2A /30— 40V 2 .38M A X .0 9 4 ’~ 6 .4 (.2 5 2 ) ' , 5 .3 5 1 2 1 1) 1.271.05) MAX r 5 .0 5 U 9 9 ) FEATURES °TO-251AA Case I •T0-252AA Case, Surface Mount Device 2.38M A X (.094) IA n 1
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OCR Scan
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2VQ03CT
2VQ04CT
2VQ03CTF
2VQ04CTF
O-251AA
T0-252AA
9C035)
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PDF
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4VQ09CT
Abstract: 4VQ09CTF 4VQ10CT 4VQ10CTF 100V schottky diode
Text: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4 .4 A / 9 0 ~ 1 0 0 V 6.71264 * 6.4 .252)' ,5-35(.211). 2.38MAX 1.094) FEATURES •TO-251AA Case 2.38MAX (.094) ll.27i.05) Im a x n o TO-252AA Case, Surface Mount Device 6.22Í.245) 5.98Í.235) 0.9Í.035)
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OCR Scan
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4VQ09CT
4VQ10CT
4VQ09CTF
4VQ10CTF
O-251AA
O-252AA
38MAX
38MAX
58MAX
4VQ10CTF
100V schottky diode
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PDF
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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OCR Scan
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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PDF
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3n60a4
Abstract: BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S HGT1S3N60A4S9A
Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 in te r r ii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT 4825 Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and
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OCR Scan
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HGTD3N60A4S,
HGT1S3N60A4S,
HGTP3N60A4
HGT1S3N60A4S
HGTP3N60A4
TA49327.
O-263AB
O-263AB
330mm
3n60a4
BH Ra
transistor equivalent 3N60A4
3N60A4 equivalent
HGTD3N60A4S
A9688
ice 265
vqe 24 e
HGT1S3N60A4S9A
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PDF
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diode F 82 bp
Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip
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OCR Scan
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10DS1
EC10DS2
EC10DS4
EC10DS6
EC10Q
EC10QSO
10QS05
10QS06
EC10QS10
EC15Q
diode F 82 bp
DIODE BP
ZF8.2
ZF-8.2
Zf12
smd zener bp
ZF24
ZF30
Q05CT
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PDF
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