DIODE S404 Search Results

DIODE S404 Result Highlights (5)

Part	Manufacturer	Description
CUZ30V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 30 V, USC
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
CUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36 V, USC
CUZ20V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC

DIODE S404 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
40427 Abstract: SUD70N03-06P Contextual Info: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)	Original	SUD70N03-06P O-252 S-40427--Rev. 15-Mar-04 40427 SUD70N03-06P	PDF
Si3441BDV Abstract: Si3441BDV-T1 Contextual Info: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1	Original	Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 S-40424--Rev. 15-Mar-04	PDF
SUD50N03-16P Contextual Info: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab	Original	SUD50N03-16P O-252 SUD50N03-16P--E3 S-40466--Rev. 15-Mar-04 SUD50N03-16P	PDF
136B Contextual Info: SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 47 APPLICATIONS 0.027 @ VGS = 4.5 V	Original	SUM47N10-24L O-263 SUM47N10-24L--E3 S-40434--Rev. 15-Mar-04 136B	PDF
Si3447BDV Abstract: Si3447BDV-T1 72020 Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance	Original	Si3447BDV Si3447BDV-T1 Si3447BDV-T1--E3 S-40424--Rev. 15-Mar-04 72020	PDF
Contextual Info: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)	Original	SUD70N03-06P O-252 SUD70N03-06P 08-Apr-05	PDF
Contextual Info: SUM47N10-24L Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 47 APPLICATIONS 0.027 @ VGS = 4.5 V	Original	SUM47N10-24L O-263 SUM47N10-24L--E3 08-Apr-05	PDF
SUD50N03-16P Contextual Info: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab	Original	SUD50N03-16P O-252 SUD50N03-16P--E3 08-Apr-05 SUD50N03-16P	PDF
Si3447BDV Abstract: 1600 v mosfet ultra low igss pA Si3447BDV-T1 Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance	Original	Si3447BDV Si3447BDV-T1 Si3447BDV-T1--E3 08-Apr-05 1600 v mosfet ultra low igss pA	PDF
Si3441BDV Abstract: Si3441BDV-T1 Contextual Info: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1	Original	Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 08-Apr-05	PDF
Si3441BDV Abstract: Si3441BDV-T1 Contextual Info: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1	Original	Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 18-Jul-08	PDF
SUD50N03-16P Contextual Info: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab	Original	SUD50N03-16P O-252 SUD50N03-16P--E3 18-Jul-08 SUD50N03-16P	PDF
Si3447BDV Contextual Info: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance	Original	Si3447BDV Si3447BDV-T1 Si3447BDV-T1--E3 18-Jul-08	PDF
SUD70N03-06P Contextual Info: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)	Original	SUD70N03-06P O-252 18-Jul-08 SUD70N03-06P	PDF

Si3454ADV Abstract: Si3454ADV-T1 Contextual Info: Si3454ADV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.5 0.085 @ VGS = 4.5 V 3.8 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View (1, 2, 5, 6) D 3 mm 1 6 2 5 3 4 (3) G 2.85 mm	Original	Si3454ADV Si3454ADV-T1 Si3454ADV-T1--E3 S-40424--Rev. 15-Mar-04	PDF
Si3455ADV Abstract: Si3455ADV-T1 Contextual Info: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V −3.5 0.170 @ VGS = −4.5 V −2.7 TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G 3 4 2.85 mm Ordering Information: Si3455ADV-T1 Si3455ADV-T1—E3 (Lead Free)	Original	Si3455ADV Si3455ADV-T1 Si3455ADV-T1--E3 S-40424--Rev. 15-Mar-04	PDF
Si4348DY Contextual Info: Si4348DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Gen II Power MOSFET APPLICATIONS PRODUCT SUMMARY VDS (V) 30 D High-Side DC/DC Conversion − Notebook − Desktop − Server D Notebook Logic DC/DC, Low-Side ID (A) rDS(on) (W)	Original	Si4348DY Si4348DY--E3 Si4348DY-T1--E3 S-40438--Rev. 15-Mar-04	PDF
Si3442BDV Abstract: Si3442BDV-T1 72504 Contextual Info: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3	Original	Si3442BDV Si3442BDV-T1--E3 S-40424--Rev. 15-Mar-04 Si3442BDV-T1 72504	PDF
Si4463BDY-E3 Abstract: Si4463BDY Contextual Info: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View	Original	Si4463BDY Si4463BDY--E3 Si4463BDY-T1--E3 S-40433--Rev. 15-Mar-04 Si4463BDY-E3	PDF
Si3457BDV Abstract: Si3457BDV-T1 Contextual Info: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 0.100 @ VGS = −4.5 V −3.7 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3457BDV-T1	Original	Si3457BDV Si3457BDV-T1 Si3457BDV-T1--E3 S-40424--Rev. 15-Mar-04	PDF
Si6963BDQ Abstract: 7277-2 Contextual Info: Si6963BDQ Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −3.9 0.080 @ VGS = −2.5 V −3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6963BDQ G1 8 D2 7 S2 G2 6 S2 5 G2	Original	Si6963BDQ Si6963BDQ-T1--E3 S-40439--Rev. 15-Mar-04 7277-2	PDF
40410 Abstract: 40410 datasheet Si3465DV MARKING code 5C Contextual Info: Si3465DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.080 @ VGS = −10 V −4.0 0.170 @ VGS = −4.5 V −2.7 APPLICATIONS D Load Switch − Notebook PC − Game Machine	Original	Si3465DV Si3465DV-T1--E3 S-40410--Rev. 15-Mar-04 40410 40410 datasheet MARKING code 5C	PDF
Si3456BDV Abstract: Si3456BDV-T1 SI3456 Contextual Info: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.0 0.052 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm	Original	Si3456BDV Si3456BDV-T1--E3 S-404024--Rev. 15-Mar-04 Si3456BDV-T1 SI3456	PDF
SI4384DY-E3 Abstract: SI4384DY-T1-E3 Si4384DY Contextual Info: Si4384DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Gen II Power MOSFETS D PWM Optimized D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V 15 0.0125 @ VGS = 4.5 V 12 APPLICATIONS	Original	Si4384DY Si4384DY--E3 Si4384DY-T1--E3 S-40440--Rev. 15-Mar-04 SI4384DY-E3 SI4384DY-T1-E3	PDF

DIODE S404 Search Results

DIODE S404 Result Highlights (5)

DIODE S404 Datasheets Context Search

40427

Si3441BDV

SUD50N03-16P

136B

Si3447BDV

SUD50N03-16P

Si3447BDV

Si3441BDV

Si3441BDV

SUD50N03-16P

Si3447BDV

SUD70N03-06P

Si3454ADV

Si3455ADV

Si4348DY

Si3442BDV

Si4463BDY-E3

Si3457BDV

Si6963BDQ

40410

Si3456BDV

SI4384DY-E3