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    SI3456 Search Results

    SI3456 Datasheets (18)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3456BDV
    Vishay Siliconix MOSFETs Original PDF 63.87KB 5
    Si3456BDV SPICE Device Model
    Vishay N-Channel 30-V (D-S) MOSFET Original PDF 179.08KB 3
    SI3456BDV-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A 6-TSOP Original PDF 10
    Si3456BDV-T1-E3
    Vishay Telefunken Original PDF 65.45KB 5
    SI3456BDV-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A 6-TSOP Original PDF 10
    SI3456CDV-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP Original PDF 11
    SI3456CDV-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP Original PDF 11
    SI3456DDV-T1-BE3
    Vishay Siliconix N-CHANNEL 30-V (D-S) MOSFET Original PDF 246.25KB 11
    SI3456DDV-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.3A 6TSOP Original PDF 11
    SI3456DDV-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.3A 6-TSOP Original PDF 11
    SI3456DV
    Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF 128.5KB 5
    Si3456DV
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    Si3456DV
    Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF 60.56KB 4
    SI3456DV
    Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF 48.39KB 4
    SI3456DV_NF073
    Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF 128.49KB 5
    SI3456DV_NL
    Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF 128.49KB 5
    Si3456DV SPICE Device Model
    Vishay N-Channel 30-V (D-S) MOSFET Original PDF 200.18KB 3
    SI3456DV-T1
    Vishay Telefunken FET Transistor, N Channel, 1 VThreshold, ID ±5.1 A, TSOP, Tape and Reel Original PDF 46.81KB 4
    SF Impression Pixel

    SI3456 Price and Stock

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    Vishay Siliconix SI3456DDV-T1-GE3

    MOSFET N-CH 30V 6.3A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SI3456DDV-T1-GE3 Digi-Reel 75,261 1
    • 1 $0.45
    • 10 $0.33
    • 100 $0.17
    • 1000 $0.15
    • 10000 $0.15
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    SI3456DDV-T1-GE3 Cut Tape 75,261 1
    • 1 $0.45
    • 10 $0.33
    • 100 $0.17
    • 1000 $0.15
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    SI3456DDV-T1-GE3 Reel 75,000 3,000
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    • 10000 $0.09
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    New Advantage Corporation SI3456DDV-T1-GE3 69,000 1
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    Rochester Electronics LLC SI3456DV

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3456DV Bulk 27,130 1,366
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    Vishay Siliconix SI3456DDV-T1-E3

    MOSFET N-CH 30V 6.3A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SI3456DDV-T1-E3 Cut Tape 4,405 1
    • 1 $0.42
    • 10 $0.34
    • 100 $0.17
    • 1000 $0.14
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    SI3456DDV-T1-E3 Digi-Reel 4,405 1
    • 1 $0.42
    • 10 $0.34
    • 100 $0.17
    • 1000 $0.14
    • 10000 $0.14
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    SI3456DDV-T1-E3 Reel 3,000
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    New Advantage Corporation SI3456DDV-T1-E3 6,000 1
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    Vishay Siliconix SI3456DDV-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SI3456DDV-T1-BE3 Digi-Reel 4,387 1
    • 1 $0.42
    • 10 $0.34
    • 100 $0.18
    • 1000 $0.14
    • 10000 $0.14
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    SI3456DDV-T1-BE3 Cut Tape 4,387 1
    • 1 $0.42
    • 10 $0.34
    • 100 $0.18
    • 1000 $0.14
    • 10000 $0.14
    Buy Now
    SI3456DDV-T1-BE3 Reel 3,000
    • 1 -
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    • 10000 $0.09
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    Vishay Siliconix SI3456CDV-T1-E3

    MOSFET N-CH 30V 7.7A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3456CDV-T1-E3 Reel 3,000
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    SI3456 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si3456DV N-Channel PowerTrenchÒ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    Si3456DV NF073 NF073 PDF

    S-80735

    Abstract: Si3456CDV
    Contextual Info: SPICE Device Model Si3456CDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3456CDV 18-Jul-08 S-80735 PDF

    Contextual Info: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    Si3456BDV 2002/95/EC Si3456BDV-T1-E3 Si3456BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 5.1 0.065 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original
    Si3456DV Si3456DV-T1 08-Apr-05 PDF

    Si3456

    Abstract: Si3456DV
    Contextual Info: Si3456DV N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "5.1 0.065 @ VGS = 4.5 V "4.3 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original
    Si3456DV S-51274--Rev. 17-Feb-97 Si3456 PDF

    Contextual Info: Si3456DV N-Channel PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    Si3456DV PDF

    Si3456DDV

    Abstract: a1615
    Contextual Info: SPICE Device Model Si3456DDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si3456DDV 18-Jul-08 a1615 PDF

    Si3456BDV

    Abstract: Si3456BDV-T1-E3 Si3456BDV-T1-GE3
    Contextual Info: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    Si3456BDV 2002/95/EC Si3456BDV-T1-E3 Si3456BDV-T1-GE3 18-Jul-08 PDF

    Si3456DDV

    Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 Qg (Typ.) APPLICATIONS • Load Switch 2.8 nC • HDD


    Original
    Si3456DDV Si3456DDV-T1-E3 18-Jul-08 PDF

    Contextual Info: Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 5.1 0.065 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original
    Si3456DV Si3456DV-T1 S-531725--Rev. 18-Aug-03 PDF

    Si3456DDV

    Abstract: SI3456CDV Si3456CDV-T1-E3 Si3456CDV-T1-GE3 SI3456DDV-T1-GE3 si3456dd
    Contextual Info: Specification Comparison Vishay Siliconix Si3456DDV vs. Si3456CDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456DDV-T1-GE3 replaces Si3456CDV-T1-GE3 Si3456DDV-T1-E3 or Si3456DDV-T1-GE3 replaces Si3456CDV-T1-E3


    Original
    Si3456DDV Si3456CDV Si3456DDV-T1-GE3 Si3456CDV-T1-GE3 Si3456DDV-T1-E3 Si3456CDV-T1-E3 20-Jul-09 si3456dd PDF

    Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si3456BDV

    Abstract: Si3456BDV SPICE Device Model
    Contextual Info: SPICE Device Model Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3456BDV S-50383Rev. 21-Mar-05 Si3456BDV SPICE Device Model PDF

    Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.0 0.052 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original
    Si3456BDV Si3456BDV-T1--E3 18-Jul-08 PDF

    Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    A12S

    Abstract: Si3456DV
    Contextual Info: SPICE Device Model Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3456DV 07-May-01 A12S PDF

    4511 mosfet

    Abstract: 03-FEB-09 4511 AN609 Si3456DDV
    Contextual Info: Si3456DDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    Si3456DDV AN609, 03-Feb-09 4511 mosfet 03-FEB-09 4511 AN609 PDF

    68341

    Abstract: that 2159 AN609 Si3456CDV 32-1014
    Contextual Info: Si3456CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si3456CDV AN609 03-Jan-08 68341 that 2159 32-1014 PDF

    Si3456DV

    Abstract: Si3456DV-T1 1458R
    Contextual Info: Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 5.1 0.065 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original
    Si3456DV Si3456DV-T1 18-Jul-08 1458R PDF

    Si3456CDV

    Abstract: Si3456CDV-T1-E3 Si3456CDV-T1-GE3
    Contextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 18-Jul-08 PDF

    SI3456C

    Contextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI3456C PDF