DIODE S426 Search Results

S426GE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600

S426IC

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000

S426DA

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 200

diode

Abstract: S426IH
Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000

S426IE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Io Max@55 Max@100 deg C deg C (Amps) (Amps) IFSM (Amps) 25 Vf

Contextual Info: f 97 12 •V/- Î5 Photon Coupled Isolator H11B255 SYMBOL Ga As In fra re d Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H11B255 consists of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington amplifier in a dual in-line package. This device is

Contextual Info: 3875081 G E SOLID 0 1E STATE D 19652 Optoelectronic S p e cificatio n s_ HARRI S SEMICOND SECTOR 37E D I 4302271 • HAS 0027114 1 If 4 13 Infrared Emitter F5F1 Gallium Arsenide Infrared — Emitting Diode T he G E Solid S tate F 5 F I is a G allium -A rsenide, infrared em itting diode which

Contextual Info: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide

Contextual Info: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier

Contextual Info: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide

Contextual Info: 3875081 G E SOLID STATE 01E optoelectronic S p e c ific a tio n s_ HARRIS SEMICOND SECTOR 19734 T W i-SS 37E D 43G2271 0 D 2 7 n t IH A S 7 Photon Coupled Isolator H11G3 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected P hototransistor

Contextual Info: HARRIS SEMICOND SECTOR 37E D 4302571 Ü Ü S V at t . [HAS 2 Optoelectronic Specifications_ T -W I-7 Í M atched Emitter-Detector Pair H23L1 •vu. A B Bi The G E Solid State H23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a

CNY47/47A

Contextual Info: 3875081 G E S O L ID STATE Optoelectronic Specifications_ H A R R IS S EfllC O N D S EC T O R 01E 3?E D B 4302571 19846 D G0e73afl T-W I • HAS 3 Photon Coupled Isolator C N Y47,CN Y47A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor INCH

Contextual Info: 3875081 G E SO LID 01E STATE 19648 D Optoelectronic Specifications -• -t c q t -t è H A RR IS SEM-ICOND S E C T O R 37E D 43 0 5 27 1 G G 2 7 1 1 0 4 ■ HAS Infrared Emitter FSDl,F5D2,F5D3,F5E1, F5E2,F5E3 Gallium Aluminum Arsenide Infrared — Emitting Diode

Contextual Info: 3875081 G E SOLID STATE 01E 19738 Optoelectronic Sp e c ific atio n s_ H A R R IS S EM IC O N D 37E SECTOR D 430S271 DD272G G S 0 c -T - 4 1 -8 7 Photo Coupled Isolator H11J1- H11J5 Ga As Infrared Em itting Diode & Light Activated T riac Driver The GE Solid State HI IJ series consists of a gallium arsenide infrared

I22R

Abstract: IRFF122R IRFF120R IRFF121R IRFF123R IRFFI22R
Contextual Info: Rugged Power MOSFETs_ IRFF120R, IRFF121R, IRFFI22R, IRFF123R File Num ber 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ib s o n = 0.300 and 0.400 N-CHANNEL ENH ANCEM ENT M ODE Feature«: • Single pulse avalanche energy rated

irf transistors

Abstract: irf032 721a GF2D05 IRFD320R IRFD321R IRFD322R IRFD323R 721R IRF 100A
Contextual Info: Rugged Power M O SFETs_ IRFD320R, IRFD321R, IRFD322R, IRFD323R File Number 2040 Avalanche Energy Rated N-Channel Power MOSFETs 0.5A and 0.4A, 350V-400V rDS on = 1.80 and 2.50 N -C H A N N E L E N H A N C E M E N T M O D E Features:

F421

Abstract: IRFF420R IRFF421R IRFF422R IRFF423R nanosecond pulse generator avalanche pulse generator
Contextual Info: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Number 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1.4 A a n d 1.6 A , 4 5 0 V -5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • Single pulse avalanche energy rated

IRFP250R

Abstract: irfp 250r IRFP251R p250a IRFP252R IRFP253R IRFP25
Contextual Info: Rugged Power MOSFETs_ IRFP250R, IRFP251R, IRFP252R, IRFP253R File Num ber 2016 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■

TRANSISTOR CD 2897

Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
Contextual Info: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared

IRF830R

Abstract: diod 200 ampere 600 volt IRF831R IRF832R IRF833R IRF83Q
Contextual Info: _Rugged Power MOSFETs File Number 2021 IRF830R, IRF831R, IRF832R, IRF833R Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 4.5A, 450V-500V rDs on = 1,5Q and 2.00 N -C H A N N E L E N H A N C E M E N T M O D E D Features: • Single pulse avalanche energy rated

Contextual Info: HARRIS SEMICOND 3 7E SECTOR D 4305271 □0273G0 I HAS =1 Optoelectronic Specifications _ Photon Coupled Isolator CNY33 Ga A s Infrared Em itting D iode & N PN S ilicon High V o ltage Photo-Transistor The G E Solid State CNY33 is a gallium arsenide, infrared emitting

Contextual Info: HARRIS SENICOND SECTOR 37E » 4305E71 005715b b • HAS O p to ele c tro n ic S p e c ific a tio n s -T ‘- V / 'Í 3 Photon Coupled Isolator H11A520-H11A550 -H11A5100. Ga As Infrared E m itting D iode & NPN Silicon Photo-T ransistor The G E Solid State H 11A520, H 11A550 and H 11A 5100 consist of a

IRF140R

Abstract: IRF141R IRF142R IRF143R
Contextual Info: .Rugged Power MOSFETs File Number 2001 IRF140R, IRF141R IRF142R, IRF143R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0.085fl and 0.110 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited