IRF831R Search Results

IRF830R

Abstract: diod 200 ampere 600 volt IRF831R IRF832R IRF833R IRF83Q
Contextual Info: _Rugged Power MOSFETs File Number 2021 IRF830R, IRF831R, IRF832R, IRF833R Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 4.5A, 450V-500V rDs on = 1,5Q and 2.00 N -C H A N N E L E N H A N C E M E N T M O D E D Features: • Single pulse avalanche energy rated

Contextual Info: IRF831R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)4.5# I(DM) Max. (A) Pulsed I(D)3.0# @Temp (øC)100 IDM Max (@25øC Amb)18# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55#

1rf830

Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Contextual Info: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350

LP1800

Abstract: Transistors IRF 830R IRF830R ltsj
Contextual Info: m H A R R I S IR F 8 3 0 /8 3 1 /8 3 2 /8 3 3 IR F 8 3 0 R /8 3 1 R /8 3 2 R /8 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features • T 0 -2 2 0 A B 4.0 A and 4.SA, 4S 0V - 5 0 0V T O P VIEW • ro s o n = 1 .5 il and 2 .0 f i

Contextual Info: • M3D5E71 00S40LÖ EB3 ■ HAS IRF830/Q31/832/833 IRF830R/831R/832R/833R gì HARRIS N-Channel Power M O SFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B T O P VIEW • 4.0A and 4.5A, 450V - 500V • rDS °n = 1-5ii and 2 .0 0 • Single Pulse Avalanche Energy Rated*