DIODE S524 Search Results

Contextual Info: OD-S524 Series Pigtail Cords for SMT Modules NEC's new surface-mount, low-cost laser diode module and photo diode module called SMT module are designed for use in fiber optic communications applications such as ATM, FITL and SONET. OD-S524 series can be detached from SMT module for enhanced flexibility.

OD-S524-FCPC-MM

Abstract: 6 pin smt diode OD-S524-SC-MM
Contextual Info: OD-S524 Series Pigtail Cords for SMT Modules NEC's new surface-mount, low-cost laser diode module and photo diode module called SMT module are designed for use in fiber optic communications applications such as ATM, FITL and SONET. OD-S524 series can be detached from SMT module for enhanced flexibility.

Contextual Info: Dec. 1995 Pigtail Cords for SMT Modules OD-S524 Series Description NEC's new surface-mount, low-cost laser diode module and photo diode module (called SMT module) are designed for use in fiber optic communications applications such as ATM, FITL and SONET. This pigtail can be detached from SMT module for enhanced flexibility.

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

4535A

Contextual Info: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: QS5244 Ô Preliminary Low Skew CMOS 8-Bit Buffers/Line Drivers Q S5244 F E A T U R E S /B E N E F IT S • • • • • 1,2ns on-chip skew opposite trans. 1,5ns skew between chips CMOS power levels: <7.5 mW static Available in PDIP, ZIP, SOIC, QSOP, CERDIP

TIS25

Abstract: KS52 KS524505 tis25c S-10 S-11 S-12
Contextual Info: KS524505 Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lQ D B iH n C ftO n Transistor Module 50 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

t333b

Abstract: ks52
Contextual Info: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax

Contextual Info: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

TN0200T

Abstract: MOSFET n0 sot-23 TN0200TS
Contextual Info: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features

Contextual Info: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) Top View G rDS(on) (W) TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 20 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236

TP0101T

Abstract: TP0101TS
Contextual Info: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 Top View G 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236

TN0200T

Abstract: TN0200TS
Contextual Info: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features

Si2303BDS

Abstract: Si2303BDS-T1
Contextual Info: Si2303BDS Vishay Siliconix P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.200 at VGS = –10 V –1.64 0.380 at VGS = –4.5 V –1.0 VDS (V) –30 30 * TO-236 (SOT-23) G 1 S 2 3 D Top View Si2303BDS (L3)* *Marking Code Ordering Information:

SIE800DF

Contextual Info: SPICE Device Model SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4931DY

Contextual Info: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4955DY

Contextual Info: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiE800DF

Contextual Info: SPICE Device Model SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4931DY

Contextual Info: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74141

Abstract: si4563dy 7414-1
Contextual Info: SPICE Device Model Si4563DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TN0200T

Contextual Info: Tem ic TN0200T/TS Semiconductors N-Channel Enhancement-Mode MOSFET Product Summary I d A r DS(on) (Q ) TN0200T TN0200TS 0.4 @ VGs = 4.5 V 0.73 1.2 0.5 @ Vos = 2.5 V 0.65 1.1 V d s (V ) 20 Features Benefits • • • • • • • • • • Low On-Resistance: 0.29 Q

tn0201t

Contextual Info: Temic TN0201T Semi conduct or s N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS M i n (V ) 20 rDS(on) M a x ( Q ) V c a w tV ) I d (A) 1.0 to 3.0 0.39 1.0 @ V o s =10 v 1.4 @ V GS - 4 . 5 V Features Benefits Applications • • • •

TN2010T

Contextual Info: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

ic ds 2020

Contextual Info: Tem ic TPOIOIT/TS S e m i c o n d u c t o r s P-Channel Enchancement-Mode MOSFET Product Summary I d A V d s (V ) TP0101T *DS(on) (Q ) TP0101T (PO)* TP0101TS (PS)* ♦Marking Code for TO-236 TP0101TS D 0.65 @ VGS = -4.5 V -0.6 -1.0 0.85 @ VGS = -2.5 V -0.5