samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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4535A
Abstract: No abstract text available
Text: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4814BDY
18-Jul-08
4535A
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Untitled
Abstract: No abstract text available
Text: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET
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Si8435DB
08-Apr-05
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TN0200T
Abstract: MOSFET n0 sot-23 TN0200TS
Text: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features
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TN0200T/TS
O-236
OT-23)
TN0200T
TN0200TS
S-52426--Rev.
14-Apr-97
TN0200T
MOSFET n0 sot-23
TN0200TS
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Untitled
Abstract: No abstract text available
Text: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) Top View G rDS(on) (W) TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 20 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236
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TP0101T/TS
O-236
OT-23)
TP0101T
TP0101TS
S-52430--Rev.
05-May-97
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TP0101T
Abstract: TP0101TS
Text: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 Top View G 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236
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TP0101T/TS
O-236
OT-23)
TP0101T
TP0101TS
S-52430--Rev.
05-May-97
TP0101T
TP0101TS
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TN0200T
Abstract: TN0200TS
Text: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features
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TN0200T/TS
O-236
OT-23)
TN0200T
TN0200TS
S-52426--Rev.
14-Apr-97
TN0200T
TN0200TS
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Si2303BDS
Abstract: Si2303BDS-T1
Text: Si2303BDS Vishay Siliconix P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.200 at VGS = –10 V –1.64 0.380 at VGS = –4.5 V –1.0 VDS (V) –30 30 * TO-236 (SOT-23) G 1 S 2 3 D Top View Si2303BDS (L3)* *Marking Code Ordering Information:
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Si2303BDS
O-236
OT-23)
Si2303BDS-T1
08-Apr-05
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74146
Abstract: Si8435DB
Text: SPICE Device Model Si8435DB Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si8435DB
S-52479Rev.
12-Dec-05
74146
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SIE800DF
Abstract: No abstract text available
Text: SPICE Device Model SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE800DF
to10-V
S-52446Rev.
28-Nov-05
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Si4931DY
Abstract: No abstract text available
Text: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4931DY
S-52446Rev.
28-Nov-05
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Si4955DY
Abstract: No abstract text available
Text: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4955DY
0-V/20-V
S-52446Rev.
28-Nov-05
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SiE800DF
Abstract: No abstract text available
Text: SPICE Device Model SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE800DF
to10-V
18-Jul-08
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Si4931DY
Abstract: No abstract text available
Text: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4931DY
18-Jul-08
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TN2010T
Abstract: No abstract text available
Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
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TN2010T
O-236
OT-23)
S-52426--Rev.
14-Apr-97
TN2010T
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Untitled
Abstract: No abstract text available
Text: OD-S524 Series Pigtail Cords for SMT Modules NEC's new surface-mount, low-cost laser diode module and photo diode module called SMT module are designed for use in fiber optic communications applications such as ATM, FITL and SONET. OD-S524 series can be detached from SMT module for enhanced flexibility.
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OD-S524
OD-S524-SCG-MM,
OD-S524-SC-MM
OD-S524-FCPC-SM,
OD-S524-FCPC-MM
OD-S524-ST-SM,
OD-S524-ST-MM
OD-S524
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OD-S524-FCPC-MM
Abstract: 6 pin smt diode OD-S524-SC-MM
Text: OD-S524 Series Pigtail Cords for SMT Modules NEC's new surface-mount, low-cost laser diode module and photo diode module called SMT module are designed for use in fiber optic communications applications such as ATM, FITL and SONET. OD-S524 series can be detached from SMT module for enhanced flexibility.
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OD-S524
OD-S524DIMENSION
OD-S524-SCG-SM,
OD-S524-SC-SM,
OD-S524-SCG-MM,
OD-S524-SC-MM
OD-S524-FCPC-SM,
OD-S524-FCPC-MM
OD-S524-FCPC-MM
6 pin smt diode
OD-S524-SC-MM
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Untitled
Abstract: No abstract text available
Text: Dec. 1995 Pigtail Cords for SMT Modules OD-S524 Series Description NEC's new surface-mount, low-cost laser diode module and photo diode module (called SMT module) are designed for use in fiber optic communications applications such as ATM, FITL and SONET. This pigtail can be detached from SMT module for enhanced flexibility.
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OD-S524
OD-S524-SCG-SM
OD-S524-SC-SM
OD-S524-FCPC-SM
OD-S524-ST-SM
OD-S524-SO-SM
OD-S524-FCPC-SM
OD-S524-ST-SM
OD-S524-D
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Untitled
Abstract: No abstract text available
Text: QS5244 Ô Preliminary Low Skew CMOS 8-Bit Buffers/Line Drivers Q S5244 F E A T U R E S /B E N E F IT S • • • • • 1,2ns on-chip skew opposite trans. 1,5ns skew between chips CMOS power levels: <7.5 mW static Available in PDIP, ZIP, SOIC, QSOP, CERDIP
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QS5244
S5244
QS5244
500i2
MDSL-00054-01
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TIS25
Abstract: KS52 KS524505 tis25c S-10 S-11 S-12
Text: KS524505 Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lQ D B iH n C ftO n Transistor Module 50 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS524505
Amperes/600
TIS25
KS52
KS524505
tis25c
S-10
S-11
S-12
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t333b
Abstract: ks52
Text: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax
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KS52450310
T-33-35
S52450310
S52450310
t333b
ks52
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TN0200T
Abstract: No abstract text available
Text: Tem ic TN0200T/TS Semiconductors N-Channel Enhancement-Mode MOSFET Product Summary I d A r DS(on) (Q ) TN0200T TN0200TS 0.4 @ VGs = 4.5 V 0.73 1.2 0.5 @ Vos = 2.5 V 0.65 1.1 V d s (V ) 20 Features Benefits • • • • • • • • • • Low On-Resistance: 0.29 Q
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TN0200T/TS
TN0200T
TN0200TS
O-236
S-52426--Rev.
14-Apr-97
TN0200T
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tn0201t
Abstract: No abstract text available
Text: Temic TN0201T Semi conduct or s N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS M i n (V ) 20 rDS(on) M a x ( Q ) V c a w tV ) I d (A) 1.0 to 3.0 0.39 1.0 @ V o s =10 v 1.4 @ V GS - 4 . 5 V Features Benefits Applications • • • •
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TN0201T
OT-23)
S-52426--Rev.
14-Apr-97
S-52426--
tn0201t
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ic ds 2020
Abstract: No abstract text available
Text: Tem ic TPOIOIT/TS S e m i c o n d u c t o r s P-Channel Enchancement-Mode MOSFET Product Summary I d A V d s (V ) TP0101T *DS(on) (Q ) TP0101T (PO)* TP0101TS (PS)* ♦Marking Code for TO-236 TP0101TS D 0.65 @ VGS = -4.5 V -0.6 -1.0 0.85 @ VGS = -2.5 V -0.5
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TP0101T
TP0101TS
TP0101T
TP0101TS
O-236
S-52430--Rev.
05-May-97
TP0101T/TS
ic ds 2020
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