DIODE S62 Search Results

Contextual Info: S6207 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 23nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: S6205 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 12A*1 18nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

B667

Abstract: CBVK741B019 FDB6676S FDP6676 FDP6676S FDP7060 Schottky diode TO220
Contextual Info: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

B667

Contextual Info: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: AflPLI FON IX INC 45E ] • Dfi0t.2B7 0D0D04? ? ■ AFX T P IN Diode Sw itches Listed by increasing Number of Throws and I.L.) ~ }$ Typ Freq. Range (MHz) Typ Max Isolation Typ Min TW M 5000 SPST 10-1500 1.0 1.5 50 TW D5002 SPDT 30-1000 0.9 1.8 TW D5001 SPOT

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

TRANSISTOR SE 135

Contextual Info: m m tE X KS624540 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 HiQh-B&td Single Darlington Transistor Module 400 Amperes/600 Volts O U T L IN E DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are

transistor k 4212

Abstract: of transistor C 4212 KS624540 K10-43 k1043 transistor 600 volts 60 amperes powerex ks62 diode S62
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/600 Volts O UTLINE DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are high power devices designed for

SC-70-6

Abstract: SiA911DJ SiA911DJ-T1-E3
Contextual Info: SiA911DJ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V - 4.5a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

74283 DATASHEET

Abstract: 74283 SI4472DY-T1-E3 SI4472DY
Contextual Info: Si4472DY Vishay Siliconix New Product N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 7.7 0.047 at VGS = 8 V 7.5 • Extremely Low Qgd WFET Technology for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested

c206a

Abstract: 74409 Si7904BDN-T1-E3
Contextual Info: Si7904BDN Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS RoHS COMPLIANT

SiB411DK

Abstract: SC75 SiB411DK-T1-E3
Contextual Info: SiB411DK Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V - 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

74275

Abstract: Si1450DH marking AH sot363
Contextual Info: Si1450DH Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A)a 0.047 at VGS = 4.5 V 4.0a 0.051 at VGS = 2.5 V 4.0a 0.058 at VGS = 1.8 V 4.0 a 4.0 a 0.069 at VGS = 1.5 V • TrenchFET Power MOSFET: 1.5 V Rated

Contextual Info: Si7302DN Vishay Siliconix New Product N-Channel 220-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS 9.1 nC APPLICATIONS COMPLIANT

741 LIGHT/DARK SENSOR

Abstract: Encoder photo IC phototransistor sensitive to red light light sensitive trigger circuit Application optical encoder module S10062 Photo resistor any type S6986 color sensitive PHOTO TRANSISTOR S9648-100
Contextual Info: SOLID STATE D I V I S I O N Selection Guide Aug. 2009 Photo IC and Related Products Sophisticated sensors integrated with photosensitive element and signal processing circuit PHOTO IC Photo IC and Related Products The photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal processing circuit into one package.

74285

Abstract: SC-89 SI1073X
Contextual Info: Si1073X Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 3.25 RoHS

Contextual Info: Si7904BDN Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS RoHS COMPLIANT

Contextual Info: Si8429DB Vishay Siliconix New Product P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 11.7 0.042 at VGS = - 2.5 V - 10.7 0.052 at VGS = - 1.8 V - 9.6 0.069 at VGS = - 1.5 V - 8.3 0.098 at VGS = - 1.2 V

Contextual Info: SUB60N04-15LT New Product Vishay Siliconix N-Channel 40-V D-S MOSFET With Sensing Diodes PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.012 @ VGS = 10 V "60a 0.015 @ VGS = 4.5 V "60 40 Notes: a. Package limited. FEATURES D D D D D D D D Temperature-Sense Diodes for Thermal Shutdown

SI4972DY-T1-E3

Abstract: 25DEC06
Contextual Info: Si4972DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel 1 Channel 2 FEATURES ID (A)a Qg (Typ) rDS(on) (Ω) 30 30 0.0145 at VGS = 10 V 10.8 0.0195 at VGS = 4.5 V 9.3 0.0265 at VGS = 10 V 7.2 0.036 at VGS = 4.5 V

list of P channel power mosfet

Contextual Info: SUD50NP04-62 Vishay Siliconix New Product Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 8 0.034 at VGS = 4.5 V 8 0.032 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) N-Channel P-Channel

SUP75N03-04

Abstract: SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263