DIODE SAF 26 Search Results

Contextual Info: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets

Laser Diode 1550 nm

Abstract: Fabry-Perot 1550 nm Quantum Photonics Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip laser diode bare chip 1550 Laser InP tunable lasers diode applications Fabry-Perot-Laser-Diode 1550 laser diode Laser diode Fabry-Perot
Contextual Info: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets

cce 7100

Abstract: 2579A
Contextual Info: Ordering number : ËN2579A I SAfÊYO SB50-18 N0.2579A Schottky B arrier Diode Twin Type • Cathode Common i 180V, 5A Rectifier A p p licatio n s • High frequency rectification (switching regulators, converters, choppers) F e a tu re s •Low forward voltage (Vp max = 0.85V)

murata 455KHz ceramic filter

Abstract: MURATA TRIPLEXER MuRata Gigafil murata 10.7Mhz ceramic filter murata 455khz filter murata vco mqr MURATA Duplexers MURATA TRIPLEXER wifi MURATA VCO Series murata LMSW
Contextual Info: Product Selector – by application The table below identifies the various Murata products listed in this brochure, which are suitable for use in some of the most popular RF applications. For other applications, please contact Anglia. RF APPLICATION WiFi Bluetooth

diode S455

Abstract: PTH451C diode smd LDB 107 VARISTOR NTC 10 D 208 MHF 318 FLYBACK RS360 pv34 PTH451 XMF S3 POT21
Contextual Info: Alphabetic Product Name Index A Acceleration S e n s o rs . AC Line F ilters . Active F ilters. Adjustm ent P otentiom eters. A n te n n a s .

Conventions used in Presenting Technical Data

Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
Contextual Info: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.

96N15P

Abstract: TEm 2411
Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions

Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions

Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFC 96N15P RDS on Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated trr = 150 V = 40 A Ω = 26 mΩ < 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

Contextual Info: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. M02069 3.3 or 5 Volt VCSEL/FP Laser Driver IC for Applications to 4.3 Gbps The M02069 is a highly integrated, programmable VCSEL driver intended for SFP/SFF modules to 4.3 Gbps. Using

M02080

Abstract: M02069-EVM BLM18HG471SN1 M02069-11
Contextual Info: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. M02069 3.3 or 5 Volt VCSEL/FP Laser Driver IC for Applications to 4.3 Gbps

2sa1692

Abstract: BMA150 2SC3807
Contextual Info: SAf/YO LARGE-POWER T 0 1 2 6 L P TRANSISTORS F e a t u r e s •ft No ☆ C o n v e n t i o n a l t y p e : 1 0 W ( T c = 25"C ) , T 0 - 1 2 6 L P : 2 0 W ( T c - 2 5 “ C ) Facilitates h i g h -density mounting. ☆ Replaceable screw hole makes for T0-220

H22B1

Abstract: H22B2 H22B3 SLOTTED OPTICAL SWITCH darlington st134 a1l75
Contextual Info: £ BPTOELECTBDHiCS SLOTTED OPTICAL SWITCH H22B1/2/3 PACKAGE DIMENSIONS —*| fai I— l_ L </>b 3 I bi S E C T IO N X - X LEAD PR O FILE SYMBOL MflUMETERS MIN, MAX. 10.7 A 11.0 3.2 3.0 A, .600 4>b .750 .50 NOM. bi 11.6 12.0 Dì 3.0 3.3 D, 6.9 7.5 fit e2 2,3

BDV64C

Abstract: BDV64B B0V64B 8DV64B
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW

Super-247 Package

Abstract: IRG4PSC71UD
Contextual Info: International IÖR Rectifier PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

Contextual Info: M02069 3.3 or 5 Volt VCSEL/FP Laser Driver IC for Applications to 4.3 Gbps Data Sheet Advance Information 02069-DSH-001-A 9/03 Information provided in this Data Sheet is ADVANCE and is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential

tda1062

Abstract: vogt inductors C7V5PH vogt spulen VOGT U3 vogt mo inductors vogt ende kaschke bobbins ATIC 107
Contextual Info: TDA1062 Monolithisch Integrierte Schaltung Monolithic integrated Circuit Anwendung: UKW -Eingangsteile fü r Netz- und Autoradios, Mischer, M odulatoren und phasenem pfindliche G le ich richte r bis ca. 200 MHz. Application: FM-Tuner fo r AC-line and car-radios, mixer, m odulator and

2SK831

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK831 DESCRIPTION The 2SK831 is N-channel MOS Field E ffe ct Power Transistor PACKAGE D IM E N SIO N S designed fo r switching power supplies, DC-DC converter. FEATURES in m illim e te rs inches

Contextual Info: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ! Q M 50E2Y/E3Y-H • lc • • • • Collector current. 50A VCEX Collector-emitter voltage.600V hFE DC current gain. 75

IXTK80N25

Abstract: 80N25 megamos
Contextual Info: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

UAA 1021

Abstract: UAA 267 1NBA
Contextual Info: ozoooe wei vv+ xel 'lal 96969s(we w+ :sdornf I gZ-V (eo)18+ xel LgvL-gzze 'lal :curced/ersv r ,Lgr-gzze(ed [s+ 'mlloN sggg-gL9(oog)xel 'lol 9922.99e(008) :ecrrotlrvtluoN 'cut'ulto3-v/w lnoqlM aoupqg o11ce[qngsuoueqllcedg 'llnJJrJuoll?zlrBaull? lnoqll^a pauSlsap aq u?f, slInf,JIJ gf,ns sos€J r(uzur ur pue sJaunu

50N20P

Contextual Info: PolarHTTM Power MOSFET IXTQ 50N20P IXTA 50N20P IXTP 50N20P = 200 V = 50 A Ω = 60 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ