tms44c256
Abstract: SMALL SIGNAL SCHOTTKY DIODE "Schottky Diode" diode arrays line following CIRCUIT Schottky Diode 74AC11240 SN74S1050 TMS4256
Text: EB194E Schottky Diode Arrays EB194E SCHOTTKY DIODE ARRAYS Author: Eilhard Haseloff Date: October 10th, 1990 Rev.: A Revised August 30th, 1995 1 Applikationslabor EB194E Schottky Diode Arrays The trend towards faster and faster systems means that the circuit designer has to
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EB194E
tms44c256
SMALL SIGNAL SCHOTTKY DIODE
"Schottky Diode"
diode arrays
line following CIRCUIT
Schottky Diode
74AC11240
SN74S1050
TMS4256
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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TM1102
Abstract: Schottky diode Die
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module Product specification File under Discrete Semiconductors, SC01 1996 May 09 Philips Semiconductors Product specification PNP transistor/Schottky-diode module
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M3D087
PZTM1102
OT223
PZTM1101.
TM1102
Schottky diode Die
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tm1101
Abstract: schottkydiode schottky-diode schottky transistor npn
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance
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M3D087
PZTM1101
OT223
PZTM1102.
MAM236
tm1101
schottkydiode
schottky-diode
schottky transistor npn
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MCH5702
Abstract: MCH6201 SBS006
Text: Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating
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ENN7076
MCH5702
MCH5702
MCH6201
SBS006,
MCH5702]
SBS006
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A
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ZXTNS618MC
ZX3CDBS1M832
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KDR411S
Abstract: KTA1535T KTX512T
Text: KTX512T SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE TECHNICAL DATA DC/DC CONVERTER APPLICATIONS. FEATURES E K Composite type with a PNP transistor and a Schottky barrier diode 1 6 G 2 5 G contained in one package facilitating high-density mounting.
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KTX512T
KTA1535T
KDR411S,
KTX512T
500mA
KDR411S
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common collector PNP
Abstract: KDR701S KTA1532T KTX511T
Text: KTX511T SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE TECHNICAL DATA DC/DC CONVERTER APPLICATIONS. FEATURES E K Composite type with a PNP transistor and a Schottky barrier diode 1 6 G 2 5 G contained in one package facilitating high-density mounting.
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KTX511T
KTA1532T
KDR701S,
KTX511T
100mA
common collector PNP
KDR701S
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MCH6101
Abstract: MCH6702 SBS006 TA-3025
Text: Ordering number : ENN6684A MCH6702 PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode MCH6702 DC/DC Converter Applications unit : mm 2191A 0.25 [MCH6702] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 • Composite type with a PNP transistor and a Schottky barrier diode contained in one
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ENN6684A
MCH6702
MCH6702]
MCH6702
MCH6101
SBS006,
SBS006
TA-3025
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Untitled
Abstract: No abstract text available
Text: L6210 Dual Schottky diode bridge Features • Monolithic array of eight Schottky diodes ■ High efficiency ■ 4 A peak current ■ Low forward voltage ■ Fast recovery ■ Time two separated diode bridges s ct u d o Description let The L6210 is a monolithic IC containing eight
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L6210
L6210
E-L6210
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A1 dual diode
Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
Text: ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD3S1M832
500mV
A1 dual diode
Schottky Diode 40V 5A dual
MLP832
ZX3CD3S1M832
ZX3CD3S1M832TA
ZX3CD3S1M832TC
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A1 dual diode
Abstract: MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
Text: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD2S1M832
500mV
A1 dual diode
MLP832
ZX3CD2S1M832
ZX3CD2S1M832TA
ZX3CD2S1M832TC
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MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
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MLP832
Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC 0001M10
Text: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD1S1M832
500mV
MLP832
ZX3CD1S1M832
ZX3CD1S1M832TA
ZX3CD1S1M832TC
0001M10
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MLP832
Abstract: ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
Text: ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD3S1M832
500mV
MLP832
ZX3CD3S1M832
ZX3CD3S1M832TA
ZX3CD3S1M832TC
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating
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EN6007
CPH6701
CPH670I
CPH3106
CPH6701]
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marking PA
Abstract: CPH3106 CPH6701 "marking PA"
Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.
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ENN6007A
CPH6701
CPH6701
CPH3106
SBS001,
CPH6701]
marking PA
"marking PA"
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6091 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5702 DC/DC Converter Applications Features Package Dimensions • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating
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ENN6091
CPH5702
CPH5702
CPH3209
SB07-03C,
CPH5702]
STbS200
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.
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FP303
2SD1623
SB05-05CP,
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marking JB SCHOTTKY BARRIER DIODE
Abstract: No abstract text available
Text: Ordering number: EN 3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC/DC Converter Applications F eatures • Composite type with a PNP transistor and a Schottky barrier diode contained in one packge, facilitating high-density mounting.
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FP103
FP103
2SB1121
SB07-03C,
250mm2X
100mA
70/iF
-20lB
1M20l82"
marking JB SCHOTTKY BARRIER DIODE
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marking 202
Abstract: fp104
Text: Ordering number : E N 4655 FP104 No. 4655 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,
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FP104
FP104
2SA1729
SB05-05CP
250mm2
100mA
marking 202
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EN4539
Abstract: SB0703C
Text: I Ordering number:EN4539 _ FP301 TR : NPN Epitaxial Planar Silicon Transistor No.4539 SMÊYO SBD : Schottky B arrier Diode i DC/DC Converter Applications F eatures • Composite type with 2 devices NPN transistor and Schottky barrier diode contained in one package,
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EN4539
FP301
2SD1621
SB07-03C
250mm2X
EN4539
SB0703C
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6092 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5703 I S A ft Y D l DC/DC Converter Applications Features Package Dimensions •Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating
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ENN6092
CPH5703
CPH5703
CPH3205
SB05-05CP,
CPH5703]
600mm2x0
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN6684 PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. • The CPH6702 consists o f two chips which are
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ENN6684
CPH6702
CPH6101
SBS006,
MCH6702]
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