DIODE SEMIKRON 103 Search Results

Contextual Info: 51E D • 613bb71 000335^ 3hfi ■ s T k G SEMIKRON INC V rsm V rrm dv/ V drm dt cr V V - SEMIPACK 1 Thyristor/ Diode Modules Itr m s (maximum value for continuous operation) 95 A ITAV (sin. 180; Tease = 74 °C) 60 A V/(.is 500 400 500 SKKH 56/04 D - 700

Contextual Info: seMIKROn zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 240 A 270 A 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C) SKKT SKKT SKKH SKKH V drm dt)cr 240 A 270 A Itav (sin. 180, Tcase —. . .)

IEC192-2

Abstract: SKMD200E TBA80c SKKD50E04 SKKD50E semikron skmd 100
Contextual Info: SIE D • Ö13bb71 GODBMSS Ihh « S E K G s e m ik r d n ~SEMIKRON INC V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180;Tease = 85°C; 50 Hz) 207 A 48,5 A Ultrafast Epitaxial Diode Modules SEMIPACK 1 SKKD 50 E SKND 50 E

33B3 diode

Abstract: S/33B3 diode
Contextual Info: 51E D • Ô13bb71 DOÜ33b3 BISEK6 se MIKR dn SEMIKRON INC V V 125 A ITAV sin. 180; Tease = 78 °C 80 A V/ns - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D SKKH 72/08 D LO 700 SEMIPACK 1 Thyristor/ Diode Modules It r m s (maximum value for continuous operation)

Contextual Info: SEMIKRON zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 125 A V V V/|xs 700 600 500 SKKT 71/06 D 900 800 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 78 °C) 80 A - - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1> SKKH 71/08 D

Contextual Info: SEMIKRON V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180; T case = 85 °C; 50 Hz) 48,5 A 207 A Ultrafast Epitaxial Diode Modules 100 SKKD 50 E 01 SKND 50 E 01 SKMD 202 E 01 SKND 202 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02

Contextual Info: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )

300f diode

Abstract: semikron skke 360 300f diodes Diode semikron 103
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 450 A V IFAV (sin. 180; Tcase = 103 °C; 50 Hz) 290 A 1000 SKKE 600 F 10 1200 SKKE 600 F 12 Symbol Conditions IFDC IFDC IFDC Tcase = 92 °C Tamb = 45 °C; Rthha = 0,05 °C/W Tamb = 45 °C; Rthha = 0,15 °C/W

BC POWER MODULE

Abstract: diode F4 8G
Contextual Info: BAV 100.BAV 103 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9

skm 152 ga 123

Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040

Contextual Info: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56

Contextual Info: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150

Contextual Info: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V

tyco igbt

Abstract: tyco igbt 1200V V23990-K249-A-PM miniskiip 2 miniskiip igbt tyco pim miniskiip 29 igbt tyco
Contextual Info: V23990-K249-A-PM preliminary datasheet V23990-K249-A-01-14 MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Symbol Values max. Unit

tyco igbt

Abstract: V23990-K239-F-PM tyco igbt 1200V function of igbt igbt tyco "Power Switches" V23990-K239-F-01-14 break resistor in igbt igbt sixpack SEMIKRON
Contextual Info: V23990-K239-F-PM preliminary datasheet V23990-K239-F-01-14 MiniSKiiP 2nd Gen. SIXPACK Size 2, 1200V / 50A Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Values max. Unit VCE 1200 V 42 55 83 A W VGE 74 113 ±20 Tj”125°C VGE=15V VCC=900V

Contextual Info: BAV 100.BAV 103 *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9  )  ) & 2&  9  )  ) &     ) & *< : 8  6; : 5 1 #=2 # 8 /  #;? # /58 /58 /58   )    ) +  6; : 58 1

BAV 62

Contextual Info: BAV 100.BAV 103 *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9  )  ) & 2&  9  )  ) &     ) & *< : 8  6; : 5 1 #=2 # 8 /  #;? # /58 /58 /58   )    ) +  6; : 58 1

diode BY 028

Abstract: BAV 103 Diode semikron 103 diode bav
Contextual Info: BAV 100.BAV 103 *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9  )  ) & 2&  9  )  ) &     ) & *< : 8  6; : 5 1 #=2 # 8 /  #;? # /58 /58 /58   )    ) +  6; : 58 1

semikron IGBT

Abstract: semikron skiip 83
Contextual Info: SKiiP 11ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP 1 ICRM VGES Tj • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

Diode semikron 103

Abstract: semikron IGBT semikron skiip 81 AN 15 T semikron IGBT circuit
Contextual Info: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP 1 ICRM VGES Tj • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

Contextual Info: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 1 Tj = 175 °C ICRM VGES VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 12 A 12 A Ts = 70 °C 12 A 8 A 24

Contextual Info: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 1 Tj = 175 °C ICRM VGES VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 12 A 12 A Ts = 70 °C 12 A 8 A 24

smd C105

Abstract: diode smd d232 SEMIKRON dynamic test BOARD
Contextual Info: Board 2//3S SKYPER 42 R Absolute Maximum Ratings Symbol SKYPER Values Unit Vs Supply voltage primary 16 V IoutPEAK Output peak current 30 A IoutAVmax Output average current 150 mA fmax Max. switching frequency 100 kHz VCE Collector emitter voltage sense across

semikron IGBT

Abstract: miniskiip 29
Contextual Info: SKiiP 24ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP 2 ICRM VGES Tj • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections