DIODE SG 38 Search Results

ESM3030DV

Contextual Info: SG S-TH O M SO N RülDigœilLIg'iriûiDeS ESM3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT

ESM4045DV

Contextual Info: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

SMD MARKING CODE sg

Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Contextual Info: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top

220v 25a diode bridge

Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Contextual Info: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A

220v 25a diode bridge

Contextual Info: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5

Schaffner IU 1237

Abstract: Schaffner 1237 NSG506C 7R2R23
Contextual Info: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS

motorola opto

Abstract: 1N914 MMCFD914 38192
Contextual Info: 34 MOTOROLA SG iDIODES /OP TO l ¿T|h3t,7ESS GDBflna 4 T " 6367255 M O T O R O L A SC DIODES/OPTO 34C 38192 MMCFD914 FLIP-CHIP SW ITCHING DIO DE F lip -C h ip diode for high-speed switching applications with performance similar to the 1N914. Primary Electrical Features:

Diode MARKING S37

Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Contextual Info: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

sgs25D

Contextual Info: 3ÜE V • TTE' ÌSB? D0 3GbS b T ■ r r 7 SGS-THOMSON ^ 7 # r IL U m « ! SG S25DA080D S G S-THOMSON NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS * LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

Contextual Info: £ ÿ j SG S-TH O M SO N n0œilLI0ra [iïlBCi STTA1212D TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V (typ) ns (max) V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE

SGS25DB070D

Abstract: LC 0809 HALF BRIDGE NPN DARLINGTON POWER MODULE NPN DARLINGTON POWER MODULE sgs25D
Contextual Info: 3QE D • rz 7 ^ 7# TWSB? Q030bcJb D ■ SC S-TH O M SO N KilD DlH] [l[LiOU^(Q lD(gi s g S-THOMSON '" f ‘3> W 5 SG S25DB070D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS) . LOW Rth JUNCTION TO CASE > FREEWHEELING DIODE

S-40T

Abstract: SGS40TA045 SGS40
Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

SGS100D

Contextual Info: 3GE » m QD30bfl4 4 ^ _ ^ 3 3 - 3 > f Z 7 S G S -T H O M S O N ^ 7# SG S100DA020D " S G S-THOMSON NPN DARLINGTON POWER MODULE • POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE ■ FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

0809 al

Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Contextual Info: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE

diode sg 52

Abstract: mosfet 1200V 25A MOROCCO B 108 B
Contextual Info: £ y j SG S-TH O M SO N TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V (typ) 60ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

NPN DARLINGTON POWER MODULE

Abstract: SGS50DB040D 9120 mosfet SGS50D
Contextual Info: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

G10 zener diode

Abstract: "RCA Solid State thyristor SGT03U13 SGT06U13 SGT23U13 Surgector dw0t
Contextual Info: G E SOLI» STATE Gl 3875081 G E SOLID STATE ’" D e | 3fl750àl0Q17fa34 ' 0 ÏÊT 17634 T -K '1 3 ' D - S U R G E C T O R s

SG 21 DIODE SMD

Abstract: diode sg 36 SQ2014 14104BEA 14103BEA SG2023
Contextual Info: SG2000 SERIES 5 IL IC D N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEA TU RES The SG 2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in

diode sg 28

Abstract: SG 21 DIODE SG DIODE diode sg 5 BL0508-09-73
Contextual Info: 22mm x 22mm LED CLUSTER Part Number: BL0508-09-73 SUPER BRIGHT RED SUPER BRIGHT GREEN Features Description HIGH VISIBILITY. The Super Bright Red source color devices are made EMITTING COLOR: SUPER BRIGHT RED AND SUPER BRIGHT with Gallium Aluminum Arsenide Red Light Emitting

SG DIODE

Contextual Info: 22mm x 22mm LED CLUSTER BL0508-09-73 Features SUPER BRIGHT RED SUPER BRIGHT GREEN Description HIGH VISIBILITY. The Super Bright Red source color devices are made EMITTING COLOR: SUPER BRIGHT RED AND SUPER BRIGHT with Gallium Aluminum Arsenide Red Light Emitting

SG DIODE

Abstract: diode Sr BL0508-09-73 5mm LIGHT EMITTING DIODE SG 21 DIODE
Contextual Info: 21.9mm x 21.9mm LED CLUSTER BL0508-09-73 Features Description !HIGH VISIBILITY. !EMITTING COLOR: ! NO. The Super Bright Red source color devices are made HYPER RED. OF BUILT-IN 5mm LED LAMPS: Super Brihgt Red 3 Pcs,Super Bright Green 6 Pcs. !WATERPROOF PACKAGE WITH HOOD SUITABLE