SG2000 Search Results

300a 1000v thyristor

Abstract: sg2000 thyristor 450A
Contextual Info: SG2000 R,U,W,EX 24 TOSHIBA GATE TURN-OFF THYRISTOR SG2000 (R, U, W, EXI 24 (SG2000R24) U nit in mm CHOPPER, INVERTER APPLICATION • Repetitive Peak Off-State Voltage : Vd r m =1300, 1600, 1800, 2500V • R.M.S On-State Current • Peak Turn-Off Current • Critical Rate of Rise of On-State Current

Contextual Info: TOSHIBA SG2000R24, SG2000U24 SG2000W24, SG2000EX24 Unit in mm Chopper, Inverter Application 2 - ¡*3.S±0.2 DEPTH • Repetitive Peak Off-State Voltage: v drm= • R.M.S. On-State Current: k RMS =1 0 5 0 A • Peak Turn-Off Current: 130°. 1600, 1800, 2500V

Contextual Info: TOSHIBA LOW SNUBBERTYPE SG2000EX26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: V DRM = 2 5 0 0 V Note 1. • R.M.S. On-State Current: h (RMS = • Peak Turn-Off Current: 'tg q m = 2000A • Critical Rate of Rise of On-State Current:

smd DA RN

Contextual Info: SG2000 SERIES 5IUC0N HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require

4A2C

Abstract: SG2000EX21
Contextual Info: - 86 - 2 * T-36 I3-I20EIA SG2000EX21 2500V. 1000A *2 i?cx=10Q •*£*& *1 SG2000EX21 .ill ^7 Vrrm Vdrm Jtqrm /tîkwo I tsm X+'<[p]fè, R ,= 10Q, C,= 6//F di/dt POFM PoRM PoFhW) Va RM Iti h’M Tj T« k 250 ( V d = ï/2 V drm, I g = 20A, ¿r^ljus, / = 50Hz)

SG2000GXH26

Contextual Info: TO SH IBA TENTATIVE SG2000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION LOW SNUBBER TYPE SG2000GXH26 Repetitive Peak Off-State Voltage : V d r m = 4500 V Note 1 R.M.S On-State Current : IT (RMS) = 1(>00 A (Tf = 76°C) Peak Turn-Off Current : It GQM = 2000 A

Contextual Info: SG2000 SERIES S IL IC O N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR INTEG RATED C IRCUITS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in

Contextual Info: SG2000 SERIES SILICON GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR IN T E G R A T E D C IR C U IT S DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in

M2000-A

Abstract: M2000A sg2000fxf21
Contextual Info: GATE TURN-OFF THYRISTOR SG2000 FXF,GXH 21 T E N T A T I V E DATA DC SWITCH, INVERTER APPLICATION Unit Re p e t i t i v e Peak O f f - S t a t e V o l t a g e Re p e t i t i v e Peak R.M.S O n - S t a t e Peak T u r n - O f f Critic al V[)rm= 33 00, A500V V rrm= 3 3 0 0 V , A500V

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SG2000R24, SG2000U24 SG2000W24, SG2000EX24 SEMICONDUCTOR T O SH IB A TECHNICAL DATA SG2000R24 CHOPPER, INVERTER APPLICATION U nit in mm 2 - 0 3 .5 ± 0.2 • Repetitive Peak Off-State Voltage : VDr m = 1300, 1600, 1800, 2500V

14104BEA

Abstract: 14103BEA
Contextual Info: SG2000 SERIES hHFM TY M I C R O E L E C T R O N I C S HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require

Contextual Info: TOSHIBA LOW SNUBBERTYPE SG2000GXH26 PRELIMINARY Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 4500V Note 1. • R.M.S. On-State Current: IT ( R M S ) = • Peak Turn-Off Current: 1 000A (Tf=76°C) • Critical Rate of Rise of On-State Current:

SG2000EX26

Contextual Info: TO SH IBA SG2000EX26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • LOW SNUBBER TYPE SG2000EX26 Unit in mm Repetitive Peak Off-State Voltage : V d r m = 2500 V Note 1 R.M.S On-State Current : It (RMS) = 1050 A Peak Turn-Off Current

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SG2000R24, SG2000U24 SG2000W24, SG2000EX24 SEMICONDUCTOR T iìC U ID A • W W ■Il TECHNICAL DATA SG2000R24 CHOPPER, INVERTER APPLICATION U nit in mm 2- ^3.5 ±0.2 • Repetitive Peak Off-State Voltage : V d r m = !300, 1600, 1800, 2500V

14104BEA

Abstract: 14103BEA
Contextual Info: HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require

SG2000GXH26

Abstract: dsp800
Contextual Info: SEMICONDUCTOR TO SHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SG2000GXH26 LOW SNUBBER TYPE TENTATIVE DATA SG2000GXH26 Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : V d r m = 4500V (Note 1) R.M.S On-State Current

SG2007A

Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
Contextual Info: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available

DIODE S3V

Abstract: DIODE S3V 09 14103BEA M38510/14103BEA vcr 2020 soc 500ma SG2002 SG2000 m38510/14103 LF350
Contextual Info: SG2000 SERIES S IL IC D N HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS GENERAL LINEAR INTEG RATED C IR C U ITS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in

Contextual Info: SG2000EX21 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)2.5k V(RRM) Max. (V) I(T) Rated Maximum (A)1.0k² @Temp. (øC) (Test Condition) I(TSM) Max. (A) @ t(w) (s) (Test Condition) I(GT) Max. (A) V(GT) Max.(V) I(H) Max. (A) Holding Current I(D) Max. (A) Leakage Current

Contextual Info: SEMICONDUCTOR T O SH IB A TECHNICAL TOSHIBA GATE TURN-OFF THYRISTOR. SG2000EX26 DATA LOW SNUBBER TYPE SG2000EX26J INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : Vd r m = 2500V (Note 1 R.M.S On-State Current : It (RMS)= 1050A

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG2000GXH26 DATA LOW SNUBBER TYPE TENTATIVE DATA SG2000GXH26 INVERTER APPLICATION • • • • • U nit in mm Repetitive Peak Off-State Voltage : Vj}R]y[ = 4500V (Note 1) R.M.S On-State Current

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

Contextual Info: SG2000EX2KVRRM GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE TENTATIVE CHOPPER, DATA INVE RT ER APPL IC AT IO N . . Repetitive Peak Off-State . Repetitive Peak Reverse . R.M.S . Peak On-State Turn-Off U n i t i n mm 2 -0 5.2±0.2 V DRM=2500V Voltage v r r m =2000 v

Contextual Info: SG2000 Series HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require