DIODE SJ 4A Search Results

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV

Contextual Info: 7'J K Bridge Diode Single In-line Package O U TLIN E D IM E N S IO N S U4SBAD ^ 600V 4A B ill • S I S S I P A ^ ir - y •ULSSqJ UL File No.E 142422 M l FSM iS •S R B S •m m , OA, asæ •a«, tm. f a Mfcfàm RATING S Absolute Maximum Ratings m b Item

Contextual Info: 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

2SK3674-01L

Abstract: DIODE SJ 66
Contextual Info: 2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

Diode SJ 4A

Contextual Info: 2SK3521-01L,S,SJ FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3516-01L,S,SJ FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

Diode SJ 14

Contextual Info: 2SK3526-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

2SK3516-01L

Contextual Info: 2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

2SK3521-01L

Abstract: 2SK3521-01S 100V 100A mos fet
Contextual Info: 2SK3521-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

lvc16244

Contextual Info: HD7 4 LVC16244 16-bit Buffers / Line Drivers with 3-state Outputs HITACHI Description The HD74LVC16244 has sixteen line drivers with three state outputs in a 48 pin package. This device is a non inverting buffer and has two active low enables 1G to 4G . Each enable independently controls

Contextual Info: HD7 4 LVC16244A 16-bit Buffers / Line Drivers with 3-state Outputs HITACHI Description The HD74LVC16244A has sixteen line drivers with three state outputs in a 48 pin package. This device is a non inverting buffer and has two active low enables 1G to 4G . Each enable independently controls

IPP50R280Ce

Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Contextual Info: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not

TD62164AP

Contextual Info: TD62081AP/CP/F, TD62082AP/CP/F TD62083AP/CP/F, TD62084AP/CP/F INPUT CURRENT I jn mA I IN _ VIN INPUT VOLTAGE I IN _ VIN V ¡ N (V ) !q UT “ V CE(sat) 3.0 600 CURRENT I j N (mA) TD6 2 08 4A P/C P /F f r 2.0 400 V4à Y 4-/ / MAX. 1 .0 200 INPUT / M IN. /

4n05l

Abstract: FP4N05L
Contextual Info: RFP4N05L RFP4N06L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L^FET Package Features • 4A, 50V and 60V T O -2 2 0 A B TOP VIEW • 'D S iO N ) = ° - 8 f i DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

5r380ce

Abstract: 5r380
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R380CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPP50R380CE 1Description TO-220 tab

5R380CE

Abstract: IPD50R380CE
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPD50R380CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R380CE 1Description DPAK

UPL1J471MPH

Abstract: MIC4576BU
Contextual Info: MIC4576 Micrel, Inc. MIC4576 200kHz Simple 3A Buck Regulator General Description Features The MIC4576 is a series of easy to use fixed and adjustable BiCMOS step-down buck switch-mode voltage regulators. The 200kHz MIC4576 duplicates the pinout and function of

General Semiconductor diode marking UG

Contextual Info: Series MP 3-4Amp • 120/240 Vac AC OUTPUT • 60 Vdc (DC OUTPUT) • SIP • High Packaging Density • Compatible with 5, 15 & 24 Volt Logic Systems • Opto-Isolated 4000 Vrms • Zero Voltage Switching (AC Output) • Normally Closed (Form B) Available (DC Output)

Contextual Info: S M B Y W 0 4 -2 0 0 B YW 4200B _ HIGH EFFICIEN CY FAST RECO VERY DIODE MAIN PRODUCT CHARACTERISTICS I f a v 4A V rrm 200 V V f (max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS • ■ ■ ■ ■ SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE

Contextual Info: 2SK1925 AP A d v a n c e d P e rfo rm a n c e Series V dss = 6 0 0 V N Channel Power M OSFET 'I >4314 F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode ( tr r = 150ns). A b so lu te M axim um R a tin g s a tT a = 25°C

Contextual Info: 2SK1120 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt- M O S I I -5 2 S K 1 120 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS : Rd S(ON) 1 5 .9 M A X -

6626

Abstract: 1N6626 Ultrafast Recovery diode 12ns 1n6631
Contextual Info: 1N6626 thru 1N6631 Standard ULTRAFAST RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5077, REV. B.1 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV* SS Standard Recovery Rectifiers Qualified per MIL-PRF-19500/590

Diode SJ 49 a

Abstract: hSG1122 BT125
Contextual Info: 74ABT125 Quad Buffer with TRI-STATE< Outputs General Description The ’A BT1 25 contains four independent non-invertng buff­ ers with TR I-S T A T E outputs. Features • Guaranteed latchup protection ■ High impedance glitch free bus loading during entire

Contextual Info: 802 T S C 0 6 io a ’ O utline D raw ings SCHOTTKY BARRIER DIODE 4.5 9 1.32 2 1 t CD <3> II : Features 2 Irrf S $o aV r a i M f 5.oq 2.7 • fm n w s m Surface mount device • 1&VF JEDEC EIAJ Low VF Super high speed switching. Connection Diagram High reliability by planer design