DIODE SMD SJ 04 Search Results

65E6280

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6

65E6280

Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6

6r600e6

Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

6R600E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

6R600E6

Abstract: diode smd E6 to252 footprint wave soldering infineon marking TO-252 IPA60R600E6 IPD60R600E6 JESD22 marking code ll SMD Transistor Diode SMD SJ 19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet 2010-04-12 Rev. 2.0, 2.1, 2013-07-31 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

EL series SMD transistor

Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description

6R199P

Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

1N3064

Abstract: 54LS242
Contextual Info: M Military 54LS242 M O TO R O LA Quad Bus Transceivers With 3-State Outputs ELECTRICALLY TESTED PER: MIL-M-38510/32801 M • Hysteresis at Inputs to Improve Noise Margins • 2-Way Asynchronous Data Bus Communications • Input Clamp Diodes Limit High-Speed Termination Effects

Diode smd s6 85a

Contextual Info: SFH 900 SERIES SIEMENS Miniature Light Reflection Emitter/Sensor Dimensions in inches mm Plastic Flash (Between Leads) .177 (4.5) .189 (4.8)' 256 (6.5) 276 (7.0) .012(0.3) .020 (0.5) .039 (1 0 ) Max .059(1.5) _2 .071(1.8) FEATURES • • • • • •

54F378

Abstract: BXAJC JM38510 MOTOROLA
Contextual Info: g Military 54F378 M O TO R O LA Hex Parallel D Register With Enable MPO ELECTRICALLY TESTED PER: MIL-M-38510/34108 iiiliif The 54F378 is a 6-Bit register with a buffered common enable. This device is similar to the 'F174, but features the common Enable rather

gs 1117 ax

Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Contextual Info: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions

transistor 2N3906 smd 2A SOT23

Abstract: BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

B3A smd

Abstract: siemens relays
Contextual Info: SIEMENS HITFET B T S 1 34 D Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 42 V • Input Protection ESD On-state resistance f î DS(on) 50 m il • Thermal shutdown with Nominal load current fo(ISO) 3.3

Contextual Info: 3A, 3.3V Fixed Linear Regulator Description The CS-5203-3 linear regulator provides a 3.3V reference at 3A with an output voltage accuracy of ±1.5%. This regulator is intended for use as a post regulator and microprocessor supply. The fast loop response and low dropout

Contextual Info: SIEMENS HITFET B T S 118D Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 42 V • Input Protection ESD On-state resistance f î DS(on) 100 m il • Thermal shutdown with Nominal load current fo(ISO) 2.4

Diode SMD SJ 2B

Abstract: Diode SMD SJ 3B Diode SMD SJ 0A
Contextual Info: <8>MOTOROLA M ilita ry 54L S 1 5 3 Dual 4-ln p u t D ata S e le c to r/M u ltip le x e r w ith Enable MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/30902 The 54LS153 is a very high-speed Dual 4-input Multiplexer with common select inputs and individual enable inputs for each section. It

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

ic 5304 smd 8 pin

Abstract: Diode SMD SJ 36
Contextual Info: M MOTOROLA M ilitary 54LS242 Quad Bus TVansceivers With 3-State Outputs MPO ELECTRICALLY TESTED PER: MIL-M-38510/32801 /////// The 54LS242 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses. • Hysteresis at Inputs to Improve Noise Margins

Contextual Info: M MOTOROLA M ilita ry 5 4 F 3 7 8 H e x P arallel D R eg ister W ith Enable MPO ELECTRICALLY TESTED PER: MIL-M-38510/34108 Ulfllt The 54F378 is a 6-Bit register with a buffered common enable. This device is similar to the 'F174, but features the common Enable rather

Contextual Info: M M M ilita ry 54L S 377 O T O R O L A D-Type Flip-Flop W ith Enable ELECTRICALLY TESTED PER: MIL-M-38510/32504 MPO IHflll The 54LS377 is an 8-bit register built using advanced Low Power Schottky technology. This register consists of eight D-type flip-flops with a

Contextual Info: g Military 54LS173 MOTOROLA 4-Bit D-Type Register With 3-State Outputs ELECTRICALLY TESTED PER: MPG54LS173 M PO The 54LS173 is a high-speed 4-bit Register featuring 3-state outputs for use in bus-organized systems. The clock is fully edge-triggered allowing