DIODE SS 16 Search Results

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KMJ-06 HIGH-SPEED SWITCHING USE FS5KMJ-06 + 4 * ' 4V DRIVE ' V d ss .60V . . 0.14£2 . 5A ' Id . ' Integrated Fast Recovery Diode TYP. .45ns V is o .

Contextual Info: SKKT 27, SKKT 27B, SKKH 27 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R BS I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N YSS UASS UBSS UTSS N VSS UCSS U]SS U@SS QJIN R CT I G*2)> UVSW J5 R VC XEH MZZJ CT[SV? MZZJ CT¥SV? MZZ$ CT[SV?

diode m1l

Abstract: M1L marking MA781
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA781 Silicon epitaxial planer type Unit : mm 0.28±0.05 1608 type SS-Mini type diode ● Surface mounting, enabling high-density mounting ● Fast t rr (reverse recovery time), optimum for high-frequency rectifi- 1 3

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5ASJ-2 HIGH-SPEED SWITCHING USE FS5ASJ-2 ' 4 V D R IV E ' V . .100V ' rDS ON (MAX) . .0.4Í2 ' Id . .5A ' Integrated Fast Recovery Diode (TYP.) d ss 80ns APPLICATION

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5AS-2 HIGH-SPEED SWITCHING USE FS5AS-2 ' 10V DRIVE ' V ' rDS ON (MAX) . d ss .1 o o v . 0.47Í2 . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 5 A 80ns APPLICATION

1N4465

Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
Contextual Info: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2ASJ-3 HIGH-SPEED SWITCHING USE FS2ASJ-3 # t ' 4 V D R IV E ' V . .150V ' rDS ON (MAX) . .0.75Í2 ' Id . .2 A ' Integrated Fast Recovery Diode (TYP.) d ss 65ns APPLICATION

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYR) .30V . 92mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 ' 4V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 75mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

1N3070

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi­ taxial diode with 1N3070 high-speed sw itching char­ acteristics. It has a typical breakdow n-voltage rating

diode OA-79

Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Contextual Info: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates

MA3S781

Abstract: MA781
Contextual Info: Schottky Barrier Diodes SBD MA3S781 (MA781) Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features 1.60 ± 0.1 0.80 ± 0.05 1 + 0.05 • 1608 type diode contained in the (SS-mini) package • Surface mounting, allowing high-density mounting

Contextual Info: PD- 91789 International IO R Rectifier PRELIMINARY IR F 7 3 2 4 D 1 FETKY MOSFET / Schottky Diode Co-packaged H EXFET Power M O SFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO -8 Footprint V d ss = -2 0 V R ü S o n = o . 1 8 £ 2

Contextual Info: APE-208-165A Z 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev. 1 Aug. 1995 Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time, (trr =3.5ns max) • Sm all g la ss p ackage (M H D ) en a b les easy

Contextual Info: OPTEK Product Bulletin OP166W April 1993 GaAs Plastic Infrared Emitting Diode Type OP166W DIMENSIONS ARE IN INCHES MILLIMETERS . 145 13.681 .02M 0.6A I g, .111510.381 Absolute Maximum Ratings (T a 25 ° C u n le ss otherwise noted) Wide irradiance pattern

Contextual Info: MA111 Band Switching Diodes MA2S077 Silicon epitaxial planer type Unit : mm For band switching 0.15 min. 0.15 min. +0.05 voltage dependence of diode capacity CD ● SS-Mini +0.05 ● Less 0.27–0.02 forward dynamic resistance rf 0.8±0.1 ● Low 0.27–0.02

h965

Abstract: in962 zener diode CH965 h985 in746 CH748 CH746 H983 CH749 CH747
Contextual Info: Electrical characteristics at 2 5 ° C u nle ss oth erw ise specified. VOLTAGE REGULATOR PLANAR DIODE CHIPS MICROSEMI TYPE NO. Note 1 & 5 CH4370 CH4371 CH4372 NOMINAL ZENER VOLTAGE Vz @ IZT (Note 2) VOLTS 2.4 2.7 3.0 ZENER MAXIMUM ZENER TEST CURRENT IMPEDANCE

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 5˚ • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD • SS-Mini type package, allowing downsizing of equipment and

Contextual Info: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS

Contextual Info: 37bflS22 0013477 b?b » P L S B w GEC PL E SS E Y SEMICONDUCTORS DC1542/46 SILICON SCHOTTKY J-BANO WAVEGUIDE MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

1N4148-1

Abstract: DDD321S HCR4148D HCR4148M HCR4148MTX
Contextual Info: OPTEK Product Bulletin HCR4148 September 1996 Surface Mount Switching Diode Types HCR4148D, HCR4148M, TX, TXV Features A bsolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • Constructed from ceram ic, metal, and g lass for rugged environm ents

1N5629a

Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Contextual Info: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

10160

Abstract: SW10CXC27C 200AD westcode ct
Contextual Info: lilESTCODE SEMICONDUCTORS 3TE D • 'H D'H SS D DD B Sb S B ■ UESB WESTCODE SEMICONDUCTORS ZZ «™ Capsule Rectifier Diode Consists of a diffused silicon elem ent mounted in an hermetic ceram ic cold welded capsule. Available in industry standard and