DIODE T 4512 H Search Results

Contextual Info: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 E72873 Features IGBTs Symbol

v4331

Abstract: NTC 4,7 NTC M4 igbt sixpack 4512 diode
Contextual Info: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 18 22 13 17 21 6 4 2 5 9, 24 3 1 8 11, 12 15, 16 19, 20 NTC 7 Features Symbol Conditions Maximum Ratings

FMB-29

Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-29 1. Scope The present specifications shall apply to an FMB-29. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040512 1／5

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

T 4512 H diode

Abstract: diode T 4512 H diode rectifier p 600
Contextual Info: Bulletin 12122 rev. A 07/97 International TOR Rectifier SA FElR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A 'f s m = 950A VRRM800 to 1600V Description/Features The 60EPS. rectifierSA FE //?series has been optimized for very low forward voltage drop, with moderate leakage.

60EPS08

Abstract: 60EPS12 60EPS16
Contextual Info: Bulletin I2122 rev. A 07/97 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A IFSM = 950A VRRM 800 to 1600V Description/Features The 60EPS. rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.

DIODE 60 A

Abstract: 60EPS16
Contextual Info: 60EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A DESCRIPTION/FEATURES Base cathode The 60EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable

60EPS08

Abstract: 60EPS12
Contextual Info: 60EPS. High Voltage Series Vishay High Power Products Input Rectifier Diode, 60 A Base common cathode 2 TO-247AC modified 1 Anode 1 3 Anode 2 DESCRIPTION/FEATURES The 60EPS. rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate

PS-4512 diode

Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Contextual Info: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

60EPS12

Abstract: P035H
Contextual Info: Bulletin I2176 10/04 SAFEIR Series 60EPS12PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 1200V Description/ Features The 60EPS12PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has

Contextual Info: Bulletin I2176 rev A 07/06 SAFEIR Series 60EPS.PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 800 to 1200V Description/ Features The 60EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

60EPS12

Abstract: P035H
Contextual Info: Bulletin I2176 rev A 07/06 SAFEIR Series 60EPS.PbF INPUT RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1V @ 30A IFSM = 950A VRRM = 800 to 1200V Description/ Features The 60EPS.PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate

AM4512C4512C

Abstract: AM4512C
Contextual Info: Analog Power AM4512C P & N-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC

SMPS 30v 20a

Contextual Info: AO4714 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

MD74SC137

Abstract: MH88500IN MT8812
Contextual Info: MH88500IN Hybrid Subscriber Line Interface Circuit SLIC Preliminary Information ISSUE 1 Features April 1995 Ordering Information • • • • • • • • • • Differential to single ended conversion No transformers required Minimum installation space

40 watt telephone ring generator circuit

Abstract: MH88612 telephone ring led indicator 40 watt telephone ring generator 24VDC relay drive current "Crosspoint Switch" ic relay 24v pabx ring generator relay 5v ring ic
Contextual Info:  MH88520-1 German Subscriber Line Interface Circuit SLIC Preliminary Information Features April 1995 ISSUE 4 • Differential to single ended conversion • Transformerless 2-2 wire conversion • Minimum installation space • Off-Hook detection and LED indicator drive

Contextual Info: VS-60EPS.PbF www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode 2 FEATURES • Designed and JEDEC-JESD47 qualified according to • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-247AC modified 1 Cathode

60EPS08PBF

Abstract: VS-60EPS12PBF
Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47

Contextual Info: VS-60EPS.PbF Series, VS-60EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A Base common cathode FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47

Contextual Info: VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47 qualified according

I2122

Abstract: 035H 60EPS08 60EPS12 60EPS16 "RECTIFIER DIODE"
Contextual Info: Bulletin I2122 rev. C 10/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.1V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features Major Ratings and Characteristics Characteristics Values Units 60 A VRRM 800 to 1600 V Typical applications are in input rectification and these

p035h

Abstract: 60EPS16
Contextual Info: Bulletin I2185 12/04 SAFEIR Series 60EPS16PbF INPUT RECTIFIER DIODE VF < 1V @ 30A Lead-Free "PbF" suffix IFSM = 950A VRRM = 1600V Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal Description/ Features Values Units 60 A waveform mized for very low forward voltage drop, with moderate

035H

Abstract: 60EPS08 60EPS12 60EPS16
Contextual Info: Bulletin I2122 rev. C 10/05 SAFEIR Series 60EPS. INPUT RECTIFIER DIODE VF < 1.1V @ 60A IFSM = 950A VRRM = 800 to 1600V Description/ Features Major Ratings and Characteristics Characteristics Values Units 60 A VRRM 800 to 1600 V Typical applications are in input rectification and these

ferranti array

Contextual Info: MH SERIES FERRANTI INTERDESIGN, INC. HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15MHz at 5V. • 8 Arrays Ranging from 70 to 1600 Two Input