DIODE WM9 Search Results

2238 586 15649

Abstract: GRM155R60J105KE19D smd transistor J3 -jumper -jack 2238 SOT363 lm317aemp KP 2010 smd transistor J6 Phycomp 2238 586 15649 SMD 106 CAPACITOR 61729-0010BLF
Contextual Info: WM9010-6244-CS12-EV1-REV1 Schematic and Layout DOC TYPE: SCHEMATIC AND LAYOUT BOARD REFERENCE: WM9010-6244-CS12-EV1-REV1 BOARD TYPE: Customer Standalone WOLFSON DEVICE S : WM9010 DATE: February 2010 DOC REVISION: Rev 1 1.0 Customer Information 1 February 2010, Rev 1.0

Contextual Info: ¿57 SGS-THOMSON ¡m era « STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STHV102 STHV102FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A • TYPICAL RDS(on) = 3.1 Q. . ■ . . . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 S T P 2 N 80 S T P 2 N 8 0 FI S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N80 STP2N80FI V dss RDS on Id 800 V 800 V <7 a < 7 0. 2.4 A 1.5 A • TYPICAL R D S (on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI STP36N05L STP36N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

wm9 transistor

Abstract: GC2145
Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « B U Z80 buzsofi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80 BUZ80FI V dss RDS on Id 800 V 800 V < 4 a < 4 0. 3.4 A 2 .1 A • TYPICAL RDS(on) = 3.3 Q. . ■ . . . . AVALANCHE RUGGEDNESS TECHNOLOGY

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: STP5N30 STP5N30FI V dss RDS on 300 V 300 V E D ED TYP E STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 SGS-THOMSON ¡m era « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.2 Q . . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: ¿57 SGS-THOMSON ¡UÈTO « STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP6NA60 STP6NA60FI • . ■ . . . . V dss RDS on 600 V 600 V < 1 .2 Id a 6.5 A < 1 .2 0. 3 .9 A TYPICAL RDS(on) = 1 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿57 SGS-THOMSON ¡UÈTO « STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP7NA60 STP7NA60FI V dss RDS on Id 600 V 600 V < 1a < 1a 7.2 A 4.4 A . TYPICAL R DS(on) = 0.92 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED

Contextual Info: STP5N 30L S TP5N30LFI V dss RDS on 300 V 300 V E D ED TYP E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 STP5N30L S T P 5 N 3 0 LFI S G S -T H O M S O N ¡m e ra « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.25 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss STP5NA50 STP5NA50FI STP5NA50 STP5NA50FI 500 V 500 V RDS on Id a < 1 .6 a 5 A 3 A < 1 .6 . TYPICAL R Ds(on) = 1.2 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON ¡UÈTO « ¿ 5 7 STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP5NA80 STP5NA80FI dss 800 V 800 V R DS on Id < 2.4 a < 2.4 a 4.7 A 2.8 A • TYPICAL RDS(on) = 1 8 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « S T P 20 N06 s t p 2 0 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP20N06 S TP20N06FI V dss RDS on Id 60 V 60 V < 0 .085 Q. < 0 .085 Q. 20 A 13 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP8NA50 STP8NA50FI S T P 8 N A 50 S T P 8 N A 5 0 FI dss 500 V 500 V R DS on Id < 0.85 Q. < 0.85 Q. 8 A 4.5 A • TYPICAL RDS(on) = 0.7 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

STP15

Contextual Info: S T P 15 N 0 5 L s t p i 5 N 0 5 LFI S G S -T H O M S O N ¡m e ra « ¿ 57 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP15N 05L S TP15N05LFI dss 50 V 50 V R DS on Id < 0.15 a < 0.15 a 15 A 10 A . TYPICAL RDs(on) = 0.115 Q . AVALANCHE RUGGED TECHNOLOGY

transistor tc 144

Contextual Info: ¿57 TYP E STP36N06 S TP36N06FI S G S -T H O M S O N ¡U È T O « S T P 36 N06 S T P 3 6 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 S G S -T H O M S O N ¡U È T O « S T P 6 N A 80 S T P 6 N A 8 0 FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STP6NA80 STP6NA80FI 800 V 800 V R D S o n CO CO ED ED V d ss A A TYP E Id 5.7 A 3.4 A • TYPICAL RDS(on) = 1 68 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss STP7NA40 STP7NA40FI STP7NA40 STP7NA40FI 400 V 400 V RDS on a <a < 1 1 Id 6 .5 A 4.1 A . TYPICAL R DS(on) = 0.82 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED