DIODO 100A Search Results
DIODO 100A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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diodo 100a
Abstract: Mitsubishi transistor
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QM100TX1-H OM100TX1-H E80276 E80271 diodo 100a Mitsubishi transistor | |
S043387
Abstract: g40dc24 RELE s043387 G40AC24A S10K300 G40DC5 S043287 G40AC5 diodo led rosso LED rosso
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S043587 S07K300) S10K300) S002090 G40DC5 G40DC5A G40DC15 G40DC24 S043387 g40dc24 RELE s043387 G40AC24A S10K300 G40DC5 S043287 G40AC5 diodo led rosso LED rosso | |
SC100C-40
Abstract: diodo 100A SC100C-100 SC100C-60 SC100C-80 thyristor 2200A diodo 102 thyristor t2* n 1200 SC100C100
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SC100C T-25W? SC100C-40 SC100C-60 SC100C-80 SC100C-100 C100C-120 diodo 100A SC100C-100 SC100C-60 thyristor 2200A diodo 102 thyristor t2* n 1200 SC100C100 | |
Contextual Info: THYRISTOR M ODULE non -IS O L A T E D TYPE PWB100A PWB1 0 0 A is a Thyristor module suitable for low voltage, 3 phase rectifier applications. • • • • If(av) : I 00A (each device) High Surge Current 3500 A (60Hz) Easy Construction Non-isolated. Mounting base as common Anode terminal |
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PWB100A 000237R 0D023AD | |
SC30C-100
Abstract: SC30C-60 SC30C-120 SC30C-40 SC30C-80 diodo 100A SC30C Diodo LT 45
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000053M SC30C_ SC30C-40 SC30C-60 SC30C-80 SC30C-100 SC30C-120 D000S3S diodo 100A SC30C Diodo LT 45 | |
Contextual Info: SSS1N60A Advanced Power MOSFET FEATURES BVoss “ 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 yA M ax. @ VOS= 600V |
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SSS1N60A | |
SC30C-60
Abstract: SC30C-120 SC30C-80 SC30C-100 SC30C-40 MAX5102
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SC30C_ SC30C-40 SC30C-60 SC30C-80 SC30C-100 SC30C-120 B-248 MAX5102 | |
Contextual Info: TH YRISTO R SC100C • Maximum Ratings SC100C-40 SC100C-60 SC100C-80 SC100C-100 SC100C-120 Ite m S ym bol U n it V rrm R e p e titiv e P e a k R e v e rs e V o lta g e 400 600 800 1 000 12 0 0 V V rsm N on-R epetitive Peak Reverse V oltage 480 720 960 1 100 |
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SC100C SC100C-40 SC100C-60 SC100C-80 SC100C-100 SC100C-120 | |
diodo 007Contextual Info: PD - 9.1267G International IGR Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss = |
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1267G IRF7504 46SS4S2 diodo 007 | |
BA-20 diode
Abstract: D 92 M - 03 DIODE high power diode 500v 1N50 1N50C p channel mosfet 100v 2A 500V MOSFET TSM1N50 TAG TO-92 500v 2A mosfet
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TSM1N50 TSM1N50 BA-20 diode D 92 M - 03 DIODE high power diode 500v 1N50 1N50C p channel mosfet 100v 2A 500V MOSFET TAG TO-92 500v 2A mosfet | |
12T24
Abstract: 2012S12 bt 1224 2005S12 2005S24 2005S48 2006S12 2006S24 2006S48 2506S
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E140645 MIL-HDBK-217F 4-40X 12T24 2012S12 bt 1224 2005S12 2005S24 2005S48 2006S12 2006S24 2006S48 2506S | |
A1000-REV00k9040-IE
Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
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101ra100
Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
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hall marking code A04
Abstract: INTELDX4 write-through YSS 928
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INTEL486â 100-MHz 32-Bit 16K-Byte hall marking code A04 INTELDX4 write-through YSS 928 | |
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
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antena microondas
Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
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LR200 CLS300 LR250 7ML1830-1HA 7ML1830-1MC 7ML1830-1MM antena microondas circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS | |
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
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