DIRECT RDRAM 1200 MHZ Search Results
DIRECT RDRAM 1200 MHZ Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
![]() |
||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
![]() |
||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
![]() |
||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
![]() |
||
MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
![]() |
DIRECT RDRAM 1200 MHZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
direct rdram rambus 1200Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high |
Original |
600MHz DL-0118-07 direct rdram rambus 1200 | |
K4R761869A-GCT9
Abstract: K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
|
Original |
K4R761869A 576Mbit 18bit 256/288Mb K4R761869A-GCT9 K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1 | |
K4R881869E-FCM8
Abstract: K4R881869E K4R881869E-GCT9 K4R881869E-GCM8 K4R881 K4R881869E-FCT9
|
Original |
K4R881869E 288Mbit 18bit 256/288Mb K4R881869E K4R881869E-FCM8 K4R881869E-GCT9 K4R881869E-GCM8 K4R881 K4R881869E-FCT9 | |
k4r881869e
Abstract: k4r881869e-gcm8 K4R881869E-FCM8
|
Original |
K4R881869E 288Mbit 18bit 256/288Mb K4R881869E- k4r881869e k4r881869e-gcm8 K4R881869E-FCM8 | |
K4R761869A
Abstract: K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1 K4R761869A-GCT9
|
Original |
K4R761869A 576Mbit 18bit 256/288Mb K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1 K4R761869A-GCT9 | |
Contextual Info: K4R571669D/K4R881869D for 1200MHz Direct RDRAM 256/288Mbit RDRAM D-die for 1200MHz 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 May 2003 Page -1 Version 1.4 May 2003 K4R571669D/K4R881869D for 1200MHz Direct RDRAM™ Change History Version 1.4( May 2003) |
Original |
K4R571669D/K4R881869D 1200MHz 256/288Mbit 16/18bit 256/288Mb | |
K4R761869A
Abstract: K4R761869A-FCM8 K4R761869A-FCT9
|
Original |
K4R761869A 576Mbit 18bit 256/288Mb K4R761869A- K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 | |
K4R571669EContextual Info: Direct RDRAM K4R571669E 256Mbit RDRAM E-die 512K x 16bit x 32s banks Direct RDRAMTM Version 1.4 January 2004 Page -1 Version 1.4 Jan. 2004 Direct RDRAM™ K4R571669E Change History Version 1.4( Jan. 2004) - First Copy ( Version 1.4x is named to unify the version of component and device operation datasheets) |
Original |
K4R571669E 256Mbit 16bit 256/288Mb K4R571669E- K4R571669E | |
Contextual Info: Direct RDRAM K4R571669E 256Mbit RDRAM E-die 512K x 16bit x 32s banks Direct RDRAMTM Version 1.4 January 2004 Page -1 Version 1.4 Jan. 2004 Direct RDRAM™ K4R571669E Change History Version 1.4( Jan. 2004) - First Copy ( Version 1.4x is named to unify the version of component and device operation datasheets) |
Original |
K4R571669E 256Mbit 16bit 256/288Mb K4R571669E- | |
rdram
Abstract: RDRAM 32 Bit RIMM4800 Module marking A97 A101 A102 A103 A104 B100 B101 B102
|
Original |
256/288Mb RIMM4800 256Mb/288Mb 1200MHz DL0164 DL0164 rdram RDRAM 32 Bit RIMM4800 Module marking A97 A101 A102 A103 A104 B100 B101 B102 | |
SAMSUNG MR18R162GMN0
Abstract: A76 MARKING CODE MR18R162GMN0-CK8
|
Original |
MR16R1624 MR18R1624 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 A76 MARKING CODE MR18R162GMN0-CK8 | |
marking a86
Abstract: transistor MN1 DATA SHEET transistor MN1
|
Original |
MR16R1624 MR18R1624 02ver 128/144Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) marking a86 transistor MN1 DATA SHEET transistor MN1 | |
MR16R162GAF0-CK8
Abstract: MR16R1622
|
Original |
MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb MR16R162GAF0-CK8 | |
kmmr18r88c1-rk8
Abstract: rg6 f connector 750 B36
|
Original |
KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 127mm. kmmr18r88c1-rk8 rg6 f connector 750 B36 | |
|
|||
MR18R0828BN1-CK8
Abstract: MR18R0824 A84 marking code
|
Original |
MR16R0824 MR18R0824 128/144Mbit -711MHz/-600MHz) -600MHz) 8Mx16) 128Mb 16K/32ms MR18R0828BN1-CK8 A84 marking code | |
Contextual Info: MR16R1622 4/8/G AF MR18R1622(4/8/G)AF Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning |
Original |
MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb | |
Contextual Info: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0 Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Page 0 Version 1.1 Aug. 2001 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
Original |
MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb | |
MR18R0828AN1-CK8
Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
|
Original |
MR16R0824 MR18R0824 127mm. MR18R0828AN1-CK8 ck7 marking code marking code b35 gan1 marking B44 | |
ck7 marking code
Abstract: marking code B49 a35 marking code
|
Original |
MR16R0824 MR18R0824 4/6/8/12/16d 128Mb 144Mb 127mm. ck7 marking code marking code B49 a35 marking code | |
0120dContextual Info: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. |
Original |
512Mb 1024Kx16/18x32s) 800MHz 1600MHz 625ns DL-0205-01 0120d | |
Contextual Info: Preliminary KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMM Module with 128Mb RDRAMs 4 6 8 1 2 16d RIMM™ Module with 144Mb RDRAMs Overview Key Timing Parameters/Part Numbers The Rambus RIMM™ module is a general purpose highperformance memory module suitable for use in a broad |
OCR Scan |
KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 128Mb/144Mb | |
intel MOTHERBOARD pcb layout guide
Abstract: 1553 stub repeater intel Chipset CRB Schematics intel 860 pcb layout guide differential ohms stackup 2N3904 82803AA MMBT3904LT1 PC800 SN74LVC07A
|
Original |
3I1021 intel MOTHERBOARD pcb layout guide 1553 stub repeater intel Chipset CRB Schematics intel 860 pcb layout guide differential ohms stackup 2N3904 82803AA MMBT3904LT1 PC800 SN74LVC07A | |
2N3904 A30
Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
|
Original |
||
OCXX
Abstract: relay UDM 112 sdr sdram reference soc toshiba 64MX4 TC59RM716 sdr sdram RAS 2415 signal path designer "routing tables"
|
Original |
7/03B-70 143MHz) TC59LM814/06C-50 200MHz) TC59LM814/06C-50 143MHz TC59RM716 400MHz) OCXX relay UDM 112 sdr sdram reference soc toshiba 64MX4 sdr sdram RAS 2415 signal path designer "routing tables" |