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    DIRECT RDRAM RAMBUS 1200 Search Results

    DIRECT RDRAM RAMBUS 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DIRECT RDRAM RAMBUS 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    intel MOTHERBOARD pcb layout guide

    Abstract: 1553 stub repeater intel Chipset CRB Schematics intel 860 pcb layout guide differential ohms stackup 2N3904 82803AA MMBT3904LT1 PC800 SN74LVC07A
    Text: R Intel 860 Chipset Memory Expansion Card MEC Design Guide May 2001 Document Number: 298302-001 R ® Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF 3I1021 intel MOTHERBOARD pcb layout guide 1553 stub repeater intel Chipset CRB Schematics intel 860 pcb layout guide differential ohms stackup 2N3904 82803AA MMBT3904LT1 PC800 SN74LVC07A

    MR16R162GAF0-CK8

    Abstract: MR16R1622
    Text: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0 Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Page 0 Version 1.1 Aug. 2001 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb MR16R162GAF0-CK8

    SAMSUNG MR18R162GMN0

    Abstract: A76 MARKING CODE MR18R162GMN0-CK8
    Text: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


    Original     		PDF MR16R1624 MR18R1624 02ver 128/144Mbit 256/288Mb 100ps 250ps 200ps -711MHz/-600MHz) SAMSUNG MR18R162GMN0 A76 MARKING CODE MR18R162GMN0-CK8

    kmmr18r88c1-rk8

    Abstract: rg6 f connector 750 B36
    Text: KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)


    Original     		PDF KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 127mm. kmmr18r88c1-rk8 rg6 f connector 750 B36

    a65 1021

    Abstract: No abstract text available
    Text: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)


    Original     		PDF MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb a65 1021

    MR18R0828AN1-CK8

    Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
    Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 Change History Version 1.0 (August 1999) - Preliminary * First copy. * Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999) Page No. Change Description 1 - Delete the part numbers of low power.


    Original     		PDF MR16R0824 MR18R0824 127mm. MR18R0828AN1-CK8 ck7 marking code marking code b35 gan1 marking B44

    marking a86

    Abstract: transistor MN1 DATA SHEET transistor MN1
    Text: MR16R1624 6/8 MN1 MR18R1624(6/8)MN1 Change History Version 1.1 (March 2000) * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet -Only 4/6/8d RIMM are using 6layer PCB. Page 0 Version 1.1 Mar. 2001 MR16R1624(6/8)MN1 MR18R1624(6/8)MN1


    Original     		PDF MR16R1624 MR18R1624 02ver 128/144Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) marking a86 transistor MN1 DATA SHEET transistor MN1

    Untitled

    Abstract: No abstract text available
    Text: MR16R1622 4/8/G AF MR18R1622(4/8/G)AF Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning


    Original     		PDF MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb

    Untitled

    Abstract: No abstract text available
    Text: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0 Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Page 0 Version 1.1 Aug. 2001 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0 (16Mx16)*2(4/8/16)pcs RIMMTM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb

    ck7 marking code

    Abstract: marking code B49 a35 marking code
    Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 4/6/8/12/16d RIMMTM Module with 128Mb RDRAMs 4/6/8/12/16d RIMMTM Module with 144Mb RDRAMs Revision History Version 1.0 (August 1999) - Preliminary - First copy. - Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999)


    Original     		PDF MR16R0824 MR18R0824 4/6/8/12/16d 128Mb 144Mb 127mm. ck7 marking code marking code B49 a35 marking code

    MR18R0828BN1-CK8

    Abstract: MR18R0824 A84 marking code
    Text: MR16R0824 6/8/C/G BN1 MR18R0824(6/8/C/G)BN1 Change History Version 1.1 (October 2000) - First copy. - Based on the 1.1 ver. 128/144Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1a (October 2000) * Update based on the latest Rambus RIMM Datasheet Page No.


    Original     		PDF MR16R0824 MR18R0824 128/144Mbit -711MHz/-600MHz) -600MHz) 8Mx16) 128Mb 16K/32ms MR18R0828BN1-CK8 A84 marking code

    Untitled

    Abstract: No abstract text available
    Text: MD16R1624 8/G DF0 - CN1 for 1200MHz MD18R1624(8/G)DF0 - CN1 for 1200MHz 32 Bit RIMM Module Change History Version 1.0 (January 2003) * First copy. * Based on Version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 1.0 January 2003 MD16R1624(8/G)DF0 - CN1 for 1200MHz


    Original     		PDF MD16R1624 1200MHz MD18R1624 256/288Mbit 16Mx16)

    rdram

    Abstract: RDRAM 32 Bit RIMM4800 Module marking A97 A101 A102 A103 A104 B100 B101 B102
    Text: Advance Information 32 Bit RIMM 4800 Module with 256/288Mb RDRAM® Devices Overview Features The 32 Bit RIMM®4800 module is a general purpose highperformance line of memory modules suitable for use in a broad range of applications including computer memory,


    Original     		PDF 256/288Mb RIMM4800 256Mb/288Mb 1200MHz DL0164 DL0164 rdram RDRAM 32 Bit RIMM4800 Module marking A97 A101 A102 A103 A104 B100 B101 B102

    745 B36 diode

    Abstract: micron sensor spd 357 RM01 MT8VR6416A
    Text: PRELIMINARY‡ 32, 64, 128 MEG x 16/18 RAMBUS RIMM MODULES RAMBUS RIMM MODULE MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/modds.html


    Original     		PDF MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A 184-pin 128MB 256MB 745 B36 diode micron sensor spd 357 RM01 MT8VR6416A

    NEC obsolete parts

    Abstract: NEC rambus dram NEC obsolete parts ic NEC RDRAM 1994 synchronous dram nec RDRAM CONCURRENT Rambus ASIC Cell rambus channel direct rdram rambus 1200 concurrent rdram
    Text: ARCHITECTURAL OVERVIEW This document was created with FrameMaker 4.0.2 Document No. 60291  Copyright 1994 NEC Electronics Inc. All rights reserved. No part of this document may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means without the prior written permission


    Original     		PDF

    0120d

    Abstract: No abstract text available
    Text: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.


    Original     		PDF 512Mb 1024Kx16/18x32s) 800MHz 1600MHz 625ns DL-0205-01 0120d

    code A106

    Abstract: MD16R1628EG0-CN1 MD16R1628EG0-CT9 MD16R162GEG0-CN1 MD16R162GEG0-CT9 MD16R1624EG0-CM8 MD16R1624EG0-CN1 MD16R1624EG0-CT9 MD16R1628EG0-CM8 serial presence detect samsung 2010
    Text: MD16R1624 8/G EG0 Change History Version 1.0 (January 2004) * First copy. * Based on version 1.0 (July 2002) 256Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 Jan. 2004 MD16R1624(8/G)EG0 (16Mx16)*4(8/16)pcs 32 Bit RIMM Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MD16R1624 256Mbit 16Mx16) 256Mb 16K/32ms code A106 MD16R1628EG0-CN1 MD16R1628EG0-CT9 MD16R162GEG0-CN1 MD16R162GEG0-CT9 MD16R1624EG0-CM8 MD16R1624EG0-CN1 MD16R1624EG0-CT9 MD16R1628EG0-CM8 serial presence detect samsung 2010

    code A106

    Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
    Text: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms code A106 MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106

    a106 diode

    Abstract: code A106 a105 a114 marking A93 transistor marking A21 a105 transistor A116 diode a74 marking code B92 02 diode diode A106
    Text: MD18R3268 G AG0 Preliminary 32 Bit RIMM Module Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 0.1 Sept. 2003 Preliminary 32 Bit RIMM® Module MD18R3268(G)AG0


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms a106 diode code A106 a105 a114 marking A93 transistor marking A21 a105 transistor A116 diode a74 marking code B92 02 diode diode A106

    DDR RAM 512M

    Abstract: ELPIDA mobile DDR TSOP II elpida ect-ts-1942 Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
    Text: Part Number Decoder - 1 Part Number Decoder This document is intended to give customers understanding of the Elpida part numbering system. For detailed line-up about the individual products, please consult Elpida sales representatives. Elpida Memory, Inc. 2002-2006


    Original     		PDF ECT-TS-1942 1200MHz 184-pin 160-pin 232-pin 1066MHz DDR RAM 512M ELPIDA mobile DDR TSOP II elpida Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400

    serial presence detect samsung 2010

    Abstract: No abstract text available
    Text: MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 (Feb. 2004) * Eliminate “Preliminary” Version 1.0 Feb. 2004 MD18R3268(G)AG0


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms serial presence detect samsung 2010

    K4R761869A

    Abstract: K4R761869A-FCM8 K4R761869A-FCT9
    Text: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.4 September 2003 Page -1 Version 1.4 Sept. 2003 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R761869A 576Mbit 18bit 256/288Mb K4R761869A- K4R761869A K4R761869A-FCM8 K4R761869A-FCT9

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMMR16R84 6/8/C/G AC1 KMMR18R84(6/8/C/G)AC1 4/6/8/12/16d RIMM Module with 128Mb RDRAMs 4 6 8 1 2 16d RIMM™ Module with 144Mb RDRAMs Overview Key Timing Parameters/Part Numbers The Rambus RIMM™ module is a general purpose highperformance memory module suitable for use in a broad


    OCR Scan     		PDF KMMR16R84 KMMR18R84 4/6/8/12/16d 128Mb 144Mb 128Mb/144Mb

    MPACT 2

    Abstract: MPACT LG Mpact gm90c701q Concurrent RDRAM AD1845 LG concurrent RDRAM Chromatic Research concurrent rdram LG concurrent RDRAM 72
    Text: LG Sem icon Co., Ltd. Mpact /3ooo media processor G M 90C701Q 1. G e n e r a l D e s c r ip tio n s LG Semicon’s M pact™ /3000 m edia processor GM 90C701Q reaches a new level o f multimedia integration for W indows 95 based PCs by leveraging architectural advances in VLIW, SIMD


    OCR Scan     		PDF 90C701Q) Windows95 MpactTM/3000 90C701Q MPACT 2 MPACT LG Mpact gm90c701q Concurrent RDRAM AD1845 LG concurrent RDRAM Chromatic Research concurrent rdram LG concurrent RDRAM 72