DIRECTED Search Results

Contextual Info: PROFESSIONAL QUALITY, HIGH DENSITY SUBMINIATURE-D CONNECTORS WIN-DD Series FOR INDOOR/OUTDOOR NONHAZARDOUS ENVIRONMENTAL APPLICATIONS WHERE PROTECTION FROM DUST, RAIN, HOSE DIRECTED WATER AND LIMITED WATER IMMERSION IS REQUIRED C O N T A C T V A R IA N T S

nec 2401

Abstract: 400P DE375-102N10A Directed Energy
Contextual Info: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR

QFN-20

Abstract: SKY13264-340LF
Contextual Info: PRELIMINARY DATA SHEET SKY13264-340LF: 4 x 2 Switch Matrix 250 MHz–2.15 GHz Features Four inputs, two outputs ● Any input can be directed to either output ● Only four control lines required ● High interport isolation: 40 dB typ. up to 0.95 GHz ● Miniature QFN-20 4 x 4 mm package

DE275X2-102N06A

Abstract: 102N06 DE275X2 102N06A 400P DE-27
Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in

2111N

Abstract: ULN-2113A "product detector" 2113A ULN-2111 9845A ULN-2110A ULN2110 radar detector detector SPRAGUE SEMICONDUCTOR
Contextual Info: SP RAGUE Sprague Electric's Semiconductor Division has taken the advan­ tages of Sprague-pioneered ion-implantation and directed them toward the design and manufacture of consumer entertainment products. With 'state-of-the-art' design and process capability,

Contextual Info: PRELIMINARY DATA SHEET SKY13272-340LF: 4 x 2 Switch Matrix 250 MHz–2.15 GHz Features Four inputs, two outputs Any input can be directed to either output ● Only four control lines required ● High interport isolation: 40 dB typ. up to 0.95 GHz ● Miniature QFN-20 4 x 4 mm package

sfc2741c

Abstract: SFC2741 sn72741 SF.C2741C SN72741L SN55471 SFC2741DC ULN-2113A SG3821N LM1307N
Contextual Info: SPRAGUE Sprague Electric's Semiconductor Division has taken the advan­ tages of Sprague-pioneered ion-implantation and directed them toward the design and manufacture of consumer entertainment products. With 'state-of-the-art' design and process capability,

HE1302

Contextual Info: 1ÛE HE1302ML D • MMU205 0010=102 3 InGaAsP IRED HITACHI/ OPTOELECTRONICS Description r-v-iá HE1302M L is a high-power 1.3 ftm InGaAsP infrared emitting diode with double heterojunction structure, which provides high speed response. Optical output from the chip is directed to the

charging ic

Abstract: charging i.c BH3890FV
Contextual Info: 99W063A Charging control driver IC for Portable telephone BH3890FV Dimension Description Units : mm The BH3890FV is a charging IC developed for a lithium ion battery (1 cell). Back-up charging circuit and charging current monitor circuit are included. This IC is directed by a micro computer controller.

Contextual Info: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction

MPC821

Contextual Info: SECTION 19 DEVELOPMENT SUPPORT Emulators require a level of control and observation that are in sharp contrast to the trend of modern microcomputers and microprocessors in which many bus cycles are directed to internal resources and are not externally visible. The same is true for bus analyzers. To

MPC555

Contextual Info: SECTION 21 DEVELOPMENT SUPPORT 21.1 Overview The visibility and controllability requirements of emulators and bus analyzers are in opposition to the trend of modern microcomputers and microprocessors where many bus cycles are directed to internal resources and are not visible externally.

DE275X2-501N16A

Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in

102N12

Abstract: Directed Energy Directed 400P DE375-102N12A
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: ADNS-7100-001 Trim Lens Data Sheet Description The ADNS-7100-001 laser mouse trim lens is designed for use with Avago Technologies ADNS-7630 one chip Bluetooth LaserStreamTM sensors. Together with the VCSEL, the ADNS-7100-001 trim lens provides the directed illumination and optical imaging necessary for

k 2645 MOSFET

Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
Contextual Info: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology

"Brushless DC Motor"

Abstract: 60NF06 motor Speed Sensor circuit diagram 5V power supply using bridge circuit using 7805 speed control of dc motor using pwm circuit diagram three phase BLDC motor mosfet driver circuits 9v dc motor 36v brushless dc motor 5V power supply using bridge circuit using 7805 d 3 phase DC motor speed control circuit
Contextual Info: Using the HT45RM03 and HT45B0C to Control a 3-phase Brushless DC Motor Using the HT45RM03 and HT45B0C to Control a 3-phase Brushless DC Motor D/N: HA0117E Introduction The important application for this example is directed towards 3-phase Brushless DC motors. These motors have internal positioning sensors. The operating voltage is 36V DC

Contextual Info: PRELIMINARY DATA SHEET SKY13272-340LF: 4 x 2 Switch Matrix 250 MHz–2.15 GHz Features Four inputs, two outputs Any input can be directed to either output ● Only four control lines required ● High interport isolation: 40 dB typ. up to 0.95 GHz ● Miniature QFN-20 4 x 4 mm package

vdgr test circuit

Abstract: MOSFET 2301 oss 200-20 vdr 275 DE-275
Contextual Info: - ^ ' • » n ^ c - r ' T n r n r r n c m c p T î v i m p / . . . Q 7 n f i n n O T r , ÎTliTafl^ ^ s D IR EC TE! ENERGY INC t - i ~ _ » Q0ÜDÜ27 =■ DE-275 SERIES □ DATA ante i DIRECTED ENERGY, IN C -, > ■ ^ DE-275 20IP11

DE375-102N10A

Contextual Info: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000

ADNS-7550

Abstract: 7550 7550 - 1 7530 ADNS-7530
Contextual Info: ADNS-6150 Small Form Factor Lens Data Sheet Description The ADNS-6150 small form factor SFF laser mouse lens is designed for use with Avago Technologies ADNS-7530 and ADNS-7550 LaserStream sensors. Together with the VCSEL, the ADNS-6150 SFF lens provides the directed illumination and optical imaging necessary for proper operation of the sensor. ADNS-6150 SFF lens is a precision molded

mospower applications handbook

Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
Contextual Info: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101

HT81003

Abstract: HT81006 HT81009 HT81012 HT81018 HT81R03 HT81R36 HT81XXX IC 74150 pin diagram
Contextual Info: HT81XXX EasyVoiceTM Speech Features • Operating voltage: 2.4V~5V · FLAG2 options · Directly drives an external transistor - 3Hz flash 6Hz flash Busy output OFF · 6 keys Directed · PWM function directly driver speaker · Low standby current (1mA typ. for VDD=3V)

TI16L8-15

Abstract: ti16l8 CMD27 TI16L815 1301P SBD21 TI16L8-1 SBD15 ti16l8- D1143
Contextual Info: Revision A TEXAS INSTRUMENTS Semiconductor Group TNETA1560/TNETA1500 Sbus Reference Schematic Notebook Physical Interface SONET 155 Mbps, Mutimode fiber Connector Revision A July 12, 1995 Questions may be directed to: TNETA TECHNICAL SUPPORT LINE *4ATM@ti.com