DISTORTION Search Results

POUT315

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

5964-16L

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.9 G H z to 6.4 G H z

mk5089n

Abstract: 5089 DTMF TCM5089 encoder dtmf 5089 Mostek 5089 M5089 Mostek MK5089 mk50 DTMF 5089
Contextual Info: TCM 5089 TONE ENCODER D2651, NOVEMBER 1982-REVISED DECEMBER 1990 Device Powered Directly by Telephone or Small Batteries • Keyboard or Electronic Input Capability • Dual-Tone and Single-Tone Capability • Minimal Standby Power Requirement • Total Harmonic Distortion Meets EIA

Contextual Info: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz

UC3854 Design Note

Abstract: UC3854 test
Contextual Info: IN T E G R A T E D C IR C U IT S UC1854 UC2854 UC3854 UNITRODE High Power Factor Preregulator FEATURES DESCRIPTION • Control Boost PWM to 0.99 Power Factor • Limit Line Current Distortion To <5% • World-Wide Operation Without Switches • Feed-Forward Line Regulation

Contextual Info: TIM7785-30SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 45 dBm at 7.7 GHz to 8.5 GHz ■ HIGH EFFICIENCY 77 add = 34 % at 7.7 GHz to 8.5 GHz ■ HIGH GAIN G-idB = 6.0dB at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 25 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 36 d B m a t 5.9 G H z to 6.4 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45.0 d B m at 7.9 G H z to 8 .4 G H z

TIM1213

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=8.5dB at 5.3GHz to 5.9GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.0dB at 3.7GHz to 4.2GHz

TIM7785-60ULA

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-60ULA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3= -30 dBc at Pout= 41.0dBm Single Carrier Level „ HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=7.5dB at 7.7GHz to 8.5GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

TIM7179-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz

Contextual Info: THS4011, THS4012 290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS SLOS216A – JUNE 1999 – FEBRUARY 2000 D D D D D D D D THS4011 D AND DGN PACKAGE TOP VIEW Very High Speed – 290 MHz Bandwidth (G = 1, –3 dB) – 310 V/µs Slew Rate – 37 ns Settling Time (0.1%)

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SN74FB1650 18-BIT TTL/BTL UNIVERSAL STORAGE TRANSCEIVER SCBS178K – AUGUST 1992 – REVISED AUGUST 1999 D D D D Compatible With IEEE Std 1194.1-1991 BTL TTL A Port, Backplane Transceiver Logic (BTL) B Port Open-Collector B-Port Outputs Sink 100 mA BIAS VCC Minimizes Signal Distortion

TOSHIBA HEMT

Abstract: TGI7785-120L
Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

PIN275

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz