TIM1213 Search Results

TIM1213

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET

TIM1213-4

Contextual Info: TOSHIBA TIM1213-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TIM1213-15L FEATURES : • LOW IN TER M O D U LA TIO N D IS TO R TIO N ■ HIGH GAIN IM 3 = - 4 5 dBc at Po = 30.0 dBm, GidB = 6.0 dB at 12. 7 GHz to 13. 2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY M ATCHED HIG H POWER ■ HERMETICALLY SEALED PACKAGE

TIM1213-10

Contextual Info: TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

TIM1213-8

Contextual Info: TOSHIBA TIM1213-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-4L TECHNICAL DATA FEATURES : • ■ HIGH GAIN LOW INTER M O D U LA TIO N DISTO R TIO N IM 3 = - 4 5 dBc at Po = 25 dBm, G idB = 7.5 dB at 12.7 GHz to 13.2 GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED

Contextual Info: TOSHIBA MICROW AVE PO W ER GaAs FET MICROWAVE SEM IC O N D U C TO R TIM1213-15L TECHNICAL DATA FEATURES • ■ LOW IN T E R M O D U LA T IO N D IS TO R TIO N HIGH GAIN IM 3 = - 45 d B c a t Po = 30.0 dB m , G-idB = 6.0 dB at 12.7 GHz to 13.2 GHz S in g le C arrier Level

TIM1213-10L

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm „ HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz „ HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz „ BROAD BAND INTERNALLY MATCHED FET

TIM1213-15

Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET MICROW AVE SEM ICONDUCTOR TIM1213-15 TECHNICAL DATA FEATURES: • HIGH POWER 9 BROAD BAND INTERNALLY MATCHED PidB = 42. OdBm a t 12.7 to 13. 2GHz Q HIGH GAIN HERMETICALLY SEALED PACKAGE G idB = 6. OdB a t 12.7 to 13. 2GHz

TIM1213-5

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-5 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=37.0dBm at 12.7GHz to 13.2GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=7.0dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C

Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-15 TECHNICAL DATA FEATURES: • HIGH POWER P ,c ib ■ = 4 2 . O dBm a t HIGH GAIN G ida » 6. QdB a t 12.7 \ to « BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE 1 3 . 2 GHz

TIM1213-8L

Contextual Info: TOSHIBA TIM1213-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE

Contextual Info: - TIM1213-15L FEA TU R ES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N ■ IM 3 = - 4 5 d B c at Po = 30.0 dBm , G-idB = 6.0 dB at 12.7 GHz to 13.2 GHz Single C arrier Level ■ H IG H GAIN H IG H PO W ER ■ B R O A D B A ND IN T E R N A L L Y M A T C H E D

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10L Features • H igh po w e r - IM 3 = -45 d B c a t Po = 29 dB m , - S in g le c a rrie r level • H igh po w e r - P 1dB = 4 0 .5 d B m at 12.7 G H z to 13.2 G H z • H igh gain - G 1 b = 6 .0 dB at 12.7 G H z to 13.2 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM1213-10L TECHNICAL DATA FEATURES : • HIG H POWER ■ HIGH GAIN IM 3 = - 45 dBc at Po = 29 dBm, G 1dB = 6.0 dB at 12.7 GHz to 13.2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED

MW5024

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

TIM1213-30L

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 12.7GHz to 13.2GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 12.7GHz to 13.2GHz „ LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=7.5dB at 12.7GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM1213-2

Contextual Info: TOSHIBA TIM1213-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

TIM1213-4L

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 12.7GHz to 13.2GHz „ HIGH GAIN G1dB=7.5dB at 12.7GHz to 13.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-2L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C