DL-41 PACKAGE Search Results

DL-41 PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H

DL-41 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
zener 4744 Abstract: DL-41 DL4728A DL4764A DL-41 package Contextual Info: Formosa MS DATA SHEET DL4728A~DL4764A SURFACE MOUNT ZENER DIODES VOLTAGE 3.3 to 100 Volts POWER MELF/DL-41 1.0 Watts Unit : inch mm FEATURES • Low profile package • Built-in strain relief .110(2.8) MECHANICAL DATA • Case: Molded Glass MELF / DL-41	Original	DL4728A DL4764A MELF/DL-41 DL-41 MIL-STD-202E, L4762A L4763A L4764A zener 4744 DL-41 DL4764A DL-41 package	PDF
MSM514400DL Abstract: msm514400d Contextual Info: ¡ Semiconductor MSM514400D/DL ¡ Semiconductor MSM514400D/DL E2G0023-17-41 1,048,576-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D/DL is a 1,048,576-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and	Original	MSM514400D/DL E2G0023-17-41 576-Word MSM514400D/DL 26/20-pin 20pin MSM514400DL msm514400d	PDF
MSM514102D Abstract: MSM514102DL Contextual Info: E2G0149-29-41 ¡ Semiconductor MSM514102D/DL ¡ Semiconductor This version: Apr. 1999 MSM514102D/DL 4,194,304-Word ¥ 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514102D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate	Original	E2G0149-29-41 MSM514102D/DL 304-Word MSM514102D/DL 26/20-pin 20pin MSM514102D MSM514102DL	PDF
MSM514100D Abstract: MSM514100DL Contextual Info: E2G0022-17-41 ¡ Semiconductor MSM514100D/DL ¡ Semiconductor This version: Jan. 1998 MSM514100D/DL Previous version: May 1997 4,194,304-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate	Original	E2G0022-17-41 MSM514100D/DL 304-Word MSM514100D/DL 26/20-pin 20pin MSM514100D MSM514100DL	PDF
MSM514400D Abstract: MSM514400 MSM514400DL Contextual Info: E2G0023-17-41 ¡ Semiconductor MSM514400D/DL ¡ Semiconductor This version: Jan. 1998 MSM514400D/DL Previous version: May 1997 1,048,576-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D/DL is a 1,048,576-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate	Original	E2G0023-17-41 MSM514400D/DL 576-Word MSM514400D/DL 26/20-pin 20pin MSM514400D MSM514400 MSM514400DL	PDF
MSM514100DL Contextual Info: E2G0022-17-41 ¡ Semiconductor MSM514100D/DL ¡ Semiconductor This version: Jan. 1998 MSM514100D/DL Previous version: May 1997 4,194,304-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate	Original	E2G0022-17-41 MSM514100D/DL 304-Word MSM514100D/DL 26/20-pin 20pin MSM514100DL	PDF
Contextual Info: E2G0023-17-41 ¡ Semiconductor MSM514400D/DL ¡ Semiconductor This version: Jan. 1998 MSM514400D/DL Previous version: May 1997 1,048,576-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D/DL is a 1,048,576-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate	Original	E2G0023-17-41 MSM514400D/DL 576-Word MSM514400D/DL 26/20-pin 20pin	PDF
SQJ28-P-400-127 Contextual Info: E2G0006-17-41 O K I Semiconductor _ Packaging Packaging 5 V Power Supply DRAM Products MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C MSM512805C MSM514100D/DL MSM514400D/DL MSM514800C/CSL MSM514900C/CSL	OCR Scan	E2G0006-17-41 MSM511000C/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C SQJ28-P-400-127	PDF
S14400 Abstract: MSMS14400 Contextual Info: O K I Semiconductor E2G0023-17-41 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514400D/DL is a 1,048,576-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and	OCR Scan	576-Word E2G0023-17-41 MSM514400D/DL 26/20-pin 20pin MSM514400DL S14400 MSMS14400	PDF
Contextual Info: Package Drawings Unit = Inch mm Glass DO-35 DO7 DO-15 Glass / Plastic DO-41 D-1 Package Drawings Unit = Inch (mm) DO-201AD A-405 R-1 R-6 D-2 Package Drawings Unit = Inch (mm) HVM without Terminal Ends RA / SRA Mini MELF DL-41 / MELF D-3 Package Drawings	Original	DO-35 DO-15 DO-41 DO-201AD DL-41 O-220AB O-220AC OT-23 DO-214AA DO-214AB	PDF
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and	OCR Scan	MSM514100P/MSM514100PL 304-Word E2G0022-17-41 MSM514100D/DL MSM514100D /20-pin 20pin	PDF
bq785 Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and	OCR Scan	E2G0022-17-41 MSM5141 304-Word MSM514100D/DL a26/20-pin 20-pin 26/20-pin bq785 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d	PDF
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E 2G 0 02 2-1 7-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and	OCR Scan	MSM5141 304-Word MSM514100D/DL 26/20-pin 20pin /20-pin MSM514100DL	PDF
diodes 1N34A color Abstract: 1N277 1N270 Contextual Info: DIODES INC 32E ^ 2û4ô?CJ3 00Q03Sfl 1 m ZENER DIODES 1W ZENER DIO DES/DO -41 /M E L F DL-41 Device Type IDII " T - OPERATING AND STORAGE TEMPERATURE Nominal Zener Voltage Test Current VZ @ IZT IZT ZZT@IZT ZZK@IZK Ohms Maximum Reverse Leakage Current Maximum Zener Impedance	OCR Scan	00Q03Sfl DL-41 1N4728A 1N4729A/DL4729A 1N4730A/DL4730A 1N4731A/DL4731A 1N4732A/DL4732A 1N4733A/DL4733A 1N4734A/DL4734A 1N4735A/DL4735A diodes 1N34A color 1N277 1N270	PDF

DO-214 melf Contextual Info: OUTLINE DRAWINGS U nit = inch mm DL-35 MiniMELF ^ 3.5 :0.1 DL-41 MELF ► * \ C a thode X M a rk / — ► Cathode Mark b*— UNIT=(mm) UNIT=(mm) DO-34 .075 (1.9) DIA. MAX. X .017 (0.42) DIA. 1.1 (27.5) MIN. 114 (2.9) MAX. 1.1 (27.5) MIN. A-405 .0 2 3 6 (0 .6)DIA.	OCR Scan	DL-35 DL-41 DO-34 T-89A O-220 DO-214 DO-214 melf	PDF
DL-41 package Abstract: 1N277 diodes 1n270 1N296A diode 1n60 diode germanium 1n270 diodo Zener 4.1v N60 germanium diode BA8206ba4 diodes 1N34A Contextual Info: DIODES INC 32E — 2fl407ci3 000035a i Oil ZENER DIODES 1W ZENER D IO D E S /D O -41/M E L F DL-41 OPERATING AND STORAGE TEMPERATURE N om inal Zener Voltage Test C u rre n t VZ @ IZT «ZT ZZT@IZT ZZK@ IZK Volts mA O hm s O hm s 1N4728A 1N4729A/DL4729A 1N4730A/DL4730A	OCR Scan	00003SÃ DIODES/DO-41 DL-41 1N4728A 1N4729A/DL4729A 1N4730A/DL4730A 1N4731A/DL4731A 1N4732A/DL4732A 1N4733A/DL4733A 1N4734A/DL4734A DL-41 package 1N277 diodes 1n270 1N296A diode 1n60 diode germanium 1n270 diodo Zener 4.1v N60 germanium diode BA8206ba4 diodes 1N34A	PDF
L4760 Abstract: L4759 Contextual Info: DATA SHEET DL4728A~DL4764A SURFACE MOUNT ZENER DIODES 3.3 to 100 Volts VOLTAGE POWER MELF/DL-41 1.0 Watts Unit : inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance • Both normal and Pb free product are available : .110(2.8)	Original	DL4728A DL4764A MELF/DL-41 DL-41 MIL-STD-202E, L4760 L4759	PDF
Contextual Info: SANGDEST MICROELECTRONICS DL47 -SERIES Green Products Technical Data Data Sheet N0203, Rev. A ORDERING INFORMATION Device DL47-SERIES Package DL-41 Pb-Free Shipping 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging	Original	N0203, DL47-SERIES DL-41 5000pcs	PDF
4735 zener Abstract: panjit DL4735A Contextual Info: DL4728A SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 3.3 to 100 Volts 1 Watts POWER FEATURES • Low profile package • Built-in strain relief • Low inductance • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MELF / DL-41	Original	DL4728A 2002/95/EC DL-41 MIL-STD-750, 2011-REV 4735 zener panjit DL4735A	PDF
DL-41 Abstract: DL4728A DL4764A DL-41 package BI 370 l4750 Contextual Info: DATA SHEET DL4728A~DL4764A SURFACE MOUNT ZENER DIODES 3.3 to 100 Volts VOLTAGE POWER MELF/DL-41 1.0 Watts Unit : inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance .110(2.8) .102(2.6)DIA. • In compliance with EU RoHS 2002/95/EC directives	Original	DL4728A DL4764A MELF/DL-41 2002/95/EC DL-41 MIL-STD-750, L4762A L4763A L4764A DL-41 DL4764A DL-41 package BI 370 l4750	PDF
L4760 Contextual Info: DATA SHEET DL4728A~DL4764A SURFACE MOUNT ZENER DIODES 3.3 to 100 Volts VOLTAGE POWER MELF/DL-41 1.0 Watts Unit : inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance .110(2.8) .102(2.6)DIA. • In compliance with EU RoHS 2002/95/EC directives	Original	DL4728A DL4764A 2002/95/EC MELF/DL-41 DL-41 MIL-STD-750, L4760	PDF
DL-41 package Abstract: DL-41 DL4728A DL4764A L4734A L4728 package DL-41 l4746 l4745 L4749 Contextual Info: DATA SHEET DL4728A~DL4764A SURFACE MOUNT ZENER DIODES 3.3 to 100 Volts VOLTAGE POWER MELF/DL-41 1.0 Watts Unit : inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance .110(2.8) .102(2.6)DIA. • In compliance with EU RoHS 2002/95/EC directives	Original	DL4728A DL4764A MELF/DL-41 2002/95/EC DL-41 MIL-STD-750, L4762A L4763A L4764A DL-41 package DL-41 DL4764A L4734A L4728 package DL-41 l4746 l4745 L4749	PDF
DL-5032-001 Abstract: RLT8340G Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8340G TECHNICAL DATA DL-5032-001 High Power Infrared Laserdiode Structure: GaAlAs double heterostructure Lasing wavelength: 830 nm typ.	Original	RLT8340G DL-5032-001 DL-5032-001 RLT8340G	PDF
DL4735A Abstract: DL4731A DL4732A DL4733A DL4734A DL4736A DL4737A DL4738A DL4764A DL-41 package Contextual Info: DL4731A thru DL4764A ZENER DIODE REVERSE VOLTAGE - 4.3 to 100 Volts FEATURES DL - 41 ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ●Vz-tolerance±5% .110 2.8 .102(2.6) .020(0.5) .012(0.3) .020(0.5) .012(0.3) .216(5.5)	Original	DL4731A DL4764A Tamb50 DL4758A DL4759A DL4760A DL4761A DL4762A DL4763A DL4735A DL4732A DL4733A DL4734A DL4736A DL4737A DL4738A DL4764A DL-41 package	PDF

DL-41 PACKAGE Search Results

DL-41 PACKAGE Result Highlights (5)

DL-41 PACKAGE Datasheets Context Search

zener 4744

MSM514400DL

MSM514102D

MSM514100D

MSM514400D

MSM514100DL

SQJ28-P-400-127

S14400

bq785

diodes 1N34A color

DO-214 melf

DL-41 package

L4760

4735 zener

DL-41

L4760

DL-41 package

DL-5032-001

DL4735A