DL5032001 Search Results

PO40

Abstract: 2 Wavelength Laser Diode sanyo DL-5032-001
Contextual Info: INFRARED LASER DIODE DL-5032-001 Features Ver.2 Nov. 1999 Package Tolerance : ±0.2 Unit : mm 0 φ9.0−0.03 φ5.35 ・Lasing wavelength : 830 nm (Typ.) ・Low threshold current : Ith = 30 mA (Typ.) ・High output power : 30 mW φ4.75±0.15 φ2.1

7580

Abstract: AN 7580 circuit diagram DL-5032-001 AN 7580 DL5032001
Contextual Info: Ordering number : ENN7580 Infrared Laser Diode DL-5032-001 DL-5032-001 Infrared Laser Diode Features Package Dimensions • Lasing wavelength • Low threshold current • High output power Tolerance : ±0.2 : mm Unit 9.0-0.03 : 830 nm Typ. : Ith = 30 mA (Typ.)

Contextual Info: INFRARED LASER DIODE DL-5032-001 Features Ver.2 Nov. 1999 Package Tolerance : ± 0.2 Unit : mm ø9.0 - 0.03 ø5.35 • Lasing wavelength : 830 nm (Typ.) • Low threshold current : Ith = 30 mA (Typ.) • High output power : 30 mW ø4.75± 0.15 ø2.1 Effective window diameter 1.0min.

Contextual Info: www.lasercomponents.com Issue: 03/07 / V1 / HW / sanyo/ dl-5032-001.pdf LASER COMPONENTS GmbH Werner-von-Siemens-Str. 15, 82140 Olching, Germany, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com

DL-5032-001

Abstract: RLT8340G
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8340G TECHNICAL DATA DL-5032-001 High Power Infrared Laserdiode Structure: GaAlAs double heterostructure Lasing wavelength: 830 nm typ.