DM51 Search Results

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

DM51

Contextual Info: 51 取 扱 説 明 書 この度はセイコーデジタルメトロノーム DM51 をお買い上げいただき誠にありがとうございます。ご使用の際は本説明 書をよくお読みいただき、正しい使い方で末永くご愛用下さいますようお願いいたします。お読みになった後は、使用さ

Contextual Info: DM511 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)50m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC)

C3641

Contextual Info: DM5160 1 960H and 720H 1 channel NTSC/PAL Decoder 1 DAVICOM Semiconductor, Inc. DM5160 960H and 720H 1 channel NTSC/PAL Decoder 23431567741 Preliminary Version: DM5160-DS-P01 February 27, 2013 Preliminary Doc No: DM5160-DS-P01 February 27, 2013 1 DM5160 960H and 720H 1 channel NTSC/PAL Decoder

Contextual Info: DM5150 720H 1 channel NTSC/PAL Decoder 1 1 1 DAVICOM Semiconductor, Inc. DM5150 720H 1 channel NTSC/PAL Decoder 23431567741 Preliminary Version: DM5150-DS-P01 February 27, 2013 Preliminary Doc No: DM5150-DS-P01 February 27, 2013 1 DM5150 720H 1 channel NTSC/PAL Decoder1

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

16656

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2434 Nov-95 9534 C4 CARSEM DM512004AAC1 1.2µ OX/NI 03 PR-35 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-16613, P-16655 READPOINT

16889

Abstract: B/TDA 16840
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jan-96 9552 A6 CARSEM DM510561AAA 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

Contextual Info: Combo D D Subminiature Cable Size 8 Loose Contacts — High Voltage — Straight Plug 18,64 (.734) REF INSULATOR RING, RETAINING For tooling, see page 88. Part Number Gold over Ni DM51157 Part Number 50Ȗ in. Gold DM51157-8 Wire Size 20 AWG Part Number

dm5160

Contextual Info: DM5160 960H and 720H 1 channel NTSC/PAL Decoder DAVICOM Semiconductor, Inc. DM5160 960H and 720H 1 channel NTSC/PAL Decoder DATA SHEET Preliminary Version: DM5160-DS-P01 September 25, 2013 Preliminary Doc No: DM5160-DS-P01 September 25, 2013 1 DM5160 960H and 720H 1 channel NTSC/PAL Decoder

DM51

Contextual Info: DM51 Thank you for purchasing the SEIKO DIGITAL METRONOME DM51. Carefully read this instruction manual before using your DM51 as proper use is important to ensure the life of the product. Store this instruction manual in a place that is readily accessible and refer to it regularly.

CARSEM

Abstract: DS2434
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2434 Feb-96 9537 C4 CARSEM DM512002AAD 1.2µ OX/NI 03 PR-35 STRESS/JOB NO. Infant / High voltage Life 125°C, 7.0 V. P-16958, P-17018 READPOINT

Contextual Info: Enhanced IVfemoiy Systems be. DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features A rchitecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four s tiv e s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

gigabyte 945

Abstract: D0-35 30 pin 9-bit simm memory
Contextual Info: Enhanced Memory Systems Inc. Features DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Architecture The DM512K36ST6 achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a

Contextual Info: Enhanced Memory Systems Inc. DM512K32SmM512K36STBMultibankEDO 512Kbx 32/512Kbx 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four Actives Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced IVfemoiy Systems Inc. DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four stive s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

DM51157-8

Abstract: DM51157 DM51155-7 DM5115
Contextual Info: Combo D/European Version D Subminiature Loose Contacts Size 8 – High Voltage, Straight Plug 18,64 REF Insulator INSULATOR Ring, RING,Retaining RETAINING Part Number Gold over Nickel Part Number 1,27 µm Gold Wire Size AWG DM51157 DM51157-8 20 Receptacle

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

D0-35

Contextual Info: DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM512K36ST achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a multi-layer substrate. Four

Contextual Info: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

PLCC 68 intel

Contextual Info: 8x931 AA, 8x931 HA USB PERIPHERAL CONTROLLER 1.0 ABOUT THIS DOCUMENT 1.2 This data sheet contains advance inform ation about Intel’s 8x931 A A and 8x931 HA Universal Serial Bus peripheral controllers, based on the MCS 51 peripheral controller, which includes a functional

DDE50SA197

Abstract: DAM-11W1S-OL2-A197 DE9S-0L2-A197 DE9S-1AON-A197 M24308 DDM24W7SA197 DCMC37SJA197 DBMP25PJK87 DBA13W3PK87F0 DEMG9PJK87
Contextual Info: D Subminiature Connectors D Subminiature The ITT Cannon D Subminiature family of connectors has grown to include a wide variety of styles, options and accessories and is often the most economical Contents Contents Page General Application D Subminiature Connectors

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

AN243

Abstract: DM5101 AN240 ALVT16245 Philips high frequency bipolar transistor with Ft ALVT 74lvt244 Philips schottky transistor spice
Contextual Info: INTEGRATED CIRCUITS AN243 LVT Low Voltage Technology and ALVT (Advanced LVT) Author: Tinus van de Wouw Philips Semiconductors January 1998 Philips Semiconductors Application note LVT (Low Voltage Technology) and ALVT (Advanced LVT) AN243 Author: Tinus van de Wouw, Philips Semiconductors, Nijmegen