DMOS FET Search Results

DN3145

Abstract: DN3145N8 DATE CODE FOR SUPERTEX
Contextual Info: DN3145 Initial Release N-Channel Depletion-Mode Vertical DMOS FETs Features Advanced DMOS Technology ❏ High input impedance These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces

Contextual Info: ir e s ft DMCD1 DIE N-Channel Depletion-Mode Lateral DMOS FETs The DMCD is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating

SD2100

Contextual Info: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the

FAST DMOS FET Switches n-CHANNEL

Abstract: fet free mos 926 FAST DMOS FET Switches p-CHANNEL VC0106 FAST DMOS FET Switches FET P-Channel Switch P-Channel Enhancement FET P-Channel Enhancement Mode Vertical DMOS FET VC0106N6
Contextual Info: VC0106 Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) Q1 + Q2 or Q3 + Q4 60V 11Ω Order Number / Package 14-Pin P-Dip VC0106N6 Features Advanced DMOS Technology • 4 independent channels These enhancement-mode (normally-off) DMOS FET arrays

diode characteristics

Abstract: n-channel fet n-channel mosfet transistor VN03 cgs diode
Contextual Info: DMOS Applications DMOS Application Note AN–D1 3 DMOS FET Electrical Performance The electrical behavior of MOSFETs has been explained by numerous authors. A different, and nontraditional way of viewing their behavior arises when the device structure is closely examined. The source and body regions comprise one side of a diode,

DN2640

Abstract: DN2640N3 DN2640ND
Contextual Info: DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven

TN0702N3

Abstract: TN0702
Contextual Info: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven

ultra FAST DMOS FET Switches

Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
Contextual Info: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET

Contextual Info: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

DN2640

Abstract: DN2640N3 DN2640ND
Contextual Info: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven

Contextual Info: Product Summary Sheet TN2640 N-Channel Enhancement-Mode DMOS FET Low Threshold DMOS Technology Applications ! DC-DC converters ! Solid state relays ! Ultrasound pulsers ! Telecom switches ! Photo voltaic drivers ! Analog switches Switching Waveforms and Test Circuit

Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing

Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing

Contextual Info: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Supertex inc. TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a

marking oc diode sot89

Contextual Info: Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

fet to92

Abstract: D-PAK package FAST DMOS FET Switches n-CHANNEL FAST DMOS FET Switches improves TN2640 TN2640K4 TN2640LG TN2640N3 DMOS small signal
Contextual Info: Product Summary Sheet TN2640 N-Channel Enhancement-Mode DMOS FET Low Threshold DMOS Technology Applications ! DC-DC converters ! Solid state relays ! Ultrasound pulsers ! Telecom switches ! Photo voltaic drivers ! Analog switches Switching Waveforms and Test Circuit

Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

voltage drop circuit from 220V to 10V

Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This

Contextual Info: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

e041

Contextual Info: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces

sot 23 x 316

Abstract: fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23
Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This