E041 Search Results

B0287

Abstract: bo207 mbb0207
Contextual Info: Fixed Resistors Leaded P r e c i s i o n and High P r e c i s i o n M e t a l Film c o l o r b an de d T echnology / M etal Film BO207 B0287 E0414 5063JD-J 5063JD-J 00204 00207 0414 0204 0204 5%, 1% 5%, 1% 5%, 1% 0.5%, 0.25% 0.5%, 0.25% 0.5%, 0.25% 0.10%

saa 1900

Contextual Info: EUROPEAN POWER SUPPLIES © ® CB—CERTIFICATE INPUT: 220-230 VAC/50 Hz DC OUTPUT AC OUTPUT MODEL NO. OUTPUT VOLTAGE VDC CURRENT OUTPUT mA UNIT SIZE MODEL NO. E0330BO E0360BO * E0410BT E0430BO E0460BO * E0610BT E0630BL E0650BL E0660BO E061ABT E0612ABO

MEGGER

Abstract: BS7430
Contextual Info: AVO INTERNATIONAL MEGGER9 DETS/4D and DET5/4R • Simple, fully automatic operation • Choice of three or four terminal measurement • Autoranging from 10 mQ to 20 k Q • Tests to BS7671, BS7430, BS6651 and VD E0413 • High tolerance to spike resistance helps testing

lm4070

Abstract: E0415
Contextual Info: These drawings and specifications are the property of Densitron Corporation and may not be reproduced, copied or used without written permission 1. 2. 3. 4. REVISIONS REV DESCRIPTION DATE APPROVED B E0415 Specification subject to change without notice. All dimensions and specifications apply to standard modules. This information may vary for modules with optional

philips thermistor 2322 642

Abstract: varistor 593 ph LM 2222 2222 031 capacitor philips philips thermistor 2322 640 philips resistor CR25 thermistor 2322 662 98 Philips 3188 capacitor 295 v 595 BC varistor varistor 594 ph 460 V
Contextual Info: Series Index Series Description A A .<' a i Ceram ic Cap 24 HRC02 SM D R es s ror 90 PHÜ5U 'A'irev‘«c jn d R e sistof A02Û4 Resisto? 94 H RCH SM D Res.st.-.r 90 PHQ5V W ii'ew o.tnii R csisiO ’ “9 ACÛ1 W uew ou na Resistor 97 HRC12 SM D R es'sm r

transistor marking code 12W SOT-23

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

Contextual Info: Supertex inc. VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

B0728

Abstract: 125OC TN2640 TN2640ND sitn 620
Contextual Info: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP0620

Abstract: TP2520ND VF25 6 PIN case mos fet p-channel sitp0
Contextual Info: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input

VN10K

Abstract: VN0106N3 VN10KN3-G sivn
Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

SiTN

Abstract: TN0106 TN0106N3-G TN1506NW VF15
Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006SHM3 • AEC-Q101 qualified, meets JESD 201 class 1A

Contextual Info: New Product VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current VS-ETH3006SHM3

m077

Contextual Info: R1514x Series AEC-Q100 Grade2 Certified 150 mA Voltage Regulator Wide Input Voltage Range for Automotive Applications NO. EC-152-140220 OUTLINE The R1514x is a CMOS-based positive voltage regulator (VR) IC featuring 150 mA output current. It is specifically designed for automotive applications. The R1514xxxxB has features of high input voltage and

SSP3N80

Abstract: CM 502 SSP3N70 MOSFET 30A 700V
Contextual Info: N-CHANNEL POWER MOSFETS SSP3N80/70 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

sitn

Abstract: TN0702N3-G
Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical)

b0613

Contextual Info: Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: DECchip 21171 Core Logic Chipset Technical Reference Manual Order Number: EC-QE18A-TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts aam i3t. 0 0 3 3 7 3 3 0 22 Preliminary—Subject to Change Ju ne 1995 W hile D igital believes th e inform ation in th is publication is correct as of th e d ate of publication,

8E89

Contextual Info: お使いになる前に 取扱説明書 基本操作 電話をかける／受ける 文字入力 電話帳 メール 音・表示・照明の設定 カレンダー セキュリティ 便利な機能 ウィルコムの各種サービス データフォルダ

EDS1216AATA-75E

Abstract: EDS1216AATA EDS1216AATA-75-E
Contextual Info: DATA SHEET 128M bits SDRAM EDS1216AATA 8M words x 16 bits Description Pin Configurations The EDS1216AATA is a 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.

Contextual Info: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6ABSA 64M words x 64 bits, 2 Ranks Features The EBE52UD6ABSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write

Contextual Info: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

TN1L

Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage