DO-35 MARKING 12C 2 Search Results

IRLIZ34G

Abstract: SiHLIZ34G SiHLIZ34G-E3
Contextual Info: IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V

SiHLIZ34G

Abstract: IRLIZ34G SiHLIZ34G-E3
Contextual Info: IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V

IRL540

Abstract: SiHL540 SiHL540-E3 IRL540PBF
Contextual Info: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive

IRL540

Abstract: st 8550d SiHL540 SiHL540-E3
Contextual Info: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive

SiHLIZ34G

Abstract: IRLIZ34G SiHLIZ34G-E3
Contextual Info: IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V

zener gdz marking

Contextual Info: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA

Contextual Info: TLC5928 SBVS120E – JULY 2008 – REVISED JANUARY 2011 www.ti.com 16-Channel, Constant-Current LED Driver with LED Open Detection Check for Samples: TLC5928 FEATURES APPLICATIONS • • • • 1 23 • • • • • • • • • • • 16 Channels, Constant-Current Sink Output

IRL540

Abstract: SiHL540 SiHL540-E3
Contextual Info: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive

IRL540

Abstract: irl54
Contextual Info: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive

IRL540

Contextual Info: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive

Contextual Info: TLC5928 SBVS120E – JULY 2008 – REVISED JANUARY 2011 www.ti.com 16-Channel, Constant-Current LED Driver with LED Open Detection Check for Samples: TLC5928 FEATURES APPLICATIONS • • • • 1 23 • • • • • • • • • • • 16 Channels, Constant-Current Sink Output

4C3 zener diode

Abstract: NATIONAL SEMICONDUCTOR MARKING CODE 277 9c1 zener diode zener 6c2 marking code ZENER 5B1 zener diode 5c1 zener diode marking code 6C8 zener 5c1 TLZ10D
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead Pb -free component Component in accordance to RoHS 2002/95/EC

4C3 zener diode

Abstract: Zener Diode 4C3 zener diode 2v4
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC

IRF644PBF

Abstract: IRF644 SiHF644-E3 SiHF644 diode 330
Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration

SiHLZ34

Abstract: IRLZ34 SiHLZ34-E3
Contextual Info: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V

IRFIBC30G equivalent

Abstract: IRFIBC30G SiHFIBC30G SiHFIBC30G-E3
Contextual Info: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRFI644G

Abstract: SiHFI644G SiHFI644G-E3
Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRFP264

Abstract: SiHFP264
Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRLZ34

Abstract: SiHLZ34 SiHLZ34-E3
Contextual Info: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFIBC30G

Abstract: IRFIBC30G equivalent SiHFIBC30G SiHFIBC30G-E3
Contextual Info: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

4C3 zener diode

Abstract: 5c1 zener diode MArking 3A0 9c1 zener diode 6b2 zener TLZ8V2C Zener Diode 4C3 TLZ10 TLZ10A TLZ10C
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead Pb -free component Component in accordance to RoHS 2002/95/EC

IRFSL4710

Abstract: AN1001 AN-994 IRFS4710 IRFB4710 SL4710 IRFB4710PBF
Contextual Info: PD- 94950 IRFB4710PbF IRFS4710 IRFSL4710 Applications l High frequency DC-DC converters VDSS l Motor Control 100V l Uninterrutible Power Supplies l Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits l Low Gate-to-Drain Charge to Reduce

zener diode 2v4

Abstract: zener diode 6c2 diode glass 5b6
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC