SIHFI644G Search Results

SIHFI644G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFI644G Abstract: SiHFI644G SiHFI644G-E3 S-81290-Rev Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI644G, SiHFI644G O-220 11-Mar-11 IRFI644G SiHFI644G-E3 S-81290-Rev	PDF
SiHFI644G Abstract: IRFI644G Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI644G, SiHFI644G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI644G	PDF
IRFI644 Abstract: AN609 IRFI644G SiHFI644G Contextual Info: IRFI644G_RC, SiHFI644G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFI644G SiHFI644G AN609, 06-May-10 IRFI644 AN609	PDF
IRFI644G Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI644G, SiHFI644G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI644G	PDF
IRFI644G Abstract: SiHFI644G SiHFI644G-E3 Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI644G, SiHFI644G O-220 18-Jul-08 IRFI644G SiHFI644G-E3	PDF
IRFI644G Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI644G, SiHFI644G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFI644G	PDF
IRFI644G Abstract: SiHFI644G Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI644G, SiHFI644G O-220 12-Mar-07 IRFI644G	PDF