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    MYXB21200-20GAB

    Abstract: silicon carbide
    Text: SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low R on • High voltage 1200V isolation in a small package


    Original     		PDF MYXB21200-20GAB 210OC Double1200 MYXB21200-20GAB silicon carbide

    MYXM21200-20GAB

    Abstract: silicon carbide
    Text: SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low RDS on • High voltage 1200V isolation in a small package


    Original     		PDF MYXM21200-20GAB 210OC O-259 Double1200 MYXM21200-20GAB silicon carbide