DQ30 Search Results

TSD5MG40V

Abstract: STHV102 TSD5MG40F sthv QG30S
Contextual Info: 30E D • 71S1SB7 DQ3058b H T '- S f i- lS SGS-THOMSON s s . CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE S-THOMSON N TYPE V dss Ros on Id TSD5MG40F/V 1000 V 0.7 n 17 A ■ . ■ ■ ■ ■ . « TSD5MG40F TSD5MG40V HIGH CURRENT POWER MOS MODULE

EM542323TQ-11

Abstract: TQFP 14X20
Contextual Info: EtronTech EM542323 2.5V/3.3V I/O 64K x 32 Pipelined Burst SRAM Preliminary 9/97 • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT # VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2

transistor s72

Abstract: S72 transistor BUK436-200A BUK436-200B buk436
Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE ]> • bbS3T31 DQ304b5 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

LD 7523 GS

Abstract: transistor gc 301 ld 7523 IRFK4H150 TRANSISTOR AC 530 LD+7523+GS
Contextual Info: 3DE » • 7 ^ 2 3 7 DQ3072Ö T SCS-THOMSON ¡ H ü « ! 1 R F K 4 H 1 5 0 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TY P E IR FK4H 150 . . ■ ■ V dss RDS on Id 100 V 0.014 £2 145 A HIGH CURRENT POWER MODULE VERY LOW Rth JUNCTION TO CASE

EM531323-5

Abstract: TWS - 315
Contextual Info: EtronTech Em531323 32K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9

EM532323Q-6

Abstract: DQ3225
Contextual Info: EtronTech EM532323 64K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9

tk 69

Contextual Info: DQP3 DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 VDD VDD VDD VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 DQP4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin LQFP 20 mm x 14 mm body

A1841

Contextual Info: A B C D E A[0.20] A[0.20] POWER INPUT OPTION DQ[0.31] DQ[0.31] +5V2 +5V1 +5V1 3.3V1 VCC 4 4 3_3V 1 3_3V 2 R1 0603 +5V1 R2 0603 +5V2 JP1 RESET CE0 CE1 CE3 CE2 WE2 OE CE0 CE1 CE3 CE2 DQ23 DQ22 DQ21 DQ20 DQ19 DQ18 DQ17 DQ16 3 WE3 DQ31 DQ30 DQ29 DQ28 DQ27

TM4SN64EPN10

Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Contextual Info: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •

Contextual Info: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles

TC5117405

Contextual Info: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3610B0AS/ASG is a 1,048,576 words by 36 bits dynamic RAM module which assembled 2 pcs of TC5118180AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 18 bits dynamic RAM module, by means

44460D

Abstract: BK36C-80
Contextual Info: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:

BC6MA

Abstract: thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70
Contextual Info: TOSHIBA THM3640F0BS/BSGW70 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ and 1 pc of TC5117440BSJ on the printed circuit board. This module is optimized for application to the systems which are

K557

Abstract: TC511000Aj THM361020S-80 THM361020S thm361020
Contextual Info: W\ Ut -IKUWH'i1!'11-iJHii - - - : — THM361020S-80, 10 THM361020SG-80, 10 1,048,576 W O R D S X 36 BIT D Y N A M IC RAM M O DULE DESCRIPTION The THM36102CS is a 1,048,576 words by 36 bits dynamic RAM module which assembled 8 pcs of TC514400J and 4 pcs of TC511000AJ on the printed circuit board. The THM361020S can be as well

Contextual Info: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

TC514256

Contextual Info: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density

tc516

Contextual Info: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

jeida dram 88 pin

Abstract: 88pins toshiba dram jeida dram card 5v 88 pins dram card
Contextual Info: Introduction D R A M ^fe TYPICAL DRAM CARD APPLICATIONS Typical DRAM memory card applications include portable computers, fax machines, electronic instruments, printers and PDAs. THE TOSHIBA DRAM PRODUCT LINE UP Toshiba has migrated to the 88-pin standard, which has replaced the older 38- and 60-pin DRAM cards. Toshiba

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

simm EDO 72pin

Contextual Info: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.

Contextual Info: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board