BUK436 Search Results

HA 100B

Abstract: BUK436-100A BUK436-100B BUK436
Contextual Info: BUK436-100A BUK436-100B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope, me device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT93 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance BUK436 I* r lol °DS(ON) PIN CONFIGURATION

BUK436

Abstract: BUK436-200B 200B iran BUK436-200A
Contextual Info: Philips Components BUK436-200A BUK436-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Pow er Supplies SM PS , motor control, welding,

Contextual Info: BUK436-1000B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)30 I(D) Max. (A)3.1 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100 IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

BUK436-50B

Abstract: BUK436-50A 7725A
Contextual Info: Philips Components BUK436-50A BUK436-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect power transistor in a lastic envelope. he device is intended for use in Switched M ode Pow er Supplies S M P S , motor control, welding,

BUK436-50A

Abstract: BUK436-50B SOT93 package
Contextual Info: N AMER P H I L I P S / D I S C R E T E HSE D Hi bfci53ci31 0 0 2 0 2 0 5 T Hi PowerMOS transistor BUK436-50A BUK436-50B T -3 « M GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic envelope. The device is intended to r use in

BUK436-1000B

Contextual Info: Product Specification Philips Semiconductors BUK436-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BUK436-800A

Abstract: BUK436-800B BUK456-800A
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK456-1000A

Abstract: BUK456-1000 BUK436W-1000B BUK456-100 to247 f BUK456-1000B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel fntancam entpiode field-effectporor transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

0030456

Abstract: 100-P BUK436-60A BUK436-60B
Contextual Info: N AUER P H I L I P S / D I S C R E T E J> b^E • bbSBTai 0D3D455 Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

MN1 transistor

Abstract: BUK436-200B LTO 100 F BUK436-200A
Contextual Info: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK436-100A

Abstract: BUK436-100B
Contextual Info: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

c17f

Abstract: IE-02 BUK436-100A BUK436-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in

Mosfet catalogue

Abstract: mosfet 200A buk444 200B 220AB
Contextual Info: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs P O W E R S E M IC O N D U C T O R S POWERMOS TRANSISTORS INCLUDING TOPFETS ^D S ^ D S o n (V) (O) 100 100 0.9 1.1 200 200 200 200 200 200 200 200 200 200 200

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BUK446-800B

Abstract: BUK551-100A BUK583 BUK555 600b BUK5
Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B

Contextual Info: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effed power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

BUK436-60A

Abstract: 134 T31 100-P BUK436-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in