DQ444 Search Results

Contextual Info: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin

Contextual Info: TOSHIBA- H ^7240 DGíñSbl SEL • THM72V4030BTG-60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTH M 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC51V16400BST on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large

VDDSPD

Abstract: IC PIN CONFIGURATION OF 74 47
Contextual Info: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability

W3DG6430V-D2

Contextual Info: White Electronic Designs W3DG6430V-D2 PRELIMINARY* 256MB - 32M x 64 BUFFERED SDRAM MODULE FEATURES DESCRIPTION Burst Mode Operation The W3DG6430V is a 32M x 64 synchronous DRAM module which consists of sixteen 32Mx4 SDRAM components in TSOP II package, three very high speed

SL72B4C16M4F-A60V

Abstract: Dram 168 pin EDO buffered 0212M
Contextual Info: SL72B4C16M4F-A60V 16M X 72 Bits DRAM 168-Pin DIMM with EDO, ECC , and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns The SiliconTech SL72B4C16M4F-A60V is an 16M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM).

SL64G4B4M2E-A60

Contextual Info: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech

A0-A12

Contextual Info: SL72U4C16M8F-AxxV 16M X 72 Bit 128MB DRAM 168-Pin Unbuffered DIMM with EDO and ECC FEATURES • • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 13ns 84ns 20ns SL…-A60V 60ns 15ns 104ns 25ns

Contextual Info: SL72B4B4M4F-A60V 4M X 72 Bit DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns 110ns The SiliconTech SL72B4B4M4F-A60V is a 4M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM). The module

0244M

Abstract: SL64U4B4M2E-A60V
Contextual Info: SL64U4B4M2E-A60V 4M X 64 Bit 32MB DRAM 168-Pin Unbuffered DIMM with EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL64U4B4M2E-A60V is a 4M x 64 bit Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). This

CDC2509

Abstract: AE CX0 600
Contextual Info: Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S3320T is a 32M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: STI7216207D1 -xxVG 168-PIN DIMMS 16M X72 Bit DRAM DIMM with EDO Mode and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC Vc VlPC STI.-60VG 60ns 20ns 110ns 30ns STI.-70VG 70ns 25ns 130ns 33ns EDO Mode operation CAS-before-RAS refresh capability

Contextual Info: SDRAM MODULE Preliminary KMM375S3320T Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 Preliminary KMM375S3320T SDRAM MODULE KMM375S3320T SDRAM DIMM

A1-A10

Contextual Info: SL72B6C4M2F-AxxV 4M X 72 Bits DRAM 168-Pin DIMM with EDO Mode and ECC 2K Refresh FEATURES • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60V 60ns 20ns 110ns 30ns SL…-A70V 70ns 25ns 130ns 33ns The SiliconTech SL72B6C4M2F-AxxV is a 4M x 72 bits Dynamic

transistor CC 11 A

Contextual Info: SL72B4B8M4F-AxxV 8M X 72 Bits 64MB DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60V 60ns 20ns 110ns 30ns SL…-A70V 70ns 25ns 130ns 33ns The SiliconTech SL72B4B8M4F-AxxV is a 8M x 72 bits Dynamic

PC200

Abstract: PC2100 SL72E4H32M4M-A75DW SL72E4H32M4M-A75EW
Contextual Info: SL72E4H32M4M-A###W Preliminary* 32M X 72 Bits 256MB DDR SDRAM 184-Pin Registered DIMM ECC (PC1600/PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC1600/PC2100 Compliant (PC266A 133MHz—7.5ns@CL=2) (PC266B 133MHz—7.5ns@CL=2.5)

DM 024

Abstract: PC200 RE36 SL64A4L128M8L-A10DW SL64A4L128M8L-A75DW SL64A4L128M8L-A75EW U28 113 Ck19 1604H
Contextual Info: SL64A4L128M8L-A###W 128M X 64 Bits 1GB 200-Pin DDR SDRAM SO-DIMM (PC1600/PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A4L128M8L-A###W is a 128M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

HMD4M64D16EV

Abstract: HMD4M64D16V
Contextual Info: HANBiT HMD4M64D16V 32Mbyte 4Mx64 Fast Page Mode 4K Ref. 3.3V, DIMM 168 pin Part No. HMD4M64D16V GENERAL DESCRIPTION The HMD4M64D16V is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16V consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOP 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or

LA 7652

Contextual Info: M302571 DQMMMST TMb I I HAS HARRIS S E M I C O N D U C T O R CD4000BMS, CD4001BMS CD4002BMS, CD4025BMS HARRIS SEMICOND SECTOR SñE J> CMOS NOR Gate December 1992 T 'H Pinouts Features CD4000BMS • High-Voltage Types 20V Rating • Propagation Delay Tim e

Contextual Info: CELESTICA 4M x 72 ECC EDO BUFFERED DIMM FEATURES • • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, P Release 5 No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS

HMD4M64D16E

Contextual Info: HANBiT HMD4M64D16E 32Mbyte 4Mx64 EDO Mode 4K Ref. 5V, DIMM 168 pin Part No. HMD4M64D16E GENERAL DESCRIPTION The HMD4M64D16E is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16E consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or

HMD4M72D18EG

Abstract: HMD4M72D18EG-6
Contextual Info: HANBit HMD4M72D18EG 32Mbyte 4Mx72 EDO Mode 4K Ref. 5V, DIMM 168 pin Part No. HMD4M72D18EG-6 GENERAL DESCRIPTION The HMD4M72D18EG is a 4Mx72bits Dynamic RAM high density memory module. The HMD4M72D18EG consists of eighteen CMOS 4Mx4bits DRAMs in SOJ/TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or

Contextual Info: SDRAM MODULE Preliminary KMM377S3227BT1 Revision History Revision 4 May 1998 - CLK input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. REV. 5 July 1998 Preliminary KMM377S3227BT1 SDRAM MODULE KMM377S3227BT1 SDRAM DIMM (Intel 1.0 ver. Base)

SL72U4B4M4F-A60V

Contextual Info: SL72U4B4M4F-A60V 4M X 72 Bits 32 MB DRAM 168-Pin Unbuffered DIMM with EDO and ECC FEATURES • Performance range: tRAC tCAC tRC 60ns • • • • • • • • • • GENERAL DESCRIPTION 15ns The SiliconTech SL72U4B4M4F-A60V is an 4M x 72 bits Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM)

Dram 168 pin EDO buffered

Contextual Info: SL72B4C32M4F-B50VI 32M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES • Performance range: tCAC tRC tRAC 50ns • • • • • • • • • • GENERAL DESCRIPTION 18ns 90ns The SiliconTech SL72B4C32M4F-B50VI is an 32M x 72 bit Dynamic RAM DRAM Dual In-line Memory Module (DIMM).