DRAM 4M X 8 Search Results

A43L4616

Abstract: RA12
Contextual Info: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM

Contextual Info: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM

hynix HY57V28820HCT-H

Contextual Info: HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev. 0.2 / Aug. 2001 1 HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory

KMM5324100V

Contextual Info: KMM53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100V consist of eight C M O S 4M x 4 bit

K4S280832D

Contextual Info: K4S280832D CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280832D CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM

K4S280832M

Contextual Info: K4S280832M CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832M CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM

K4S280832B

Contextual Info: K4S280832B CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832B CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM

TAPC640

Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC b-cas 153 tss
Contextual Info: White Electronic Designs WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged

K4S280832A

Contextual Info: K4S280832A CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832A CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM

A43L4616AV-7F

Contextual Info: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary

A43L4616AV

Contextual Info: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary

M404A

Contextual Info: V7SH VM43217400D.VM83217400D 4M,8Mx32-Bit Dynamic RAM Module Description The VM43217400D and VM83217400D are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617400D and each in a standard 24/26 pin plastic SOJ packages. Decoupling capacitors are mounted adjacent to each DRAM

Contextual Info: VM43217400D,VM83217400D 4M,8M x 32 - Bit Dynamic RAM Module VIS Description The VM43217400D and VM83217400D are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617400D and each in a standard 24/26 pin plastic SOJ packages. Decoupling capacitors are mounted adjacent to each DRAM

Contextual Info: WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SDRAM: 100 MHz The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in a

Contextual Info: HYUNDAI HYM584000 Series SEMICONDUCTOR 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

KMM5364100-7

Abstract: Ras 1220
Contextual Info: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit

K4S640432C

Contextual Info: K4S640432C CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S640432C CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM

DRAM 1M X 8

Abstract: DRAM DRAM 1M
Contextual Info: SIEMENS Packing Information Tape and Reel Generation Type Package Type Devices Per Reel Tape Width 4M 4M x 1 DRAM 1Mx 4 DRAM P-SOJ-26/20-5 1500 24 mm 2 5 6 k x 16 P-SOJ-40-1 P-SOJ-40-3 900 44 mm 4M x 4 DRAM P-SOJ-26/24 1500 24 mm P-TSOPII-26/24 3000 24 mm

TAPC640

Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC
Contextual Info: WED9LAPC2B16P8BC 4M x 32 SDR AM / 2M x 8 SDR AM SDRAM SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TTAPC640 APC640 A TM PORT CONTROLLER ATM DESCRIPTION FEATURES n Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in

Contextual Info: KMM5404100/G DRAM MODULES 4M x 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC tnc KMM5404100-6 60ns 15ns 110ns KMM5404100-7 70ns 20ns 130ns KMM5404100-8 80ns 20ns 150ns The Samsung KMM5404100 is a 4M bits x 40 Dynamic

K4S640432D

Contextual Info: K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S640432D CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM

K4S561632A

Contextual Info: K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM