K4S561632A Search Results
K4S561632A Price and Stock
Samsung Semiconductor K4S561632A-TL1L |
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K4S561632A-TL1L | 82 |
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Samsung Semiconductor K4S561632A-TC1H |
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K4S561632A-TC1H | 10 |
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Samsung Semiconductor K4S561632A-TC1L |
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K4S561632A-TC1L | 2 |
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Samsung Electro-Mechanics K4S561632A-TL1LIC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC |
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K4S561632A-TL1L | 29 |
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Samsung Electro-Mechanics K4S561632A-TC1LIC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC |
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K4S561632A-TC1L | 1 |
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K4S561632A Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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K4S561632A |
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256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL | Original | 127.65KB | 10 | |||
K4S561632A-TC/L1H |
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4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Original | 127.65KB | 10 | |||
K4S561632A-TC/L1L |
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4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Original | 127.65KB | 10 | |||
K4S561632A-TC/L75 |
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4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Original | 127.65KB | 10 | |||
K4S561632A-TC/L80 |
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4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Original | 127.65KB | 10 |
K4S561632A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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K4S561632AContextual Info: K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM |
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K4S561632A 256Mbit 16bit K4S561632A A10/AP | |
support samsung pc133 sdram
Abstract: pc133 SDRAM DIMM 4MX16
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PC133 144pin) M464S0424CT1-L75/C75 M464S0824CT1-L75/C75 M464S0924BT1-L75/C75 M464S1724BT1-L75/C75 M464S1654AT1-L75/C75 support samsung pc133 sdram pc133 SDRAM DIMM 4MX16 | |
Contextual Info: M464S3254AT1 PC133 SODIMM Revision History Revision 0 Jan. 2000 - PC133 First Published. Rev. 0.0 Jan. 2000 M464S3254AT1 PC133 SODIMM M464S3254AT1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION |
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M464S3254AT1 PC133 M464S3254AT1 32Mx64 16Mx16 | |
M464S1724CT2-L75
Abstract: M464S3254BT2-L75 sdram pcb gerber m464s1654* samsung M464S3254BT2 K4S561632A
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PC133 144pin M464S0424DT2-L75/C75 M464S0424ET2-L75/C75 M464S0824DT2-L75/C75 M464S0824ET2-L75/C75 M464S0924BT2-L75/C75 M464S1724CT2-L75 M464S3254BT2-L75 sdram pcb gerber m464s1654* samsung M464S3254BT2 K4S561632A | |
m464s16* samsung
Abstract: pc66 march 1999
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PC133 144pin) byte62) 128Mb C-die/256Mb M464S0424CT1-L75/C75 M464S0424DT1-L75/C75 m464s16* samsung pc66 march 1999 | |
inductor 470uH
Abstract: PXA255 jtag flash programming gp741 RP14B PXA255 Single Board Computer AUDIO JACK 3.5MM RP17B PXA255 intel 27869 intel PXA255
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PXA255 8Mx16 100Kohms C186B 015uF 28F128 inductor 470uH PXA255 jtag flash programming gp741 RP14B PXA255 Single Board Computer AUDIO JACK 3.5MM RP17B intel 27869 intel PXA255 | |
R362B
Abstract: R113B C307B C245B C268B r272b CONN-HEADER 3 pos u78b gp741 BT 217
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PXA26x nPIOIS16 09Sept02 DCPXA26x DCPXA26x R362B R113B C307B C245B C268B r272b CONN-HEADER 3 pos u78b gp741 BT 217 | |
Contextual Info: M464S3254AT1 PC133 SODIMM Revision History Revision 0 Jan. 2000 - PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S3254AT1 PC133 SODIMM M464S3254AT1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh,3.3V Synchronous DRAMs with SPD |
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M464S3254AT1 PC133 M464S3254AT1 32Mx64 16Mx16 | |
pc66 march 1999 standardsContextual Info: SERIAL PRESENCE DETECT PC133 SODIMM PC133 Unbuffered SDRAM SODIMM 144pin SPD Specification Rev. 1.2 March. 2000 Rev. 1.2 March. 2000 SERIAL PRESENCE DETECT PC133 SODIMM • Revision History [Revision 0.0] Oct. 11, 1999 Jedec based PC133 SODIMM SPD Published. |
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PC133 144pin) byte62) 128Mb C-die/256Mb M464S0424CT1-L75/C75 M464S0424DT1-L75/C75 pc66 march 1999 standards | |
Hynix Cross Reference
Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
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W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v | |
M464S3254AT1Contextual Info: PC100 SODIMM M464S3254AT1 M464S3254AT1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254AT1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
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PC100 M464S3254AT1 M464S3254AT1 32Mx64 16Mx16, 400mil 144-pin |