DRIVE MOSFET Search Results

heat sink design guide, IGBT

Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Contextual Info: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs

"MITSUBISHI HYBRID"

Abstract: hybrid
Contextual Info: Hybrid ICs Mitsubishi Hybrid ICs line-up Hybrid IC Home equipment application Motor drive Switching power supplies General use Industrial equipment application Transistor module drive MOSFET module drive IGBT module drive Motor vehicle IGBT module drive Power switching

ca3103

Abstract: 2n2222 -331 Cd4093 SiHF
Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2

02M45

Contextual Info: Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB  Structure Silicon N-channel MOSFET  Dimensions Unit : mm EMT3F Features 1) High-speed switching. 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2)

HEXFET Power MOSFET designer manual

Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent
Contextual Info: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2

UC3724N

Abstract: 2kw mosfet 2kw transformer SOIC-16 UC1724 UC1724J UC1725 UC2724 UC2724DW UC2724N
Contextual Info: UC1724 UC2724 UC3724 Isolated Drive Transmitter FEATURES DESCRIPTION • 500mA Output Drive, Source or Sink The UC1724 family of Isolated Drive Transmitters, along with the UC1725 Isolated Drivers, provide a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices

Contextual Info: UC1724 UC2724 UC3724 Isolated Drive Transmitter FEATURES DESCRIPTION • 500mA Output Drive, Source or Sink The UC1724 family of Isolated Drive Transmitters, along with the UC1725 Isolated Drivers, provide a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices

IGBT Drive Using MOSFET Gate Drivers by

Abstract: UC1724 U-127 2kw mosfet 9V 1A Transformer specification 9v 500ma transformer UC3724 UC3724N Unitrode U-127 UC1724J
Contextual Info: UC1724 UC2724 UC3724 Isolated Drive Transmitter FEATURES DESCRIPTION • 500mA Output Drive, Source or Sink The UC1724 family of Isolated Drive Transmitters, along with the UC1725 Isolated Drivers, provide a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices

Contextual Info: FSS218 Ordering number : ENA0189A N-Channel Silicon MOSFET FSS218 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

S273 diode

Contextual Info: FSS273 Ordering number : ENA0329 N-Channel Silicon MOSFET FSS273 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). zApplications

Contextual Info: 1.2V Drive Nch MOSFET RUE002N05 Dimensions Unit : mm  Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : RH Packaging specifications

RK7002BM

Contextual Info: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT Application Switching

rku SOT-23

Contextual Info: 2.5V Drive Nch MOSFET Datasheet RK7002BM Structure Silicon N-channel MOSFET Dimensions Unit : mm SST3 <SOT-23> Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKU Application Switching

tumt3

Abstract: Z diode RTF025N03
Contextual Info: RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate

FSS245

Abstract: S245
Contextual Info: FSS245 Ordering number : ENA0671 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS245 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 1.2V Drive Nch + Nch MOSFET EM6K33 Structure ilicon N-channel MOSFET Dimensions Unit : mm  Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 

EM6K33

Contextual Info: 1.2V Drive Nch + Nch MOSFET EM6K33 Dimensions Unit : mm  Structure ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 

FSS218

Abstract: S218 INVERTER motor drive SANYO
Contextual Info: FSS218 Ordering number : ENA0189A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS218 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

FSS273

Abstract: TA72 a0329 S273 diode
Contextual Info: FSS273 Ordering number : ENA0329 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS273 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

FSS248

Abstract: S248 A0679
Contextual Info: FSS248 Ordering number : ENA0679 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS248 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

RUF025N02

Contextual Info: RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate

RUF015N02

Abstract: tumt3
Contextual Info: RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 zStructure Silicon N-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate

Contextual Info: 1.2V Drive Nch + Nch MOSFET EM6K33 Dimensions Unit : mm  Structure ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 