DS 157 Search Results

TDA 11115

Abstract: ALI 3105 TCM3105 "64-pin" rockwell modem rc2324 TDA 2025 IA4054 RC2424DP tda 12004 1650M
Contextual Info: RC2424DP/DS Integral Modems Rockwell RC2424DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2424DP/DS is a 2400 bps, full-duplex, OEM, data pump modem device set. The RC2424DP/DS operates over the public switched telephone network

33CN10N

Abstract: IPP35CN10N 34cn
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

DIODE D27

Abstract: 2SC3115-TBD27 35CN10N
Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

33cn10n

Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)

33CN10N

Abstract: D27D27 33cn10 IPD33CN10N
Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G IPD33CN10N G IPP35CN10N G IPU33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)

IPB021N04N

Abstract: IEC61249-2-21 JESD22
Contextual Info: IPB021N04N OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 40 V R DS(on),max 2.1 mΩ ID 160 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

zener diode 46a

Abstract: DSBT2-S-DC12V DSBT2-S-DC24V DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550 solid state 220 volt stabilizer circuit dsbt2-s-dc5v AC DC DIGITAL ammeter diagram
Contextual Info: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts

IEC61249-2-21

Abstract: IPB030N08N3 JESD22
Contextual Info: IPB030N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for motor drive applications V DS 80 V R DS on ,max 3.0 mΩ ID 160 A • Excellent gate charge x R DS(on) product (FOM)

030N08N

Abstract: IPB030N08N3 JESD22 GS5008
Contextual Info: IPB030N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for motor drive applications V DS 80 V R DS(on),max 3.0 mΩ ID 160 A • Excellent gate charge x R DS(on) product (FOM)

STC104

Abstract: C101 STC101 G0723 datao-31 IEEE 3 bus datas G072370
Contextual Info: y za SGS-THOMSON STC101 D lM ltI© H [M ) ilO © l> PARALLEL DS-LINKT ADAPTOR ENGINEERING DATA FEATURES • High speed parallel to DS-Link converter. ■ Data-Strobe Link DS-LinkT) interface device for high speed asynchronous communications avoids the need for high speed clocks within the

sii861

Abstract: 19F590 SiI859 SiI-DS-0026-D 6Af amplifier
Contextual Info: SiI859 / SiI863 Data Sheet Silicon Image, Inc. Revision 1.2 May, 2002 SiI-DS-0026-D Silicon Image, Inc. SiI859 / SiI863 SiI-DS-0026-D Table of Contents Table of Contents . 2

Contextual Info: / = 7 S G S -T H O M S O N » » i t i » * STC101 PARALLEL DS-LINKT ADAPTOR ENGINEERING DATA FEATURES • High speed parallel to DS-Link converter. ■ Data-Strobe Link DS-LinkT interface device for high speed asynchronous communications avoids the need for high speed clocks within the

Contextual Info: +&1 6HULHV  +LJK &DS 13 +RO\ 6WRQH 0XOWLOD\HU &HUDPLF &KLS &DSDFLWRUV > +LJK &DS 13 @ +&1 6HULHV Replacement for Film Capacitor ‹ Features ‹ Applications ‰ Suitable for ADSL filter circuits, cable Modem and coupling circuits, general Telecommunication use,

1117 transistor 0340 180

Abstract: M13Q floorplan io uart vhdl MSM13Q
Contextual Info: MSM13/14Q 35µm DS 9…9/14Backup Page -1 Friday, November 21, 1997 11.17 a DATA SHEET O K I A S I C P R O D U C T S MSM13Q0000/14Q0000 0.35 µm Sea of Gates Arrays November 1997 MSM13/14Q 35µm DS 9…9/14Backup Page 0 Friday, November 21, 1997 11.17 a MSM13/14Q 35µm DS 9…9/14Backup Page 1 Friday, November 21, 1997 11.17 a

HITACHI WORKBENCH 1.01

Abstract: ALP 102 B4 i386ex i386ex intel i386 TTC 103 435 AC16 AD17 ALPS 328 TC55V1325FF-7
Contextual Info: ICs for Communications ATM Layer Processor ALP PXB 4350 E Version 1.1 Preliminary Data Sheet 09.98 DS 2 PXB 4350 E Revision History: Current Version: 09.98 Previous Version: Preliminary Data Sheet 08.97 DS 1 Page Page (in previous (in current Version) Version)

9428h

Abstract: NAD 208 PSB 21381 GP10 GP15 pmb dect wiener filter intel LGA 1150 PIN diagram GP141
Contextual Info: ICs for Communications Acoustic Echo Canceller ACE PSB 2170 Version 2.1 Preliminary Data Sheet 10.99 DS 2 Revision History: Current Version:Preliminary Data Sheet 10.99 Previous Version: DS 1 Page in previous Version Page (in new Version) Subjects (major changes since last revision)

Contextual Info: SIEMENS ICs for Communications ATM Layer Processor ALP PXB 4350 E Version 1.1 Preliminary Data Sheet 09.98 DS 2 PXB 4350 E Revision History: Current Version: 09.98 Previous Version: Preliminary Data Sheet 08.97 DS 1 Page (in previous Version) Page (in current

065N06L

Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated

IPP065N06L

Abstract: d80 DIODE PG-TO220-3 IPP063N06L 065N06L IPB063N06L IPP065N06LG
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features V DS 60 V • For fast switching converters and sync. rectification R DS on ,max 6.5 m: • N-channel enhancement - logic level ID 80 A • 175 °C operating temperature • Avalanche rated

065N06L

Abstract: IEC61249-2-21 IPB063N06L IPP063N06L PG-TO263-3-2 d80 DIODE
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated

STS2305A

Contextual Info: STS2305A Green Product S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 70 @ VGS=-4.5V -20V

065N06L

Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated