DS 469 ADJ Search Results

D773

Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Contextual Info: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

SCHB

Contextual Info: TECHNICAL DATA COAXIAL CONNECTORS FLANGE RECEPTACLE FOR .011 DIA WITH SPECIAL GASKET EMI 0 .2 9 7 * .0 0 2 7 ,5 5 * 0 .0 5 R125.941.000 Series : SMA 1 IS: 012 .061 Œ I Page Is s u e : 0746 A '(1.55: CL cu O -—. ÍD O o *£ s 1—( a a> C—Í -p rK CD -ft

Contextual Info: F-213-1 26-JUL-13 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR (0,80 mm) .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see

Contextual Info: F-213-1 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80 mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see

Contextual Info: F-211-1 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER Board Mates: ERF8 SPECIFICATIONS For complete specifications and recommended PCB layouts see

erm8

Contextual Info: F-212 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see

Contextual Info: F-211-2 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER Board Mates: ERF8 SPECIFICATIONS For complete specifications and recommended PCB layouts see

Contextual Info: /T T SCS-THOMSON SGSP316 SGSP317 “ TÆ . s s o m m i C T i M « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSs ^DS on 'd SGSP316 SGSP317 250 V 200 V 1.2 fl 0.75 fi 5A 6A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE

po111

Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
Contextual Info: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They

roger

Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Contextual Info: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and

po111

Abstract: LM7805 LM780
Contextual Info: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They

DS 469 ADJ

Abstract: type 103 capacitor, 2kv RF
Contextual Info: PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device

SCHEMATIC DIAGRAM 3.3kv

Abstract: BCP56 LM7805 PTF041501E PTF041501F ceramic capacitor 103 z 21
Contextual Info: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characaterized for CDMA and

Contextual Info: bq3287E/bq3287EA fe j BENCHMARQ Real-Time Clock RTC Module Features >• Direct clock/calendar replacement for IBfti AT-compatible computers and other applications >• Functionally compatible with the DS1287/DS1287A and MC146818A/MC146818B >• 242 bytes of general nonvolatile

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 IM335 resistor 33k ohms
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

Contextual Info: Product specification Philips Semiconductors BUK107-50GL PowerMOS transistor Logic level TOPFET For maintenance only. Do not use for design-in. DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as

Contextual Info: cnr S6E SEMTECH CORP D 5 m 613^13^ 0DG322M Tb? « S E T 30 AMP, 400 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAMETER In p u t Voltage In p u t-O u tp u t V oltage D iffe re ntia l P ow er D is s ip a tio n 1 SYM BOL MAXIMUM UNITS

b15n06v

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTB15N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an orv-resistance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata S heet TM O S V P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e-ha lf that of standard MOSFETs. This

OF IC 723 linear regulator

Contextual Info: SG723/SG723C -—. _ . 5 |U Ç D N LINEAR INTEGRATED CIRCUITS PRECISION VOLTAGE REGULATOR FEATURES DESCRIPTION This monolithic voltage regulator is designed for use with either positive or negative supplies as a series, shunt, switching, or floating regulator

74LS205

Contextual Info: / 'K -v 1 DESCRIPTION The MN5500 is a 12 Bit A/D Converter designed specifically for microprocessor applications. Internal circuitry is sup­ plied for chip select, address decoding, and the other inter­ face signals required by popular microprocessors. In most

ULTRA THIN CARD EDGE CONNECTOR OF SERIES 235

Abstract: 245-21-XXXCE-XX m42x M42X-03-XXX-X 275-00-XXXDSX-XX methode board edge connectors usa lead
Contextual Info: .050" 1.27mm Series 235 Ultra Thin Card Edge Connector DIP SOLDER TERMINALS WITHOUT MOUNTING EARS PART NUMBER LEGEND 235-21-XXXDS-XX PLATING OPTIONS 01 = .000010 GOLD IN CONTACT AREA OVER NICKEL WITH GOLD FLASH TAILS. 03 = .000030 GOLD IN CONTACT AREA OVER NICKEL WITH