DS 69 Search Results

MIL-W-85

Abstract: WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide
Contextual Info: • RECTANGULAR WAVEGUIDE SECTION CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 DS-111 Directional Couplers . .

12CN10L

Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG
Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature

12CN10L

Abstract: D345 c25 diode to220 D83a
Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature

TDA 11115

Abstract: ALI 3105 TCM3105 "64-pin" rockwell modem rc2324 TDA 2025 IA4054 RC2424DP tda 12004 1650M
Contextual Info: RC2424DP/DS Integral Modems Rockwell RC2424DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2424DP/DS is a 2400 bps, full-duplex, OEM, data pump modem device set. The RC2424DP/DS operates over the public switched telephone network

Contextual Info: RC2324DP/DS Integral Modems Rockwell RC2324DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2324DP/DS is a 2400 bps, lull-duplex, OEM, data pump modem device s e t The RC2324DP/DS operates over the public switched telephone network

DS3319

Abstract: SM-43T pl-7 DS30 DS40 PC05 PC30 PL-11 PL-13 PC2213H
Contextual Info: 84 SAMWHA ELECTRONICS POT CORES DS30~DS40 PC05~PC30 Ordering Code System PL-9 Material Core Type DS 4020 Core Size SAMWHA ELECTRONICS DS CORES DS3019D Part No. Type D2 D1 Dimensions in mm Core Set Parameters DS DS A 30.00 ±0.50 31.20 ±0.30 33.20 ±0.50 33.20 ±0.50

025n10n

Abstract: IPB025N10N3 IPB025N10N3 G IEC61249-2-21 JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

J 6920 A

Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

053N08N

Abstract: IPD053N08N3 IPD053N08N3 G JESD22 d90a
Contextual Info: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 5.3 mΩ ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature

IEC61249-2-21

Abstract: IPP06CNE8N JESD22 PG-TO220-3
Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

06cn10n

Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

025N10N

Abstract: IPB025N10N3 IPB025N10N3 G JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

06cn10n

Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

027N10N

Abstract: IPB027N10N3 IEC61249-2-21 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

IPP06CNE8N

Abstract: JESD22 PG-TO220-3
Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

06CNE8N

Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

06CN10N

Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

J 6920 A

Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

075n15n

Abstract: 072N15N infineon 075n15n IPB072N15N3 IPP075N15N3G IPP075N15N3 G IPP075N15N3 IPI075N15N3 G JESD22 PG-TO220-3
Contextual Info: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max (TO263) 7.2 mΩ ID 100 A • Very low on-resistance R DS(on)

045n10n

Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
Contextual Info: IPA045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature

J 6920

Abstract: J 6920 A
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

Diode DD100

Abstract: 900N20N 900N20NS
Contextual Info: Type BSC900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level V DS 200 V R DS on ,max 90 mΩ 15.2 ID A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on)

12CN10N

Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)

diode d39

Abstract: d39 marking 190N12NS IEC61249-2-21 JESD22
Contextual Info: BSC190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS on ,max 19 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 44 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature