DS0808 Search Results

DS1304

Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Contextual Info: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ

RF6281PCBA-41X

Abstract: MSL3-260
Contextual Info: RF62813V Multi-Band UMTS Linear Power Amplifier Module RF6281 Preliminary 3V MULTI-BAND UMTS LINEAR POWER AMPLIFIER MODULE GND VCC1A 1 VREF m VCCBIAS RoHS Compliant & Pb-Free Product Package Style: Module, 16-Pin, 4 x 4 16 15 14 13 VCC2A Features „ „ „

embedded dram timing

Contextual Info: ASIC DATA BOOK TC300 Series Embedded DRAM 2003 TC300 Series Embedded DRAM Published in December, 2003 Document ID: BDE0067A C Copyright 2003 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products.

RF MMIC MARK CODE E4

Abstract: icc 312 NBB-300 NBB-310 NBB-312 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310
Contextual Info: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation

SDSP0804

Contextual Info: Power Inductors Shielded-SMT Drum 8 x 4 mm SDSP0804 Series POWER INDUCTORS Used in high frequency DC/DC converters. Magnetically shielded for low EMI radiation. Low resistance and high energy storage. Robust base for reflow soldering. Inductance range from 1.0 µH to 100 µH.

rf6285

Abstract: ds0808
Contextual Info: RF62853V Multi-Band UMTS Linear Power Amplifier Module RF6285 Preliminary 3V MULTI-BAND UMTS LINEAR POWER AMPLIFIER MODULE Features „ „ „ Applications „ „ „ 3V UMTS Multi-Band Handsets Multi-Mode UMTS Handsets Spread-Spectrum Systems GND GND GND GND

900MHZ

Abstract: JESD22-A114 LL1608-F1N8S RF3163 RF3163PCBA-41X Model 285 MATERIAL DECLARATION inductor
Contextual Info: RF3163 RF31633V 900MHz Linear Power Amplifier Module 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Features „ 28dBm Linear Output Power „ -51dBc ACPR @ 885kHz „ 55% AMPS Efficiency „ „ „ „ 3V W-CDMA US-Cellular Handset 3V CDMA2000/1X-EV-DO USCellular Handset

J-STD-20

Contextual Info: RF3164 RF31643V 1900 MHz Linear Power Amplifier Module 3V 1900MHz LINEAR POWER AMPLIFIER MODULE „ Input Internally Matched@50Ω „ Output Internally Matched „ 28dBm Linear Output Power „ 40% Peak Linear Efficiency „ 28dB Linear Gain „ -50dBc ACPR @ 1.25MHz

Contextual Info: RF5198 RF51983 V 1950 MHz WCDMA Linear Power Amplifier Module 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE IM NC 16 15 14 13 RF IN 1 27.5dBm Linear Output Power 42% Peak Linear Efficiency „ -41dBc ACLR @ ±5MHz „ Integrated Power Detector „ HSDPA Capable

RF2103

Abstract: RF2103L
Contextual Info: RF2103L MEDIUM POWER LINEAR AMPLIFIER Package Style: SOIC-14 RF IN 1 Features       450MHz to 1000MHz Operation Up to 750mW CW Output Power 31dB Small Signal Gain Single 2.7V to 7.5V Supply 47% Efficiency Digitally Controlled Power Down Mode

800MHz CDMA Handset Circuit Diagram

Abstract: RF5144PCBA-410 IPC-SM-782 RF5144
Contextual Info: RF5144 RF5144DualBand CDMA 800MHz/190 0MHz TriMode Power Amplifier Module DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE „ „ „ VCC1 PCS VCC2 PCS VCC2 PCS VCC2 PCS VREG - PCS 1 Input/Output Internally Matched@50Ω 18 NC Bias PCS 17 NC RF IN - PCS 2

SMPS 1000 SI 24V

Abstract: C1A3B3
Contextual Info: RF6280 Preliminary POWER MANAGEMENT IC „ „ „ „ „ „ „ „ „ „ 2.5MHz PWM Switching Frequency Automatic Bypass Mode Over Temperature Shutdown Current Limit Analog Bias Control Automatic and Buffer Three Individual Fast Transient 2.85V LDOs Controls up to 3 UMTS PAs