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    DS11102 Search Results

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    DS11102 Price and Stock

    Ningbo connfly electronic CO LTD DS1110-24-04BU8

    Connector: circular; male + female; PIN: 4; 5A; IP67; 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1110-24-04BU8 99 1
    • 1 $8.75
    • 10 $7.75
    • 100 $5
    • 1000 $5
    • 10000 $5
    Buy Now

    Ningbo connfly electronic CO LTD DS1110-24-02BU8

    Connector: circular; male + female; PIN: 2; 5A; IP67; 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1110-24-02BU8 92 1
    • 1 $13.8
    • 10 $11.3
    • 100 $6.25
    • 1000 $6.25
    • 10000 $6.25
    Buy Now

    Ningbo connfly electronic CO LTD DS1110-26-02BU8A

    Connector: circular; male + female; PIN: 2; 3A; IP67; 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1110-26-02BU8A 86 1
    • 1 $19.8
    • 10 $16.2
    • 100 $9
    • 1000 $9
    • 10000 $9
    Buy Now

    Ningbo connfly electronic CO LTD DS1110-24-03BU8

    Connector: circular; male + female; PIN: 3; 5A; IP67; 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1110-24-03BU8 74 1
    • 1 $8.75
    • 10 $7.75
    • 100 $5
    • 1000 $5
    • 10000 $5
    Buy Now

    Ningbo connfly electronic CO LTD DS1110-27-7BU8

    Connector: circular; male + female; PIN: 7; 3A; IP67; 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1110-27-7BU8 62 1
    • 1 $14.4
    • 10 $12.7
    • 100 $8.2
    • 1000 $8.2
    • 10000 $8.2
    Buy Now

    DS11102 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS1110-200 Dallas Semiconductor 10-Tap Silicon Delay Line Original PDF
    DS1110-250 Dallas Semiconductor 10-Tap Silicon Delay Line Original PDF

    DS11102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3904 225

    Abstract: 2N3904 2N3904 die
    Text: 2N3904 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906


    Original
    PDF 2N3904 2N3906) MIL-STD-202, DS11102 2n3904 225 2N3904 2N3904 die

    RF3232TR13

    Abstract: RF3232
    Text: RF3232 RF3232QuadBand GSM/GPRS Transmit module with Two UMTS Ports QUAD-BAND GSM/GPRS TRANSMIT MODULE WITH TWO UMTS PORTS 3 GND 4 RFIN HB 5 GPCTRL2 RFIN LB VBATT 2 GPCTRL1 GND GPCTRL0 1 TX ENABLE GND VRAMP Package: Module 6.63mm x 5.24mm x 1.00mm 22 21 20


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    PDF RF3232 RF3232QuadBand GSM850/EGSM900/ DCS1800/PCS1900 DS111027 2002/95/EC RF3232TR13 RF3232

    MPSS100-2-C

    Abstract: RFVA1027
    Text: RFVA1027 RFVA1027Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features Small 7mm x 7mm, Multi-Chip Module Applications     Cellular, 3G and 4G Infrastructure WiBro, WiMax, LTE


    Original
    PDF RFVA1027Analog RFVA1027 731MHz 881MHz -60dBc 10dBm RFVA1027 DS111021 MPSS100-2-C

    MPSS100-2C

    Abstract: RFVA2017
    Text: RFVA2017 RFVA2017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features Applications     Cellular, 3G and 4G Infrastructure WiBro, WiMax, LTE Microwave Radio High Linearity Power Control


    Original
    PDF RFVA2017Analog RFVA2017 RFVA2017 DS111021 MPSS100-2C

    2n3904 225

    Abstract: No abstract text available
    Text: 2N3904 NPN SMALL SIGNAL TRANSISTOR NOT FOR NEW DESIGN, USE MMBT3904 Features • · · · Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available


    Original
    PDF 2N3904 2N3906) MMBT3904 MIL-STD-202, 300ms, DS11102 2n3904 225

    Untitled

    Abstract: No abstract text available
    Text: RF3233 RF3233QuadBand GPRS/Linear EDGE Transmit module with Two UMTS Ports QUAD-BAND GPRS/LINEAR EDGE TRANSMIT MODULE WITH TWO UMTS PORTS 3 GND 4 RFIN HB 5 GPCTRL2 RFIN LB VBATT 2 GPCTRL1 GND GPCTRL0 1 TX ENABLE GND VRAMP Package: Module 6.63mmx5.24mm1.0mm


    Original
    PDF RF3233 RF3233QuadBand 63mmx5 24mm1 GSM850/EGSM900/ DCS1800/PCS1900 DS111027

    Untitled

    Abstract: No abstract text available
    Text: RVA1007L RVA1007LAnalog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features Applications     Cellular, 3G and 4G Infrastructure WiBro, WiMax, LTE Microwave Radio High Linearity Power Control


    Original
    PDF RVA1007L RVA1007LAnalog 680MHz 810MHz -60dBc 10dBm RVA1007L DS111021 1007L-F14

    psf-s01-00

    Abstract: No abstract text available
    Text: FMS2016-001 FMS2016-001 High Power GaAs SP4T Switch HIGH POWER GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power


    Original
    PDF FMS2016-001 FMS2016-001 FMS2016-001SR FMS2016-001SQ FMS2016-001-EB DS111028 psf-s01-00

    Untitled

    Abstract: No abstract text available
    Text: RFVA1017 RFVA1017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features Applications     Cellular, 3G Infrastructure WiBro, WiMax, LTE Microwave Radio High Linearity Power Control


    Original
    PDF RFVA1017Analog RFVA1017 RFVA1017 DS111021

    RF3233

    Abstract: HDR-1X14 rx2 1150 rx185 RF3234 RF3234TR13 RX881 HDR1X14
    Text: RF3234 RF3234QuadBand GSM/GPRS Transmit module with ONE UMTS Port QUAD-BAND GSM/GPRS TRANSMIT MODULE WITH ONE UMTS PORT 3 GND 4 RFIN HB 5 GPCTRL2 RFIN LB VBATT 2 GPCTRL1 GND GPCTRL0 1 TX ENABLE GND VRAMP Package: Module 6.63mmx5.24mmx1.00mm 22 21 20 19 18


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    PDF RF3234QuadBand RF3234 63mmx5 24mmx1 GSM850/EGSM900 DCS1800/PCS1900 2002/95/EC DS111027 RF3233 HDR-1X14 rx2 1150 rx185 RF3234 RF3234TR13 RX881 HDR1X14

    Untitled

    Abstract: No abstract text available
    Text: RFVA1017 RFVA1017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features Applications     2 3 4 5 6 GND  7 VCC  NC  Voltage Variable Attenuator RF IN 1 VPC  1425MHz to 1550MHz


    Original
    PDF RFVA1017 RFVA1017Analog 1425MHz 1550MHz -64dBc 12dBm RFVA1017 DS111021

    Untitled

    Abstract: No abstract text available
    Text: RF2637 RECEIVE AGC AMPLIFIER Package Style: MSOP-8 Features „ Supports Basestation Applications IN+ 1 8 VCC1 „ -55dB to +51dB Gain Control Range @ 85MHz IN- 2 7 VCC2 „ Single 3V Power Supply GND 3 6 OUT+ „ -2dBm Input IP3 „ 12MHz to 385MHz Operation GAIN


    Original
    PDF RF2637 -55dB 85MHz 12MHz 385MHz RF2637 2002/95/EC DS111021

    Untitled

    Abstract: No abstract text available
    Text: RF5515 RF5515 4.9GHz to 5.85GHz Low Noise Amplifier with Enable 4.9GHz TO 5.85GHZ LOW NOISE AMPLIFIER WITH ENABLE N/C VDD Package Style: 2.2mm x 2.2mm x 0.5mm 8 7 Features    4.9GHz to 5.85GHz Operation 2.3V to 4.8V Single Supply 1.6dB Noise Figure


    Original
    PDF RF5515 85GHz RF5515 85GHz) DS111025

    DS1110-500

    Abstract: 74LS DS1010 DS1110 DS1110E J-STD-020A
    Text: Rev 0; 6/02 10-Tap Silicon Delay Line The DS1110 delay line is an improved replacement for the DS1010. It has ten equally spaced taps providing delays from 5ns to 500ns. The devices are offered in a standard 14-pin DIP, 16-pin SO, or 14-pin TSSOP. The DS1110 series delay lines provide a nominal accuracy of


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    PDF 10-Tap DS1110 DS1010. 500ns. 14-pin 16-pin DS1110-500 74LS DS1010 DS1110E J-STD-020A

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


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    PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    ATC800B5R6

    Abstract: ATC800B6R8 ATC800B120
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


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    PDF RF3931 900MHz RF3931 DS111026 ATC800B5R6 ATC800B6R8 ATC800B120

    RF3232

    Abstract: No abstract text available
    Text: RF3232 RF3232QuadBand GSM/GPRS Transmit module with Two UMTS Ports QUAD-BAND GSM/GPRS TRANSMIT MODULE WITH TWO UMTS PORTS 3 GND 4 RFIN HB 5 GPCTRL2 RFIN LB VBATT 2 GPCTRL1 GND GPCTRL0 1 TX ENABLE GND VRAMP Package: Module 6.63mm x 5.24mm x 1.00mm 22 21 20


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    PDF RF3232QuadBand RF3232 GSM850/EGSM900 DCS1800/PCS1900 2002/95/EC DS111027 RF3232

    2N3904

    Abstract: 2n3904 225 2N3906
    Text: 2N3904 NPN SMALL SIGNAL TRANSISTOR Features • · · · Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906 E A TO-92 B C Mechanical Data


    Original
    PDF 2N3904 2N3906) MIL-STD-202, 100MHz 100mA, 15000Hz 300ms, DS11102 2N3904 2n3904 225 2N3906

    Untitled

    Abstract: No abstract text available
    Text: RF3234 RF3234QuadBand GSM/GPRS Transmit module with ONE UMTS Port QUAD-BAND GSM/GPRS TRANSMIT MODULE WITH ONE UMTS PORT 3 GND 4 RFIN HB 5 GPCTRL2 RFIN LB VBATT 2 GPCTRL1 GND GPCTRL0 1 TX ENABLE GND VRAMP Package: Module 6.63mmx5.24mmx1.00mm 22 21 20 19 18


    Original
    PDF RF3234 RF3234QuadBand 63mmx5 24mmx1 GSM850/EGSM900/ DCS1800/PCS1900 DS111027 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: RFVA2017 RFVA2017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features Applications     2 3 4 5 6 GND  7 VCC  NC  Voltage Variable Attenuator RF IN 1 VPC  2260MHz to 2440MHz


    Original
    PDF RFVA2017 RFVA2017Analog 2260MHz 2440MHz -66dBc 12dBm RFVA2017 DS111021

    Untitled

    Abstract: No abstract text available
    Text: RF2637 RECEIVE AGC AMPLIFIER Package Style: MSOP-8 Features „ Supports Basestation Applications IN+ 1 8 VCC1 „ -55dB to +51dB Gain Control Range @ 85MHz IN- 2 7 VCC2 „ Single 3V Power Supply GND 3 6 OUT+ „ -2dBm Input IP3 „ 12MHz to 385MHz Operation GAIN


    Original
    PDF RF2637 -55dB 85MHz 12MHz 385MHz RF2637 2002/95/EC DS111021

    wifi lna

    Abstract: No abstract text available
    Text: RF5515 RF5515 4.9GHz to 5.85GHz Low Noise Amplifier with Enable 4.9GHz TO 5.85GHZ LOW NOISE AMPLIFIER WITH ENABLE N/C VDD Package Style: 2.2mm x 2.2mm x 0.5mm 8 7 Features    4.9GHz to 5.85GHz Operation 2.3V to 4.8V Single Supply 1.6dB Noise Figure


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    PDF RF5515 85GHz RF5515 85GHz) DS111025 wifi lna

    RFPP2870

    Abstract: No abstract text available
    Text: RFPP2870 40MHz to 1003MHz 28dB Push Pull Hybrid RFPP2870 Preliminary 40MHz to 1003MHz 28dB PUSH PULL HYBRID Package: SOT-115J +VB Features   Excellent Linearity INPUT Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability


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    PDF RFPP2870 40MHz 1003MHz RFPP2870 OT-115J 270mA 24VDC

    n3904

    Abstract: 2N3904 die 2N3904 2N3906
    Text: 2N3904 VISHAY NPN SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N 3906


    OCR Scan
    PDF 2N3904 2N3906) MIL-STD-202, 2N3904 100kHz 100nA, 15000Hz 300ns, DS11102 n3904 2N3904 die 2N3906