DS1265 Search Results

16MB SRAM

Abstract: 1024k DS1270W DS1249W DS1265W 36-DIP
Contextual Info: INDUSTRY’S HIGHEST DENSITY 3.3V NONVOLATILE SRAMs Densities up to 16Mb Protect Data for 3.3V Systems The DS1249W, DS1265W, and DS1270W are low-voltage, high-density NV SRAMs designed to preserve critical system data during power loss. Each of these dual in-line encapsulated modules operates on a single 3.3V power supply and employs

Contextual Info: DS1265Y/AB PRELIMINARY DALLAS DS1265Y/AB 8M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNM ENT • 1 0 years minimum data retention in the absence of external power NC É NC • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

Contextual Info: DS1265Y/AB DALLAS DS1265Y/AB 8M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC É NC • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

S1265

Contextual Info: DS1265Y/A8 DALLAS SEMICONDUCTOR DS1265Y/AB 8M Nonvolatile SRAM FEATURES • 10 years minimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC I I A lo 1 • Unlim ited w rite cycles 1 A16 1 1

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265AB-70IND DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1265

Abstract: DS1265AB DS1265Y
Contextual Info: DS1265Y/AB DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 • Low–power CMOS operation A14 5 32 A17 • Read and write access times as fast as 70 ns

Contextual Info: DS1265Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1265Y/AB 8M Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC NC • Datais automatically protected during power loss A18 • Unlimited write cycles

DS1265

Abstract: DS1265W DS1265W-100 DS1265W-100IND
Contextual Info: 19-5617; Rev 11/10 DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

Contextual Info: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1265

Abstract: DS1265W DS1265W-100 DS1265W-150
Contextual Info: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

Contextual Info: 19-5617; Rev 11/10 DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

Contextual Info: 19-5616; Rev 11/10 DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

Contextual Info: Rev: 122002 ERRATA SHEET DS1265W Revision B Errata The errata listed below describe situations where DS1265W revision B modules perform differently than expected or differently than described in the data sheet. Maxim Integrated Products, Inc., intends to correct

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

Contextual Info: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1265

Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
Contextual Info: DS1265Y/AB 8M Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns

DS1265W

Contextual Info: ERRATA SHEET DS1265W 3.3V 8M Nonvolatile SRAM REVISION B ERRATA The errata listed below describe a situation where DS1265W revision B modules may perform differently than expected or differently than described in the data sheet. Dallas Semiconductor/Maxim intends to fix

Contextual Info: DS1265Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc A19 • Data is automatically protected during power loss NC • Unlimited write cycles

DS1265AB-70IND

Abstract: DS1265 DS1265AB DS1265AB-70 DS1265Y DS1265Y-70 DS1265Y-70IND DS12
Contextual Info: 19-5616; Rev 11/10 DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

DS1265

Abstract: DS1265W DS1265W-100 DS1265W-100IND DS1265W-150 DS9034PC DS9034PCI
Contextual Info: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

ds1255

Abstract: DS1255Y
Contextual Info: DS1265 Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1 265Y/ AB 8M Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC 11 A18 I 1

K19 FET

Abstract: plc fire protection DS1265W DS2065W DS2065W-100
Contextual Info: Rev 0; 1/05 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

ST L1117

Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
Contextual Info: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS